Isolating an Open in 2.5D µBump & Chip Bump Chains using SDR, EBAC and Capacitive Measurements

2019 ◽  
Author(s):  
Kevin Distelhurst ◽  
Doug Hunt ◽  
Dan Bader
Keyword(s):  
Case Studies ◽  
Region Of Interest ◽  
Fault Isolation ◽  
Common Solution ◽  
Root Cause ◽  
Isolation Techniques ◽  
Magnetic Field Imaging ◽  
Semiconductor Packages ◽  
Time Critical ◽  
Non Destructive

Abstract The limitations of Moore’s Law have led to alternatives in semiconductor packages that provide more functionality. Stacking multiple chips in 2.5D and 3D configurations has become a common solution. During the development of these technologies, test chains of chip to chip micro bumps and thru silicon via’s (TSV’s) at various regions within the stack are often employed. These present new challenges to the already difficult process of localizing open and resistive chain fails deep within the stack for root-cause analysis. A combination of quick and effective fault isolation techniques is often required to reliably isolate an open in a time critical situation. Capacitive measurements is a useful technique in some cases for obtaining a quick general location of an open. Magnetic Field Imaging (MFI), specifically Space Domain Reflectometry (SDR), is a non-destructive technique that can provide a relatively accurate location of an open. Electron Beam Absorbed Current (EBAC) is another useful technique in confirming and further isolating the open as the region of interest of the sample is approached via cross-sectioning or planar deprocessing. Case studies using these three techniques are presented and their strengths and weaknesses are discussed. The case studies focus on ìbump and chip bump chains in 2.5D samples.

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2015 ◽  
Vol 2015 (1) ◽  
pp. 000469-000473 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

Failure Analysis Work Flow for Electrical Shorts in Triple Stacked 3D TSV Daisy Chains

2014 ◽  
Author(s):  
J. Gaudestad ◽  
A. Orozco ◽  
I. De Wolf ◽  
T. Wang ◽  
T. Webers ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Fault Isolation ◽  
Root Cause ◽  
Current Path ◽  
Dual Beam ◽  
Resolution Imaging ◽  
Magnetic Field Imaging ◽  
Non Destructive

Abstract In this paper we show an efficient workflow that combines Magnetic Field Imaging (MFI) and Dual Beam Plasma Focused Ion Beam (DB-PFIB) for fast and efficient Fault Isolation and root cause analysis in 2.5/3D devices. The work proves MFI is the best method for Electric Fault Isolation (EFI) of short failures in 2.5/3D Through Silicon Via (TSV) triple stacked devices in a true non-destructive way by imaging the current path. To confirm the failing locations and to do Physical Failure Analysis (PFA), a DB-PFIB system was used for cross sectioning and volume analysis of the TSV structures and high resolution imaging of the identified defects. With a DB-PFIB, the fault is exposed and analyzed without any sample prep artifacts seen in mechanical polishing or laser preparation techniques and done in a considerably shorter amount of time than that required when using a traditional Gallium Focused Ion Beam (FIB).

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

3D IC/Stacked Device Fault Isolation Using 3D Magnetic Field Imaging

2014 ◽  
Author(s):  
A. Orozco ◽  
N.E. Gagliolo ◽  
C. Rowlett ◽  
E. Wong ◽  
A. Moghe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fault Isolation ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Current Location ◽  
Geometrical Information ◽  
Magnetic Field Imaging ◽  
Silicon Vias ◽  
Non Destructive ◽  
Field Imaging

Abstract The need to increase transistor packing density beyond Moore's Law and the need for expanding functionality, realestate management and faster connections has pushed the industry to develop complex 3D package technology which includes System-in-Package (SiP), wafer-level packaging, through-silicon-vias (TSV), stacked-die and flex packages. These stacks of microchips, metal layers and transistors have caused major challenges for existing Fault Isolation (FI) techniques and require novel non-destructive, true 3D Failure Localization techniques. We describe in this paper innovations in Magnetic Field Imaging for FI that allow current 3D mapping and extraction of geometrical information about current location for non-destructive fault isolation at every chip level in a 3D stack.

scholarly journals Assessing Deteriorated Concrete Structures

2021 ◽  
Author(s):  
Joseph Greto
Keyword(s):  
Case Studies ◽  
Concrete Structures ◽  
Test Methods ◽  
Rehabilitation Engineering ◽  
Research Project ◽  
Root Cause ◽  
Concrete Deterioration ◽  
Concrete Failure ◽  
Non Destructive ◽  
Selection Of

In today’s society, concrete structures are deteriorating for a variety of reasons. In order to properly repair these structures, it is important to completely understand the root cause of each type of deterioration. Over the years, engineers have developed methods for identifying the causes of concrete failure. This paper recognizes the different forms of concrete deterioration, identifies the test methods which have been developed to locate these concrete defects (both non-destructive and destructive), reviews different case studies which have been performed on concrete parking structures implementing these test methods and draws conclusions from surveys which were conducted of professionals in the rehabilitation engineering field. Additionally, this research project develops a strategy which is meant to aid with the selection of concrete test methods to be used in diverse concrete deterioration situations.

