A LOW-VOLTAGE LOW-POWER CMOS PHASE-LOCKED LOOP

2005 ◽  
Vol 14 (05) ◽  
pp. 997-1006 ◽  
Author(s):  
ROBERT C. CHANG ◽  
LUNG-CHIH KUO ◽  
HOU-MING CHEN
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Loop Filter ◽  
Phase Frequency Detector ◽  
Low Power Cmos ◽  
Charge Pump Circuit ◽  
Frequency Detector

A low-voltage low-power CMOS phase-locked loop (PLL) is presented in this paper. It consists of a phase frequency detector, a charge pump, a loop filter, a voltage-control oscillator, and a frequency divider. A new phase frequency detector is proposed to reduce the dead zone and the mismatch effect of the charge pump circuit. A novel charge pump circuit with a small area and wide output range is described. The PLL circuit has been designed using the TSMC 0.35 μm 1P4M CMOS technology. The chip area is 1.08 mm × 1.01 mm. The post-layout simulation results show that the frequency of 900 MHz can be generated with a single supply voltage of 1.5 V. The power dissipation of the circuit is 9.17 mW.

Analysis and Design of High Performance Phase Frequency Detector, Charge Pump and Loop Filter Circuits for Phase Locked Loop in Wireless Applications

2016 ◽  
Vol 4 (2) ◽  
pp. 397
Author(s):  
P.N. Metange ◽  
K. B. Khanchandani
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Charge Pump ◽  
Phase Locked Loop ◽  
Loop Filter ◽  
Phase Frequency Detector ◽  
Analysis And Design ◽  
Wireless Applications ◽  
5 Ghz ◽  
Frequency Detector

<p>This paper presents the analysis and design of high performance phase frequency detector, charge pump and loop filter circuits for phase locked loop in wireless applications. The proposed phase frequency detector (PFD) consumes only 8 µW and utilises small area. Also, at 1.8V voltage supply the maximum operation frequency of the conventional PFD is 500 MHz whereas proposed PFD is 5 GHz. Hence, highly suitable for low power, high speed and low jitter applications.  The differential charge pump uses switches using NMOS and the inverter delays for up and down signals do not generate any offset due to its fully symmetric operation. This configuration doubles the range of output voltage compliance compared to single ended charge pump. Differential stage is less sensitive to the leakage current since leakage current behaves as common mode offset with the dual output stages. All the circuits are implemented using cadence 0.18 μm CMOS Process.</p>

A low-voltage, low-power voltage reference based on subthreshold MOSFETs

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740069 ◽  
Author(s):  
Liangwei Dong ◽  
Yueli Hu
Keyword(s):  
Low Power ◽  
Temperature Coefficient ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Channel Length ◽  
Voltage Reference ◽  
Single Chip ◽  
Low Power Cmos ◽  
Cmos Voltage Reference

A novel low-voltage low-power CMOS voltage reference independent of temperature is presented in this design. After considering the combined effect of (1) a perfect suppression of the temperature dependence of mobility; (2) the compensation of the channel length modulation effect on the temperature coefficient, a temperature coefficient of 10 ppm/[Formula: see text]C is achieved. Moreover, by adopting the subthreshold MOSFETs, there are no resistors used in the proposed structure. Therefore, the maximum supply current measured at the maximum supply voltage is 70 nA and at 80[Formula: see text]C. The circuit can be used as a voltage reference for high performance and low power dissipation on a single chip.

Design of improved CMOS phase-frequency detector and charge-pump for phase-locked loop

2014 ◽  
Vol 35 (10) ◽  
pp. 105006 ◽  
Author(s):  
Faen Liu ◽  
Zhigong Wang ◽  
Zhiqun Li ◽  
Qin Li ◽  
Sheng Chen
Keyword(s):  
Charge Pump ◽  
Phase Locked Loop ◽  
Phase Frequency Detector ◽  
Frequency Detector

scholarly journals Integer N Synthesizer Design for LoRa Transceivers

2021 ◽  
Vol 10 (10) ◽  
pp. 101-106
Author(s):  
Vitor Fialho* ◽  
Keyword(s):  
Steady State ◽  
Charge Pump ◽  
Settling Time ◽  
Loop Filter ◽  
Steady State Analysis ◽  
Phase Frequency Detector ◽  
Voltage Controlled Oscillators ◽  
Frequency Detector ◽  
State Analysis

