Large-area and low-cost Cu–Cu bonding with cold spray deposition, oxidation, and reduction processes under low-temperature conditions

ABSTRACTPrintable devices have been attracting considerable interest because of their application to flexible large-area devices in low cost printable electronics. In order to fabricate such devices, it is necessary to discover a passivation film and develop an efficient process for its preparation. We have previously reported that silicone oxide film is obtained with high density by UV irradiation to silazane compound film at low temperature [1]. The silicon oxide film has electric resistivity more than 10−15 Ωcm and electric strength more than 7 MV/cm. In order to apply the film to passivation layer in printable device, in this paper, preparation of nano-composite film with silicon oxide and clay mineral was investigated.

Download Full-text

Theoretical Uniformity Analysis and Improvement of Spray Deposition by Mixing Nozzles with Heating Conditions

Coatings ◽

10.3390/coatings10010081 ◽

2020 ◽

Vol 10 (1) ◽

pp. 81

Author(s):

Xuran Dong ◽

Xiaolong Pan ◽

Xianxian Gao ◽

Haisheng Fang

Keyword(s):

High Speed ◽

Heating Temperature ◽

Spray Deposition ◽

Low Cost ◽

Spray Coating ◽

Deposition Process ◽

Test Method ◽

Large Area ◽

Orthogonal Test Method ◽

Experimental Trials

Spray coating is widely used in the manufacture of deposited layers of electronic devices due to its unique advantages of high-speed deposition over a large area. To improve the spray deposition process for further low-cost and uniform production, the uniformity of the spray deposition should be systematically investigated. The current study, however, mainly focuses on the experimental trials with few numerical directions especially for the mixing nozzle sprayers with heating conditions. In the paper, we conduct a theoretical study on the uniformity of the internal and external mixing nozzles. The influencing factors include the initial angle, the total ink flow rate, the transporting gas velocity and the distance from the nozzle to the substrate. Then, the orthogonal test method is adopted to obtain the optimal combination of the parameters. Finally, the effects of different heating modes on the uniformity have been further studied. The results show that these factors influence the uniformity with the two types of nozzles to a different degree. The evaporation of the atomized droplets can effectively improve the uniformity in a certain temperature range. The heating temperature with the highest uniformity is various depending on the heating modes, which should be carefully addressed during the actual production.

Download Full-text

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Micromachines ◽

10.3390/mi11090799 ◽

2020 ◽

Vol 11 (9) ◽

pp. 799 ◽

Cited By ~ 1

Author(s):

Mariana Fraga ◽

Rodrigo Pessoa

Keyword(s):

Low Temperature ◽

Low Cost ◽

Chemical Vapor ◽

Atomic Layer ◽

Nanoelectromechanical Systems ◽

Large Area ◽

Scientific Publications ◽

Continuous Growth ◽

Layer Deposition ◽

Sic Films

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

Download Full-text

Investigation of Pinewood Nematodes in Pinus tabuliformis Carr. under Low-Temperature Conditions in Fushun, China

Forests ◽

10.3390/f11090993 ◽

2020 ◽

Vol 11 (9) ◽

pp. 993

Author(s):

Long Pan ◽

Rong Cui ◽

Yongxia Li ◽

Yuqian Feng ◽

Xingyao Zhang

Keyword(s):

Low Temperature ◽

Population Characteristics ◽

Pinewood Nematode ◽

Large Area ◽

Temperature Conditions ◽

Pinus Tabuliformis ◽

Epidemic Area ◽

Environment Temperature ◽

Third Stage ◽

Pinewood Nematodes

In recent years, the pinewood nematode has continuously adapted to low-temperature environments and expanded from the South to the North of China. In December 2018, a large area of pinewood nematode was suspected to be harmful to Pinus tabuliformis under natural conditions in Fushun City, Liaoning Province. In order to clarify the low-temperature environment and population characteristics of pinewood nematodes in this new epidemic area, we analyzed the difference in temperature between the inside and outside of P. tabuliformis in low-temperature environments, conducted the morphological and molecular identification of pinewood nematodes in P. tabuliformis, summarized the distribution characteristics of the wintering of pinewood nematodes and explored the population structure of pinewood nematodes under different low-temperature conditions. The results indicated that the diurnal variation of temperature in dead P. tabuliformis was significantly less than the environment temperature. The lowest temperature in P. tabuliformis was 3.2 °C higher than the lowest temperature in the environment in one day; the pathogen of a large area of dead P. tabuliformis in Fushun was pinewood nematode (Bursaphelenchus xylophilus); 84.9% of the average populations of pinewood nematodes were third-stage dispersal juveniles, which mainly gathered in 5 cm within the pupal chamber of Monochamus saltuarius Gebler. At −40 ℃, most of the third-stage dispersal juveniles of pinewood nematode in dead pine can still survive. Our study laid a foundation for the understanding of the low-temperature adaptation mechanism of pinewood nematode and contributed to the monitoring of pine wilt disease in the mid-temperate zone.

Download Full-text

A New Low-Cost and Low-Temperature Chemical Passivation Process for Large Area Industrial Single Crystalline Silicon Wafers

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2017.8366672 ◽

2017 ◽

Cited By ~ 2

Author(s):

Tarun S. Yadav ◽

K. Sandeep ◽

Ashok K. Sharma ◽

B. Spandana ◽

K.L. Narasimhan ◽

...

Keyword(s):

Low Temperature ◽

Crystalline Silicon ◽

Low Cost ◽

Silicon Wafers ◽

Single Crystalline Silicon ◽

Large Area ◽

Single Crystalline ◽

Passivation Process ◽

Chemical Passivation

Download Full-text

Dye-Sensitized Solar Cells Built on Plastic Substrates by Low-Temperature Preparation of Semiconductor Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.451.1 ◽

2010 ◽

Vol 451 ◽

pp. 1-19 ◽

Cited By ~ 6

Author(s):

Tsutomu Miyasaka

Keyword(s):

Solar Cells ◽

Low Temperature ◽

Low Cost ◽

Dye Sensitized Solar Cells ◽

Semiconductor Films ◽

Large Area ◽

Plastic Substrates ◽

Dye Sensitized ◽

Low Temperature Preparation ◽

Plastic Solar Cells

Printable materials and technologies to realize low-cost dye-sensitized solar cell fabricated on thin plastic substrates are reviewed. Mesoscopic conductive materials and pastes that enable low-temperature coating of electrochemically active films for photoanode and conterelectrode are described in aspects of material preparation, electrochemical and photovoltaic behavior, and stability of the plastic electrode. Performance of plastic solar cells and modules are discussed with respects to the structure and thickness of the non-sintered mesoporous films, light-harvesting functions of dyes, and optimization of electrolyte compositions. Commercial advantages of the lightweight, flexible cell in power generation are also introduced based on proof-of-concept tests with large-area modules.

Download Full-text

High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

MRS Proceedings ◽

10.1557/proc-685-d3.4.1 ◽

2001 ◽

Vol 685 ◽

Author(s):

T.C. Leung ◽

C.F. Cheng ◽

M.C. Poon

Keyword(s):

Low Temperature ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

High Performance ◽

Low Cost ◽

Drain Current ◽

Large Area ◽

High Quality ◽

Lateral Crystallization ◽

Si Films

AbstractNickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

Download Full-text