scholarly journals Superconductivity Mechanism in the Modulated Quantum Well of YBCO Structure

2014 ◽  
Vol 70 (a1) ◽  
pp. C620-C620
Author(s):  
Tri Nguyen Van

The modulated structure by high pressure and the superconductivity of YBCO compounds have been revealed over two decades [1]. However, their nature & mechanism are not yet sufficiently known. Continuing the achieved results [2-3], the present paper aims to evidence how the Quantum Electron-Magnetic Phenomenon, namely the Super-Exchange Interaction of the "active electrons", i.e. the hybridized odd electrons from the Cu ions in the Cu-Y-Cu nanolayer as a Nanowaveguide (NWG), conditions the Superconductivity of YBCO. The 1st key: The nanostructure is of Quantum nature. The active electrons behavior as the Quasi-Free Electrons (QFEs) waving in the Quantum Well (NWG), where they can be favored to a strong Super-Exchange Interaction. Thereby, two types of the spin coupled pairs can be spontaneously formed in the NWG, where just the singlet pairs will play the role of the superconducting Cooper pairs. For studying these nanoeffects, ESR can offer an especially efficacious contribution. The 2nd key: On the basis of the consequences of the Pauli principle, the singlet pair only persists if its QFE cloud overlapping path length L = nλ/2, where λ is the de Broglie wavelength of QFE conditioned by the Nanodimension of the NWG (Fig.1, left). This electron waving status corresponds to an ideal metallic phase occurring in the NWG. The 3rd key: The spin coupling brings about a temperature depending Spin Gap of the QFEs in the NWG. Just this Spin Gaps causes the superconductivity with the phase transition characteristics (Fig.1, right) that exactly and surprisingly correspond with the experimental.

Author(s):  
C. Hayzelden ◽  
J. L. Batstone

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.


2020 ◽  
Author(s):  
Marc Philipp Bahlke ◽  
Natnael Mogos ◽  
Jonny Proppe ◽  
Carmen Herrmann

Heisenberg exchange spin coupling between metal centers is essential for describing and understanding the electronic structure of many molecular catalysts, metalloenzymes, and molecular magnets for potential application in information technology. We explore the machine-learnability of exchange spin coupling, which has not been studied yet. We employ Gaussian process regression since it can potentially deal with small training sets (as likely associated with the rather complex molecular structures required for exploring spin coupling) and since it provides uncertainty estimates (“error bars”) along with predicted values. We compare a range of descriptors and kernels for 257 small dicopper complexes and find that a simple descriptor based on chemical intuition, consisting only of copper-bridge angles and copper-copper distances, clearly outperforms several more sophisticated descriptors when it comes to extrapolating towards larger experimentally relevant complexes. Exchange spin coupling is similarly easy to learn as the polarizability, while learning dipole moments is much harder. The strength of the sophisticated descriptors lies in their ability to linearize structure-property relationships, to the point that a simple linear ridge regression performs just as well as the kernel-based machine-learning model for our small dicopper data set. The superior extrapolation performance of the simple descriptor is unique to exchange spin coupling, reinforcing the crucial role of choosing a suitable descriptor, and highlighting the interesting question of the role of chemical intuition vs. systematic or automated selection of features for machine learning in chemistry and material science.


1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.


2016 ◽  
Vol 94 (24) ◽  
Author(s):  
Cong Son Ho ◽  
Seng Ghee Tan ◽  
Mansoor B. A. Jalil ◽  
Zilong Chen ◽  
Leonid A. Krivitsky

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.


1994 ◽  
Vol 50 (8) ◽  
pp. 5787-5790 ◽  
Author(s):  
J. Ding ◽  
M. Hagerott ◽  
P. Kelkar ◽  
A. V. Nurmikko ◽  
D. C. Grillo ◽  
...  

2020 ◽  
Author(s):  
Angel Martín Pendás ◽  
Evelio Francisco

<p>We now show that Clark and Davidson local spins operators are perfectly defined subsystem operators if a fragment is taken as an <i>open quantum system</i> (OQS). Open systems have become essential in quantum control and quantum computation, but have not received much attention in Chemistry. We have already shown (<i>J. Chem. Theory Comput</i>. <b>2018</b>, <i>15</i>, 1079) how real space OQSs can be defined in molecular systems and how they offer new insights relating quantum mechanical entaglement and chemical bonding. The OQS account of local spin that we offer yields a rigorous, yet easily accessible way to rationalize local spin values. A fragment is found in a mixed state direct sum of sectors characterized by different number of electrons that occur with different probabilities. The local spin is then a weighted sum of otherwise standard <i>S</i>(<i>S</i>+1) values. With OQS glasses, it is obvious that atomic or fragment spins should not vanish. Our approach thus casts doubts on any procedure used to annihilate them, like those used by Mayer and coworkers. OQS local spins allow for a fruitful use of models. One can propose easily sector probabilities for localized, covalent, ionic, zwitterionic, etc. situations, and examine their ideal local spins. We have mapped all 2c-2e cases, and shown how to do that in general multielectron cases. The role of electron correlation is also studied by tuning the Hubbard U/t parameter for H chains. Correlation induced localization changes the spin-coupling patterns even qualitatively, and show how the limiting antiferromagnet arises.</p>


2009 ◽  
Vol 81 (1) ◽  
pp. 015701 ◽  
Author(s):  
F M Hashimzade ◽  
Kh A Hasanov ◽  
B H Mehdiyev ◽  
S Cakmak

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