Case studies of fault isolation for the global failing patterns on SRAM bitmap caused by the defects in peripheral logic regions

Author(s):  
Jianhua Yin ◽  
Jian Yu ◽  
Sheng Xie ◽  
Dapeng Sun ◽  
Yong Ern Ling ◽  
...  
Keyword(s):  
Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Jeffery Huynh ◽  
Joseph Tan ◽  
Meng-Yeow Tay ◽  
...  

Abstract This paper describes the application of lock-in thermography (LIT) for flip-chip package-level failure analysis. LIT successfully detected and localized short failures related to both die/C4 bumps and package defects inside the organic substrate. The detail sample preparation to create short defects at different layers, LIT fault isolation methodology, and case studies performed with LIT are also presented in this paper.


Author(s):  
Varun Gupta ◽  
Wee Yee Wendy Lau ◽  
S.H. Goh ◽  
H.W. Ho ◽  
B.L. Yeoh ◽  
...  

Abstract In a failure event, circuit schematic analysis usually follows after fault isolation to increase the success rate. However, analyzing an extracted netlist of the isolated sub-circuit can be messy. Manual circuit translation from layout where the analyst is in control of the cell instance placement is one way to overcome this challenge. Although it is neater and intuitive for analysis, it can be time consuming to create the schematic. To analyze circuits in a systematic manner, cross-mapping between layout and schematic contents is the most commonly recognized approach. However, at times, cross-mapping alone is insufficient and some further simplification procedures are favorable. This paper describes the challenges and illustrates using real case studies, how schematics re-ordering and substitutions can be useful to simplify and enhance circuit analysis. These procedures can be implemented in an automated manner to enhance turnaround time for analysis.


Author(s):  
G. Ranganathan ◽  
V.K. Ravikumar ◽  
S.L. Phoa ◽  
C. Nemirow ◽  
N. Leslie

Abstract Laser Voltage imaging (LVI) is an established and widely used technique for isolating scan chain failures, especially those that are stuck-at a particular state. Enhancements such as second harmonic mapping have been beneficial in detecting a fault that is not stuck, but caused a shift in duty-cycle of the injected signal. In this paper, we describe Phase LVI which is constructed by integrating a lock-in amplifier as an enhancement to LVI for studying the relative phases between scan flops. Additionally we showcase case studies of successful fault isolation using phase LVI, where traditional LVI techniques were not successful.


Author(s):  
Bence Hevesi

Abstract In this paper, different failure analysis (FA) workflows are showed which combines different FA approaches for fast and efficient fault isolation and root cause analysis in system level products. Two case studies will be presented to show the importance of a well-adjusted failure analysis workflow.


Author(s):  
Sukho Lee ◽  
Marc van Veenhuizen ◽  
Paolo Navaretti ◽  
Gaia Donati

Abstract Lock-in techniques enable the detection of very small signals in a background that can be dominated by noise. This strength makes these techniques valuable especially for failure analysis of active devices where the deviation may be difficult to detect. This paper describes novel use case applications in which the lock-in amplifier plays a key role. The case studies covered are multi-frequency mapping fault isolation with nonperiodic patterns and frequency resonance measurement of a micro electro-mechanical system (MEMS) gyroscope. The paper presents how lock-in amplifiers enable digital failure analysis using compressed scan patterns. It reports on using a lock-in to characterize a MEMS gyroscope and on how to directly observe the gyroscope motion using phase laser voltage imaging/electro-optical frequency mapping. It can be concluded that the lock-in techniques form an essential part of the failure analysis toolkit and will only be more so with this study.


Author(s):  
Hui Peng Ng ◽  
Angela Teo ◽  
Ghim Boon Ang ◽  
Alfred Quah ◽  
N. Dayanand ◽  
...  

Abstract This paper discussed on how the importance of failure analysis to identify the root cause and mechanism that resulted in the MEMS failure. The defect seen was either directly on the MEMS caps or the CMOS integrated chip in wafer fabrication. Two case studies were highlighted in the discussion to demonstrate how the FA procedures that the analysts had adopted in order to narrow down to the defect site successfully on MEMS cap as well as on CMOS chip on MEMS package units. Besides the use of electrical fault isolation tool/technique such as TIVA for defect localization, a new physical deprocessing approach based on the cutting method was performed on the MEMS package unit in order to separate the MEMS from the Si Cap. This approach would definitely help to prevent the introduction of particles and artifacts during the PFA that could mislead the FA analyst into wrong data interpretation. Other FA tool such as SEM inspection to observe the physical defect and Auger analysis to identify the elements in the defect during the course of analysis were also documented in this paper.


2021 ◽  
Author(s):  
Kuang-Tse Ho ◽  
Cheng-Che Li

Abstract This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM analysis are also presented in detail.


Author(s):  
Kevin Distelhurst ◽  
Doug Hunt ◽  
Dan Bader

Abstract The limitations of Moore’s Law have led to alternatives in semiconductor packages that provide more functionality. Stacking multiple chips in 2.5D and 3D configurations has become a common solution. During the development of these technologies, test chains of chip to chip micro bumps and thru silicon via’s (TSV’s) at various regions within the stack are often employed. These present new challenges to the already difficult process of localizing open and resistive chain fails deep within the stack for root-cause analysis. A combination of quick and effective fault isolation techniques is often required to reliably isolate an open in a time critical situation. Capacitive measurements is a useful technique in some cases for obtaining a quick general location of an open. Magnetic Field Imaging (MFI), specifically Space Domain Reflectometry (SDR), is a non-destructive technique that can provide a relatively accurate location of an open. Electron Beam Absorbed Current (EBAC) is another useful technique in confirming and further isolating the open as the region of interest of the sample is approached via cross-sectioning or planar deprocessing. Case studies using these three techniques are presented and their strengths and weaknesses are discussed. The case studies focus on ìbump and chip bump chains in 2.5D samples.


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