Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing

2018 ◽  
Author(s):  
Kazuhiko Fuse ◽  
Hideaki Tanimura ◽  
Takayuki Aoyama ◽  
Shinichi Kato ◽  
Yoshihide Nozaki ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Sol Gel ◽  
Flash Lamp ◽  
High Dopant Concentration

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

scholarly journals Influence of Ce Doping on the Electrical and Optical Properties of TiO2and Its Photocatalytic Activity for the Degradation of Remazol Brilliant Blue R

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Aisha Malik ◽  
S. Hameed ◽  
M. J. Siddiqui ◽  
M. M. Haque ◽  
M. Muneer
Keyword(s):  
Electron Microscopy ◽  
Photocatalytic Activity ◽  
Dopant Concentration ◽  
Atmospheric Oxygen ◽  
Sol Gel ◽  
Analytical Techniques ◽  
Xrd Analysis ◽  
Brilliant Blue ◽  
Tem Analysis ◽  
Remazol Brilliant Blue R

Nanocrystalline TiO2particles doped with different concentrations of Cerium (Ce, 1–10%) have been synthesized using sol-gel method. The prepared particles were characterized by standard analytical techniques such as X-ray diffraction (XRD), FTIR and Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM). The XRD analysis shows no change in crystal structure of TiO2after doping with different concentrations of Ce, which indicates the single-phase polycrystalline material. The SEM analysis shows the partial crystalline nature of undoped, and doped TiO2and TEM analysis shows the particle sizes were in the range of 9–14 nm in size. The a.c. analysis shows that the dielectric constantεand dielectric loss tanδdecrease with the increase in frequency. The dielectric property decreases with the increase in dopant concentration. It is also observed that the impedance increases with an increase in dopant concentration. The photocatalytic activity of the synthesized particles (Ce-doped TiO2) with dopant concentration of 9% (Ce) showed the highest photocatalytic activity for the degradation of the dye derivative Remazol Brilliant Blue R in an immersion well photochemical reactor with 500 W halogen linear lamp in the presence of atmospheric oxygen.

scholarly journals Cr doped ZnO nanostructures: synthesis, electronic structures, and magnetic properties

2017 ◽  
Vol 95 (11) ◽  
pp. 1225-1232 ◽  
Author(s):  
Michael W. Murphy ◽  
William R. Diebel ◽  
Yun-Mui Yiu ◽  
Tsun-Kong Sham
Keyword(s):  
Dopant Concentration ◽  
Magnetic Measurements ◽  
Tetrahedral Site ◽  
Sol Gel ◽  
Secondary Phase ◽  
Processing Temperature ◽  
X Ray ◽  
Zno Nanostructure ◽  
Cr Concentration ◽  
X Ray Absorption

In this experiment, we have attempted to dope Cr into ZnO nanostructure as a function of dopant concentration using sol-gel method, followed by controlled thermal annealing with some success. We have also examined the samples thus prepared with scanning electron microscopy (SEM), X-ray powder diffraction (XRD), near edge X-ray absorption fine structure (NEXAFS), both theoretical and experimental, and magnetic measurements. We found that low concentration of Cr can indeed be doped in ZnO and is substitutional, occupying the tetrahedral site. However, upon increasing dopant concentration and annealing temperature, a secondary phase with Cr occupying an octahedral site precipitates out, which was evident from SEM, XRD, and NEXAFS. Ferromagnetism at room temperature was not observed in any samples, although at low Cr concentration and 400 °C processing temperature, antiferromagnetism can be seen; however, at higher concentrations or processing temperatures, the samples show only paramagnetism.

scholarly journals The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration

2018 ◽  
Vol 53 ◽  
pp. 135-140 ◽  
Author(s):  
Julie Euvrard ◽  
Amélie Revaux ◽  
Pierre-Alain Bayle ◽  
Michel Bardet ◽  
Dominique Vuillaume ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
High Dopant Concentration

Improvement in the Performance of Sol–Gel Processed In2O3Thin-Film Transistor Depending on Sb Dopant Concentration

2017 ◽  
Vol 38 (8) ◽  
pp. 1027-1030 ◽  
Author(s):  
Taegyun Kim ◽  
Bongho Jang ◽  
Jin-Hyuk Bae ◽  
Hongsik Park ◽  
Chan Seob Cho ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Sol Gel

scholarly journals PENGARUH PENAMBAHAN CO-DOPING Mg/La TERHADAP KARAKTERISASI TiO2 SEBAGAI FOTOELEKTRODA

