Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

2019 ◽  
Vol 36 (3) ◽  
pp. 104-108
Author(s):  
Wojciech Filipowski
Keyword(s):  
Solar Cell ◽  
Diffusion Process ◽  
Dopant Concentration ◽  
Phosphorus Concentration ◽  
Concentration Profiles ◽  
Content Type ◽  
Phosphorus Diffusion ◽  
Emitter Layer ◽  
Real Concentration ◽  
High Dopant Concentration

Purpose The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. Design/methodology/approach To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration profiles of these samples became template profiles for the model in development. Findings The model was developed based on phenomena described in the literature, such as the influence of the electric field of dopant ionized atoms and the influence of dopant atom concentration nearing the maximum concentration on the value of diffusion coefficient. It was proposed to divide the diffusion area into low and high dopant concentration region. Originality/value A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration profile developed theoretically and the real profile measured using the SIMS method. A coefficient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.

Dopant concentration profiles in conducting poly(p-phenylenevinylene) by Rutherford backscattering spectrometry

1990 ◽  
Vol 23 (15) ◽  
pp. 3675-3682 ◽  
Author(s):  
Michael A. Masse ◽  
Russell J. Composto ◽  
Richard A. L. Jones ◽  
Frank E. Karasz
Keyword(s):  
Dopant Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Concentration Profiles

Depth profile analysis of solar cell silicon by GD-MS

2014 ◽  
Vol 29 (11) ◽  
pp. 2072-2077 ◽  
Author(s):  
M. Di Sabatino ◽  
C. Modanese ◽  
L. Arnberg
Keyword(s):  
Solar Cell ◽  
Depth Profile ◽  
Profile Analysis ◽  
Depth Resolution ◽  
Impurity Distribution ◽  
Concentration Profiles ◽  
Good Sensitivity ◽  
Transition Elements ◽  
Depth Profile Analysis

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

Spectral quasi-linearization method for Casson fluid with homogeneous heterogeneous reaction in presence of nonlinear thermal radiation over an exponential stretching sheet

2019 ◽  
Vol 15 (2) ◽  
pp. 398-417 ◽  
Author(s):  
Subrata Das ◽  
Hiranmoy Mondal ◽  
Prabir Kumar Kundu ◽  
Precious Sibanda
Keyword(s):  
Entropy Generation ◽  
Stretching Sheet ◽  
Heterogeneous Reaction ◽  
Casson Fluid ◽  
Linearization Method ◽  
Concentration Profiles ◽  
Brinkman Number ◽  
Content Type ◽  
Exponential Stretching ◽  
Exponential Stretching Sheet

PurposeThe focus of the paper is only on the contributions toward the use of entropy generation of non-Newtonian Casson fluid over an exponential stretching sheet. The purpose of this paper is to investigate the entropy generation and homogeneous–heterogeneous reaction. Velocity and thermal slips are considered instead of no-slip conditions at the boundary.Design/methodology/approachBasic equations in form of partial differential equations are converted into a system of ordinary differential equations and then solved using the spectral quasi-linearization method (SQLM).FindingsThe validity of the model is established using error analysis. Variation of the velocity, temperature, concentration profiles and entropy generation against some of the governing parameters are presented graphically. It is to be noted that the increase in entropy generation due to increase in heterogeneous reaction parameter is due to the increase in heat transfer irreversibility. It is further noted that the Bejan number decreases with Brinkman number because increase in Brinkman number reduces the total entropy generation.Originality/valueThis paper acquires realistic numerical explanations for rapidly convergent temperature and concentration profiles using the SQLM. Convergence of the numerical solutions was monitored using the residual error of the PDEs. The resulting equations are then integrated using the SQLM. The influence of emergent flow, heat and mass transfer parameters effects are shown graphically.

Use of the Orthogonal Projection Approach (OPA) to Monitor Batch Processes

2003 ◽  
Vol 57 (1) ◽  
pp. 80-87 ◽  
Author(s):  
S. Gourvénec ◽  
C. Lamotte ◽  
P. Pestiaux ◽  
D. L. Massart
Keyword(s):  
Orthogonal Projection ◽  
Spectroscopic Data ◽  
Batch Processes ◽  
Multivariate Curve Resolution ◽  
Concentration Profiles ◽  
Curve Resolution ◽  
On Line ◽  
Real Concentration ◽  
Projection Approach

The orthogonal projection approach (OPA) and multivariate curve resolution (MCR) are presented as a way to monitor batch processes using spectroscopic data. Curve resolution allows one to look within a batch and predict on-line real concentration profiles of the different species appearing during reactions. Taking into account the variations of the process by using an augmented matrix of complete batches, the procedure explained here calculates some prediction coefficients that can afterwards be applied for a new batch.

Simulation of a Silicon Heterojunction Solar Cell with a Gradient Doping Emitter Layer

2019 ◽  
Vol 48 (7) ◽  
pp. 4688-4696 ◽  
Author(s):  
Licheng Hao ◽  
Ming Zhang ◽  
Ming Ni ◽  
Xianglong Shen ◽  
Xiaodong Feng
Keyword(s):  
Solar Cell ◽  
Heterojunction Solar Cell ◽  
Emitter Layer ◽  
Silicon Heterojunction Solar Cell

Photovoltaic effect in single-junction organic solar cell fabricated using vanadyl phthalocyanine soluble derivative

2015 ◽  
Vol 44 (1) ◽  
pp. 26-32 ◽  
Author(s):  
F. Aziz ◽  
Z. Ahmad ◽  
S.M. Abdullah ◽  
K. Sulaiman ◽  
M.H. Sayyad
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Spin Coating ◽  
Organic Solar Cell ◽  
Photovoltaic Effect ◽  
Content Type ◽  
Single Junction ◽  
Coating Technique ◽  
Phthalocyanine Derivative

Purpose – The purpose of this paper is to study the optical and electrical characteristics of a single-junction solar cell based on a green-colour dye vanadyl 2,9,16, 23-tetraphenoxy-29H, 31H-phthalocyanine (VOPcPhO). The use of soluble vanadyl phthalocyanine derivative makes it very attractive for photovoltaic applications due to its tunable properties and high solubility. Design/methodology/approach – A photoactive layer of VOPcPhO has been sandwiched between indium tin oxide (ITO) and aluminium (Al) electrodes to produce a ITO/PEDOT:PSS/VOPcPhO/Al photovoltaic device. The VOPcPhO thin film is deposited by a simple spin coating technique. To obtain the optimal thickness for the solar cell device, different thicknesses of the photoactive layer, achieved by manipulating the spin rate, have been investigated. Findings – The device exhibited photovoltaic effect with the values of Jsc, Voc and FF equal to 5.26 × 10-6 A/cm2, 0.621 V and 0.33, respectively. The electronic parameters of the cell have been obtained from the analysis of current-voltage characteristics measured in dark. The values of ideality factor and barrier height were found to be 2.69 and 0.416 eV, respectively. The optical examination showed that the material is sensitive to light in the UV region between 270 nm and 410 nm, as well as in the visible spectrum within the range of 630 nm and 750 nm. Research limitations/implications – The solar cell based on a single layer of vanadyl phthalocyanine derivative results in low efficiency, which can be enhanced by introducing a variety of donor materials to form bulk heterojunction solar cells. Practical implications – The spin coating technique provides a simple, less expensive and effective approach for preparing thin films. Originality/value – A novel thin-film, single-junction organic solar cell, fabricated by using VOPcPhO, has been investigated for the first time ever. The vanadyl phthalocyanine derivative together with a donor material will have potential application for improved efficiency of the solar cells.

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