Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽

10.1021/acsomega.1c00841 ◽

2021 ◽

Author(s):

Muhammad Aniq Shazni Mohammad Haniff ◽

Nur Hamizah Zainal Ariffin ◽

Poh Choon Ooi ◽

Mohd Farhanulhakim Mohd Razip Wee ◽

Mohd Ambri Mohamed ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bilayer Graphene ◽

Cold Wall ◽

Polycrystalline Nickel ◽

Large Area ◽

Temperature Growth ◽

Low Temperature Growth

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Large-area and low-cost Cu–Cu bonding with cold spray deposition, oxidation, and reduction processes under low-temperature conditions

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-06556-4 ◽

2021 ◽

Author(s):

Juncai Hou ◽

Qiumei Zhang ◽

Siliang He ◽

Jingru Bian ◽

Jinting Jiu ◽

...

Keyword(s):

Low Temperature ◽

Cold Spray ◽

Spray Deposition ◽

Low Cost ◽

Large Area ◽

Reduction Processes ◽

Temperature Conditions ◽

Cu Bonding

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All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

Applied Sciences ◽

10.3390/app10196656 ◽

2020 ◽

Vol 10 (19) ◽

pp. 6656

Author(s):

Stefano Lai ◽

Giulia Casula ◽

Pier Carlo Ricci ◽

Piero Cosseddu ◽

Annalisa Bonfiglio

Keyword(s):

Field Effect ◽

Low Voltage ◽

Field Effect Transistors ◽

High Mobility ◽

Chemical Vapor ◽

Cost Effective ◽

Large Area ◽

Parylene C ◽

Biomedical Sensing ◽

Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽

10.1021/nn202012m ◽

2011 ◽

Vol 5 (9) ◽

pp. 7198-7204 ◽

Cited By ~ 82

Author(s):

Michael E. Ramón ◽

Aparna Gupta ◽

Chris Corbet ◽

Domingo A. Ferrer ◽

Hema C. P. Movva ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Mobility ◽

Chemical Vapor ◽

Large Area ◽

Cobalt Thin Films ◽

Cmos Compatible

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Photo-induced Large Area Growth Of Dielectrics With Excimer Lamps

MRS Proceedings ◽

10.1557/proc-617-j4.4 ◽

2000 ◽

Vol 617 ◽

Cited By ~ 6

Author(s):

Ian W. Boyd ◽

Jun-Ying Zhang

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Low Temperature ◽

Leakage Current ◽

Sol Gel ◽

Low Dielectric Constant ◽

Large Area ◽

Excimer Lamp ◽

Low Dielectric ◽

Current Densities

AbstractIn this paper, UV-induced large area growth of high dielectric constant (Ta2O5, TiO2and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing using excimer lamps, as well as the effect of low temperature LW annealing, are discussed. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), UV spectrophotometry, atomic force microscope (AFM), capacitance-voltage (C-V) and current-voltage (I-V) measurements have been employed to characterize oxide films grown and indicate them to be high quality layers. Leakage current densities as low as 9.0×10−8 Acm−2 and 1.95×10−7 Acm−2 at 0.5 MV/cm have been obtained for the as-grown Ta2O5 films formed by photo-induced sol-gel processing and photo-CVD. respectively - several orders of magnitude lower than for any other as-grown films prepared by any other technique. A subsequent low temperature (400°C) UV annealing step improves these to 2.0×10−9 Acm−2 and 6.4× 10−9 Acm−2, respectively. These values are essentially identical to those only previously formed for films annealed at temperatures between 600 and 1000°C. PZT thin films have also been deposited at low temperatures by photo-assisted decomposition of a PZT metal-organic sol-gel polymer using the 172 nm excimer lamp. Very low leakage current densities (10−7 A/cm2) can be achieved, which compared with layers grown by conventional thermal processing. Photo-induced deposition of low dielectric constant organic polymers for interlayer dielectrics has highlighted a significant role of photo effects on the curing of polyamic acid films. I-V measurements showed the leakage current density of the irradiated polymer films was over an order of magnitude smaller than has been obtained in the films prepared by thermal processing. Compared with conventional furnace processing, the photo-induced curing of the polyimide provided both reduced processing time and temperature, A new technique of low temperature photo-induced sol-gel process for the growth of low dielectric constant porous silicon dioxide thin films from TEOS sol-gel solutions with a 172 nm excimer lamp has also been successfully demonstrated. The dielectric constant values as low as 1.7 can be achieved at room temperature. The applications investigated so far clearly demonstrate that low cost high power excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing.

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