This paper presents the study and design of an Integer N synthesizer model for three LoRa ISM bands: 430 MHz 868 MHz and 915 MHz. The proposed topology is composed by two voltage controlled oscillators working in two different bands. The presented model uses the same phase-frequency detector, charge pump and loop filter. This study is focused on dynamic and steady-state analysis in order to infer the synthesizer stability and bandwidth. The performed study shows that the settling time for all bands is less than 40 µs for a bandwidth of 102 kHz.

Efficient techniques of fractional-N PLL for pervasive wireless applications

2022 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Azeem Mohammed Abdul ◽  
Usha Rani Nelakuditi
Keyword(s):  
Phase Noise ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Oxide Semiconductor ◽  
Wireless Devices ◽  
Phase Frequency Detector ◽  
Content Type ◽  
Wireless Applications ◽  
Frequency Detector

Purpose The purpose of this paper to ensure the rapid developments in the radio frequency wireless technology, the synthesis of frequencies for pervasive wireless applications is crucial by implementing the design of low voltage and low power Fractional-N phase locked loop (PLL) for controlling medical devices to monitor remotely patients. Design/methodology/approach The developments urge a technique reliable to phase noise in designing fractional-N PLL with a new eight transistor phase frequency detector and a good linearized charge pump (CP) for speed of operation with minimum mismatches. Findings In applications for portable wireless devices, by proposing a new phase-frequency detector with the removal of dead, blind zones and a modified CP to minimize the mismatch of currents. Originality/value The results are simulated in 45 nm complementary metal oxide semiconductor generic process design kit (GPDK) technology in cadence virtuoso. The phase noise of the proposed Fractiona-N phase locked loop has–93.18, –101.4 and –117 dBc/Hz at 10 kHz, 100 kHz and 1 MHz frequency offsets, respectively, and consumes 3.3 mW from a 0.45 V supply.

scholarly journals A Negative Charge Pump Using Enhanced Pumping Clock for Low-Voltage DRAM

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1769 ◽  
Author(s):  
Choongkeun Lee ◽  
Taegun Yim ◽  
Hongil Yoon
Keyword(s):  
High Speed ◽  
Negative Charge ◽  
Low Voltage ◽  
Supply Voltage ◽  
Charge Pump ◽  
Clock Generator ◽  
Area Overhead ◽  
Pumping Efficiency ◽  
Charge Pump Circuit ◽  
Low Supply Voltage

As the supply voltage decreases, there is a need for a high-speed negative charge pump circuit, for example, to produce the back-bias voltage (VBB) with high pumping efficiency at a low supply voltage (VDD). Beyond the basic negative charge pump circuit with the small area overhead, advanced schemes such as hybrid pump circuit (HCP) and cross-coupled hybrid pump circuits (CHPC) were introduced to improve the pumping efficiency and pump down speed. However, they still suffer from pumping efficiency degradation, low level |VBB|, and small pumping currents at very low VDD. A novel negative charge pump using an enhanced pumping clock is proposed. The proposed cross-coupled charge pump consists of the enhanced pumping clock generator (ECG) having a pair of inverters and PMOS latch circuit to produce an enhanced control signal with a greater amplitude, thereby working efficiently especially at low supply voltages. The proposed scheme is validated with a HSPICE simulation using the TSMC 180 nm process. The proposed scheme can be operated down to VDD = 0.4 V, and |VBB|/VDD is obtained to be 86.1% at VDD = 0.5 V and Cload = 20 nF. Compared to the state-of-the-art CHPC scheme, the pumping efficiency is larger by 35% at VDD = 0.6 V and RL = 10 KΩ, and the pumping current is 2.17 times greater at VDD = 1.2 V and VBB = 0 V, making the circuit suitable for very low supply voltage applications in DRAMs.

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