Thermal characterisation of threshold voltage and short channel effect of thin film SOI MOSFET

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

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Suppression of short channel effect in organic thin film transistors

Applied Physics Letters ◽

10.1063/1.2785118 ◽

2007 ◽

Vol 91 (11) ◽

pp. 113508 ◽

Cited By ~ 46

Author(s):

K. Tukagoshi ◽

F. Fujimori ◽

T. Minari ◽

T. Miyadera ◽

T. Hamano ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Capacitance Network Model of the Short Channel Effect for0.1 µmFully Depleted SOI MOSFET

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.996 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 996-1000 ◽

Cited By ~ 9

Author(s):

Risho Koh ◽

Haruo Kato ◽

Hiroshi Matsumoto

Keyword(s):

Network Model ◽

Short Channel ◽

Short Channel Effect ◽

Soi Mosfet ◽

Channel Effect

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Analytical Drain Current Model of UTBB SOI MOSFET with lateral dual gates to Suppress Short Channel Effect

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783327 ◽

2019 ◽

Cited By ~ 1

Author(s):

Arighna Basak ◽

Angsuman Sarkar

Keyword(s):

Current Model ◽

Drain Current ◽

Short Channel ◽

Short Channel Effect ◽

Soi Mosfet ◽

Channel Effect

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Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

MRS Proceedings ◽

10.1557/proc-568-213 ◽

1999 ◽

Vol 568 ◽

Cited By ~ 1

Author(s):

M.E. Rubin ◽

S. Saha ◽

J. Lutze ◽

F. Nouri ◽

G. Scott ◽

...

Keyword(s):

Threshold Voltage ◽

Recombination Rate ◽

Gate Oxide ◽

Two Dimensional ◽

Short Channel ◽

Short Channel Effect ◽

Mos Capacitor ◽

Enhanced Diffusion ◽

Channel Effect ◽

Additional Nitrogen

ABSTRACTExperiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.

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