Analytical Drain Current Model of UTBB SOI MOSFET with lateral dual gates to Suppress Short Channel Effect

We have investigated the static variability of p-MOSFETs by evaluating the drain current under various conditions of gate and drain voltages. The value of drain current variability (σId/Id) is proportional to (LW)-1/2 before the short channel effect appears, being similar to that of Vt variability. The magnitude of σId/Id decreases as the gate overdrive (Vg-Vt) decreases, and it is classified into two regimes that correspond to the carrier conduction mechanisms, namely diffusion and drift transports. This result strongly suggests that the dominant factors for determining σId/Id values are related to the carrier conduction mechanisms.

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Modeling on the Channel-To-S/D Capacitance and the Short Channel Effect for 0.1μm Fully Depleted SOI-MOSFET

10.7567/ssdm.1995.pc-10-9 ◽

1995 ◽

Author(s):

Risho Koh ◽

Haruo Kato ◽

Hiroshi Matsumoto

Keyword(s):

Short Channel ◽

Short Channel Effect ◽

Fully Depleted ◽

Soi Mosfet ◽

Channel Effect

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Thermal characterisation of threshold voltage and short channel effect of thin film SOI MOSFET

1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473) ◽

10.1109/apmc.1999.829909 ◽

2003 ◽

Author(s):

V. Aggarwal ◽

R.S. Gupta

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Short Channel ◽

Short Channel Effect ◽

Soi Mosfet ◽

Channel Effect

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PERFORMANCE COMPARISON OF BULK FINFET WITH SOI FINFET IN NANO-SCALE REGIME

International Journal of Electronics Signals and Systems ◽

10.47893/ijess.2013.1148 ◽

2013 ◽

pp. 104-107

Author(s):

SUMANLATA TRIPATHI ◽

RAMANUJ MISHRA ◽

SANDEEP MISHRA ◽

VIRENDRA PRATAP YADAV ◽

R.A. MISHRA

Keyword(s):

Performance Improvement ◽

Performance Comparison ◽

Doping Profile ◽

Subthreshold Slope ◽

Short Channel ◽

Short Channel Effect ◽

Soi Mosfet ◽

Channel Effect ◽

Simulation Results ◽

The Ideal

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also compares the performance improvement of Multi-gate Bulk and SOI MOSFET over Single-gate bulk and SOI MOSFET.The simulation results are obtained with the help of TCAD 3-D device simulator are well matched with the ideal characteristics.

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Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0106 ◽

2012 ◽

Author(s):

Yuk L. Tsang ◽

Xiang D. Wang ◽

Reyhan Ricklefs ◽

Jason Goertz

Keyword(s):

Threshold Voltage ◽

Electrical Characterization ◽

Cmos Technology ◽

Short Channel ◽

Visual Defect ◽

Subthreshold Region ◽

Short Channel Effect ◽

Channel Effect ◽

Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

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