Capacitance Network Model of the Short Channel Effect for0.1 µmFully Depleted SOI MOSFET

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 996-1000 ◽  
Author(s):  
Risho Koh ◽  
Haruo Kato ◽  
Hiroshi Matsumoto
Keyword(s):  
Network Model ◽  
Short Channel ◽  
Short Channel Effect ◽  
Soi Mosfet ◽  
Channel Effect

scholarly journals PERFORMANCE COMPARISON OF BULK FINFET WITH SOI FINFET IN NANO-SCALE REGIME

2013 ◽  
pp. 104-107
Author(s):  
SUMANLATA TRIPATHI ◽  
RAMANUJ MISHRA ◽  
SANDEEP MISHRA ◽  
VIRENDRA PRATAP YADAV ◽  
R.A. MISHRA
Keyword(s):  
Performance Improvement ◽  
Performance Comparison ◽  
Doping Profile ◽  
Subthreshold Slope ◽  
Short Channel ◽  
Short Channel Effect ◽  
Soi Mosfet ◽  
Channel Effect ◽  
Simulation Results ◽  
The Ideal

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also compares the performance improvement of Multi-gate Bulk and SOI MOSFET over Single-gate bulk and SOI MOSFET.The simulation results are obtained with the help of TCAD 3-D device simulator are well matched with the ideal characteristics.

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket

2015 ◽  
Vol 36 (7) ◽  
pp. 648-650 ◽  
Author(s):  
Miao Xu ◽  
Huilong Zhu ◽  
Lichuan Zhao ◽  
Huaxiang Yin ◽  
Jian Zhong ◽  
...  
Keyword(s):  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

Suppression of short channel effect in organic thin film transistors

2007 ◽  
Vol 91 (11) ◽  
pp. 113508 ◽  
Author(s):  
K. Tukagoshi ◽  
F. Fujimori ◽  
T. Minari ◽  
T. Miyadera ◽  
T. Hamano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect
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