Deep trench capacitor in three dimensional through silicon via keepout area for electrostatic discharge protection

2015 ◽  
Author(s):  
Nazmul Habib ◽  
Mujahid Muhammad ◽  
Jeanne Bickford ◽  
John Safran ◽  
Ahmed Y Ginawi ◽  
...  
Keyword(s):  
Electrostatic Discharge ◽  
Three Dimensional ◽  
Through Silicon Via ◽  
Deep Trench

Deep Trench Capacitor in Three Dimensional Through Silicon via Keepout Area for Electrostatic Discharge Protection

2016 ◽  
Vol 29 (4) ◽  
pp. 292-298 ◽  
Author(s):  
Nazmul Habib ◽  
Mujahid Muhammad ◽  
Jeanne Paulette Bickford ◽  
John Safran ◽  
Ahmed Y. Ginawi ◽  
...  
Keyword(s):  
Electrostatic Discharge ◽  
Three Dimensional ◽  
Through Silicon Via ◽  
Deep Trench

Effect of Through-Silicon-Via Joule Heating on Device Performance for Low-Powered Mobile Applications

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Fahad Mirza ◽  
Gaurang Naware ◽  
Ankur Jain ◽  
Dereje Agonafer
Keyword(s):  
Joule Heating ◽  
Mobile Applications ◽  
High Speed ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Junction Temperature ◽  
Device Performance ◽  
Through Silicon Via ◽  
Heterogeneous Devices ◽  
Efficient Integration

Three-dimensional (3D) through-silicon-via (TSV) technology is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. TSVs provide high speed signal propagation due to reduced interconnect lengths as compared to wire-bonding. The current flowing through the TSVs results in localized heat generation (joule heating), which could be detrimental to the device performance. The effect of joule heating on performance measured by transconductance, electron mobility (e− mobility), and channel thermal noise is presented. Results indicate that joule heating has a significant effect on the junction temperature and subsequently results in 10–15% performance hit.

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