2021 ◽  
Vol 9 (1) ◽  
pp. 79-86
Author(s):  
Mursal Mursal ◽  
◽  
Nurul Azmi ◽  
Ismail Ismail ◽  
◽  
...  
Keyword(s):  
Doping Concentration ◽  
Crystal Size ◽  
Energy Gap ◽  
Dopant Concentration ◽  
Sol Gel ◽  
Pure Tio2 ◽  
Tio2 Sample ◽  
Doped Tio2 ◽  
Co Doping ◽  
Co Doped

The effect of Mg/La co-doping addition on the caracteristics of TiO2 as photoelectrode have been studied. This study aims to investigate the effect of Mg/La co-doping concentration on the characteristics of TiO2. This study aims investigate the effect of Mg/La co-doping concentration on the characteristics of TiO2. Mg/La was varied from 0% mol, 0.4 / 0.6% mol, and 0.6 / 0.4% mol. Synthesis of TiO2 co-doping Mg/La was done by sol gel method. The resulting of powder pure TiO2 and co-doping Mg/La was made to paste, and was deposited on a glass substrate with a size of 2.5 x 2.5 cm and sintered at 600°C for 1 hour. Mg / La co-doped TiO2 layers were characterized using XRD, UV-Vis, and FTIR spectrometers. The results showed that TiO2 was the mos dominan phase appeared in pure TiO2 sample. The phase of MgO, MgTiO3, Mg2TiO4, and La2O3 were found in Mg/La co-doped TiO2 samples. The crystal size of Mg/La co-doped TiO2 was varied from 8.85 to 7.70 nm. In this research, we obtained that the energy gap was varied from 3.52 to 3.5 eV depent on co-dopant concentration. FTIR measurement showed groups of Ti-O, Ti-O-Ti, Ti-O-O, and H-O.

Fabrication and characterization of Yb-doped Y2O3 powders and thin films

2020 ◽  
Vol 111 (7) ◽  
pp. 559-566
Author(s):  
Elif Emil Kaya ◽  
Fatma Ünal ◽  
Kürşat Kazmanlıa ◽  
Sebahattin Gürmena
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Dopant Concentration ◽  
Sol Gel ◽  
Lattice Parameter ◽  
Electron Beam Evaporation ◽  
Glass Substrates ◽  
Corning Glass ◽  
Peak Broadening ◽  
Evaporation Technique

Abstract Yttrium oxide (Y2O3) and ytterbium (Yb)-doped Y2O3 particles were synthesized via the sol-gel method from the aqueous solution of their nitrate salts. The synthesized powders were then deposited on Corning glass substrates using an electron beam evaporation technique to examine the growth morphology of the thin films. The effect of the Yb dopant concentration on the microstructure and morphology of the Y2O3 powders and thin films was investigated using various characterization techniques. The synthesized powders and fabricated thin films have body-centered cubic structures with space group Ia-3. Based on the X-ray peak broadening, crystallite size and lattice parameters were evaluated with the Williamsom-Hall and Cohen-Wagner methods. The lattice parameter and crystallite size decrease with increasing Yb concentration. The intensities of the Raman peaks decrease due to microstructural disorder caused by the increase in the Yb dopant concentration. The band gap values of the powders also decrease depending on the dopant concentration, similar to the lattice parameter and crystallite size. While the synthesized powders have a sponge-like morphology, they exhibit different morphological structures depending on the dopant concentration when converted into thin films.

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

2019 ◽  
Vol 36 (3) ◽  
pp. 104-108
Author(s):  
Wojciech Filipowski
Keyword(s):  
Solar Cell ◽  
Diffusion Process ◽  
Dopant Concentration ◽  
Phosphorus Concentration ◽  
Concentration Profiles ◽  
Content Type ◽  
Phosphorus Diffusion ◽  
Emitter Layer ◽  
Real Concentration ◽  
High Dopant Concentration

Purpose The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. Design/methodology/approach To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration profiles of these samples became template profiles for the model in development. Findings The model was developed based on phenomena described in the literature, such as the influence of the electric field of dopant ionized atoms and the influence of dopant atom concentration nearing the maximum concentration on the value of diffusion coefficient. It was proposed to divide the diffusion area into low and high dopant concentration region. Originality/value A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration profile developed theoretically and the real profile measured using the SIMS method. A coefficient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.

Sign in / Sign up

Export Citation Format

Share Document