scholarly journals Failure Case Studies of GaAs-Based Oxide-Confined VCSELs

Author(s):  
Kuang-Tse Ho ◽  
Cheng-Che Li

Abstract This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM analysis are also presented in detail.

Author(s):  
Kuang-Tse Ho ◽  
Ching-Hsiang Chan

Abstract This research summarizes a variety of physical failure modes of GaAs-based oxide-confined VCSELs and their root causes. Standard failure analysis procedure, which includes defect fault isolation by PEM or IR-OBIRCH and physical inspection by TEM analysis are also presented in detail.


Author(s):  
George M. Wenger ◽  
Richard J. Coyle ◽  
Patrick P. Solan ◽  
John K. Dorey ◽  
Courtney V. Dodd ◽  
...  

Abstract A common pad finish on area array (BGA or CSP) packages and printed wiring board (PWB) substrates is Ni/Au, using either electrolytic or electroless deposition processes. Although both Ni/Au processes provide flat, solderable surface finishes, there are an increasing number of applications of the electroless nickel/immersion gold (ENi/IAu) surface finish in response to requirements for increased density and electrical performance. This increasing usage continues despite mounting evidence that Ni/Au causes or contributes to catastrophic, brittle, interfacial solder joint fractures. These brittle, interfacial fractures occur early in service or can be generated under a variety of laboratory testing conditions including thermal cycling (premature failures), isothermal aging (high temperature storage), and mechanical testing. There are major initiatives by electronics industry consortia as well as research by individual companies to eliminate these fracture phenomena. Despite these efforts, interfacial fractures associated with Ni/Au surface finishes continue to be reported and specific failure mechanisms and root cause of these failures remains under investigation. Failure analysis techniques and methodologies are crucial to advancing the understanding of these phenomena. In this study, the scope of the fracture problem is illustrated using three failure analysis case studies of brittle interfacial fractures in area array solder interconnects. Two distinct failure modes are associated with Ni/Au surface finishes. In both modes, the fracture surfaces appear to be relatively flat with little evidence of plastic deformation. Detailed metallography, scanning electron microscopy (SEM), energy dispersive x-ray analysis (EDX), and an understanding of the metallurgy of the soldering reaction are required to avoid misinterpreting the failure modes.


Author(s):  
M.K. Dawood ◽  
C. Chen ◽  
P.K. Tan ◽  
S. James ◽  
P.S. Limin ◽  
...  

Abstract In this work, we present two case studies on the utilization of advanced nanoprobing on 20nm logic devices at contact layer to identify the root cause of scan logic failures. In both cases, conventional failure analysis followed by inspection of passive voltage contrast (PVC) failed to identify any abnormality in the devices. Technology advancement makes identifying failure mechanisms increasingly more challenging using conventional methods of physical failure analysis (PFA). Almost all PFA cases for 20nm technology node devices and beyond require Transmission Electron Microscopy (TEM) analysis. Before TEM analysis can be performed, fault isolation is required to correctly determine the precise failing location. Isolated transistor probing was performed on the suspected logic NMOS and PMOS transistors to identify the failing transistors for TEM analysis. In this paper, nanoprobing was used to isolate the failing transistor of a logic cell. Nanoprobing revealed anomalies between the drain and bulk junction which was found to be due to contact gouging of different severities.


Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.


2021 ◽  
Author(s):  
Kuang-Tse Ho ◽  
Cheng-Che Li

Abstract This research summarizes failure analysis results about ionimplantation related issues in Si-based power devices, including diode, MOSFET and IGBT. To find out this kind of defects, sample preparation, fault isolation and SCM inspection are critical steps, which will be explained in detail in this paper.


Author(s):  
Lihong Cao ◽  
Manasa Venkata ◽  
Jeffery Huynh ◽  
Joseph Tan ◽  
Meng-Yeow Tay ◽  
...  

Abstract This paper describes the application of lock-in thermography (LIT) for flip-chip package-level failure analysis. LIT successfully detected and localized short failures related to both die/C4 bumps and package defects inside the organic substrate. The detail sample preparation to create short defects at different layers, LIT fault isolation methodology, and case studies performed with LIT are also presented in this paper.


Author(s):  
Bence Hevesi

Abstract In this paper, different failure analysis (FA) workflows are showed which combines different FA approaches for fast and efficient fault isolation and root cause analysis in system level products. Two case studies will be presented to show the importance of a well-adjusted failure analysis workflow.


Author(s):  
Sukho Lee ◽  
Marc van Veenhuizen ◽  
Paolo Navaretti ◽  
Gaia Donati

Abstract Lock-in techniques enable the detection of very small signals in a background that can be dominated by noise. This strength makes these techniques valuable especially for failure analysis of active devices where the deviation may be difficult to detect. This paper describes novel use case applications in which the lock-in amplifier plays a key role. The case studies covered are multi-frequency mapping fault isolation with nonperiodic patterns and frequency resonance measurement of a micro electro-mechanical system (MEMS) gyroscope. The paper presents how lock-in amplifiers enable digital failure analysis using compressed scan patterns. It reports on using a lock-in to characterize a MEMS gyroscope and on how to directly observe the gyroscope motion using phase laser voltage imaging/electro-optical frequency mapping. It can be concluded that the lock-in techniques form an essential part of the failure analysis toolkit and will only be more so with this study.


Author(s):  
Haonan Bai ◽  
Lan Yin Lee ◽  
Yang Jing ◽  
Peter Floyd Salinas ◽  
Kok Keng Chua

Abstract Failure analysis and defect localization on 28nm All Programmable Zynq System-on-Chip (SoC) device is extremely challenging. While conventional FPGA, which only consists of the Programmable Logic, has greater ease and flexibility in pattern generation during fault isolation, the all programmable SoC device integrates a dual ARM Cortex-A9 cores with Programmable Logic (PL) in a single chip. The cache data access in-between processor and PL is more complex and test methodology has lesser degree of control on cache data flow and stack sequence. This paper introduced an advanced fault isolation test methodology combining Software Development Kit (SDK) with scan based diagnostic test for cache failures. It successfully pinpoint to failure locations with physical defects found. As conventional physical failure analysis approaches using SEM based passive voltage contrast could not observe any abnormalities, current imaging and nano-probing measurement using AFP played critical roles in detecting nano-ampere leakages prior subsequent TEM analysis. The findings were then feedback to the foundry for process improvement. Furthermore, a new screening methodology is innovated where an extreme low-voltage test at high temperature in Automatic Test to detect and eliminate the process marginal leakage failure.


Author(s):  
Hui Peng Ng ◽  
Angela Teo ◽  
Ghim Boon Ang ◽  
Alfred Quah ◽  
N. Dayanand ◽  
...  

Abstract This paper discussed on how the importance of failure analysis to identify the root cause and mechanism that resulted in the MEMS failure. The defect seen was either directly on the MEMS caps or the CMOS integrated chip in wafer fabrication. Two case studies were highlighted in the discussion to demonstrate how the FA procedures that the analysts had adopted in order to narrow down to the defect site successfully on MEMS cap as well as on CMOS chip on MEMS package units. Besides the use of electrical fault isolation tool/technique such as TIVA for defect localization, a new physical deprocessing approach based on the cutting method was performed on the MEMS package unit in order to separate the MEMS from the Si Cap. This approach would definitely help to prevent the introduction of particles and artifacts during the PFA that could mislead the FA analyst into wrong data interpretation. Other FA tool such as SEM inspection to observe the physical defect and Auger analysis to identify the elements in the defect during the course of analysis were also documented in this paper.


Sign in / Sign up

Export Citation Format

Share Document