Challenges of System Level Failure Analysis of Electronics in the Automotive Industry

2017 ◽  
Author(s):  
Bence Hevesi
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Automotive Industry ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
System Level ◽  
Cause Analysis ◽  
Root Cause ◽  
Analysis Workflow

Abstract In this paper, different failure analysis (FA) workflows are showed which combines different FA approaches for fast and efficient fault isolation and root cause analysis in system level products. Two case studies will be presented to show the importance of a well-adjusted failure analysis workflow.

Isolating Electrically Open Laminate Defects Using Space Domain Reflectometry with a Superconducting Quantum Interference Device

2015 ◽  
Author(s):  
Kevin A. Distelhurst
Keyword(s):  
Quantum Interference ◽  
Fault Isolation ◽  
Superconducting Quantum Interference Device ◽  
Isolation Techniques ◽  
Superconducting Quantum Interference ◽  
Magnetic Field Imaging ◽  
Open Defect ◽  
Arbitrary Location ◽  
Rf Signal ◽  
Obstacle Analysis

Abstract An electrically open defect on a laminate may not always be found timely or successfully due to the lack of fault isolation techniques for this type of defect. This is partly due to needing high frequency techniques to isolate the location of the open. Magnetic field imaging (MFI) using a Superconducting Quantum Interference Device (SQUID) is a technique that maps, in this case, an RF signal through a trace, up until the open defect boundary. Several obstacles are introduced when using an RF signal, one of which is the shielding of the signal from the external world. Despite this obstacle, analysis of an open in an arbitrary location along a laminate under a copper plane is proven successful using this technique.

Magnetic Field Imaging for Non-Destructive 3D Package Fault Isolation

2014 ◽  
Vol 2014 (1) ◽  
pp. 000635-000640
Author(s):  
Jan Gaudestad ◽  
David Vallett
Keyword(s):  
Magnetic Field ◽  
Product Life Cycle ◽  
Fault Isolation ◽  
Product Returns ◽  
Magnetic Field Imaging ◽  
The One ◽  
In The Beginning ◽  
3D Package ◽  
Non Destructive ◽  
Field Imaging

While microelectronic packages are becoming more and more advanced, the need for non-destructive Electrical Fault Isolation (EFI) becomes ever more critical for the entire product life-cycle ranging from the chip development yield enhancements to failures on product returns. In the beginning of product development, short failures are often the main issue while opens and cracks become the reliability problems after the product reaches the marketplace. In this paper we present Magnetic Field Imaging (MFI) as the one technique that can find all static defects: shorts, leakages and opens in a true non-destructive way.

Combining Volume Scan Diagnosis and Dynamic Failure Analysis for Precise Isolation of Manufacturing Defects

2017 ◽  
Author(s):  
A.M. Jakati ◽  
R. Deshpande ◽  
K.A. Serrels ◽  
P. Babighian ◽  
G. Dabney ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Photon Emission ◽  
Fault Isolation ◽  
Manufacturing Defects ◽  
Voltage Imaging ◽  
Isolation Techniques ◽  
Advanced Technologies ◽  
Manufacturing Technologies ◽  
Non Destructive ◽  
Random Particle

Abstract Advances in semiconductor manufacturing technologies have led to newer types of defects that are difficult to identify, causing longer yield ramp times. Traditionally, yield has been limited to random particle defects but layout systematic defects are increasingly dominating the fail paretos on advanced technologies. Identifying systematic defects precisely and rapidly is a must. This paper codifies a methodology that combines volume scan diagnosis and non-destructive electrical fault isolation techniques such as photon-emission microscopy, soft defect localization and laser voltage imaging/probing to debug manufacturing defects precisely.

MEMS Failure Analysis In Wafer Fabrication

2016 ◽  
Author(s):  
Hui Peng Ng ◽  
Angela Teo ◽  
Ghim Boon Ang ◽  
Alfred Quah ◽  
N. Dayanand ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Data Interpretation ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Auger Analysis ◽  
Root Cause ◽  
Defect Site ◽  
Defect Localization ◽  
Cmos Chip

Abstract This paper discussed on how the importance of failure analysis to identify the root cause and mechanism that resulted in the MEMS failure. The defect seen was either directly on the MEMS caps or the CMOS integrated chip in wafer fabrication. Two case studies were highlighted in the discussion to demonstrate how the FA procedures that the analysts had adopted in order to narrow down to the defect site successfully on MEMS cap as well as on CMOS chip on MEMS package units. Besides the use of electrical fault isolation tool/technique such as TIVA for defect localization, a new physical deprocessing approach based on the cutting method was performed on the MEMS package unit in order to separate the MEMS from the Si Cap. This approach would definitely help to prevent the introduction of particles and artifacts during the PFA that could mislead the FA analyst into wrong data interpretation. Other FA tool such as SEM inspection to observe the physical defect and Auger analysis to identify the elements in the defect during the course of analysis were also documented in this paper.

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