Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing

2000 ◽  
Vol 618 ◽  
Author(s):  
D. T. K. Kwok ◽  
A. H. P. Ho ◽  
X. C. Zeng ◽  
C. Chan ◽  
P. K. Chu ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Crystal Form ◽  
Organic Chemical ◽  
Plasma Immersion Ion Implantation ◽  
Amorphous Surface

ABSTRACTRecent advances in the preparation of gallium nitride (GaN) and related compounds have made possible the production of blue semiconductor laser. Conventional preparation involves growing GaN thin films on lattice-mismatching sapphire using metal-organic chemical vapor deposition (MOCVD). In this article, we describe an alternative method to produce a lattice-matching strained layer in GaAs for subsequent GaN growth by plasma immersion ion implantation (PIII) followed by rapid thermal annealing. Our novel approach uses broad ion impact energy distribution and multiple implant voltages to form a spread-out nitrogen depth profile and an amorphous surface layer. This approach circumvents the retained dose and low nitrogen content problems associated with ion beam implantation at fix energy. Based on our Raman study, the resulting structure after PIII and rapid thermal annealing is strained and contains some GaN possibly in crystal form

Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

Formation of Cosi2-Shallow Junctions By Ion Beam Mixing and Rapid Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
L. Niewöhner ◽  
D. Depta
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Dopant Distribution ◽  
Junction Depth ◽  
Ion Beam Mixing ◽  
Sem And Tem ◽  
Shallow Junctions

ABSTRACTFormation of CoSi2 using the technique of ion implantation through metal (ITM) and subsequent appropriate rapid thermal annealing is described. Silicide morphology is investigated by SEM and TEM. SIMS and RBS are used to determine dopant distribution and junction depth. Self-aligned CoSi2/n+p diodes produced in this technique are presented.

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

1988 ◽  
Vol 144 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. A. Armiento
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Low Energy ◽  
Exciton Transition ◽  
Transition Energies ◽  
Diffusion Of Vacancies ◽  
Implantation Fluence

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

EFFECT OF RAPID THERMAL ANNEALING ON THE Mg-DOPED GaN/Si FILM

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4034-4039
Author(s):  
LIPING ZHU ◽  
ZHIZHEN YE ◽  
XIANFENG NI ◽  
ZHE ZHAO ◽  
BINGHUI ZHAO
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition ◽  
Better Than ◽  
Mg Doped

Mg -doped GaN films have been successfully prepared on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). Upon rapid thermal annealing (RTA) treatment, the films showed p-type conductivity with a carrier density of 7.84 cm-3, a mobility of 5.54 cm2V-1s-1, and a resistivity of about 0.144 Ωcm, which were much better than that of the films without rapid thermal annealing (RTA) treatment. It was found that the surface morphology and crystal quality of the obtained p-type GaN films were greatly improved by RTA treatment, while the residual stress and dislocations in these films were decreased.

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

2009 ◽  
Vol 1155 ◽  
Author(s):  
Karol Fröhlich ◽  
Andrej Vincze ◽  
Edmund Dobročka ◽  
Kristina Hušeková ◽  
Karol Čičo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Organic Chemical ◽  
Strong Reaction ◽  
X Ray ◽  
Tof Sims ◽  
Thermal Stability Of

AbstractWe present analysis of thermal stability of thin GdScO3 films grown on silicon and InAlN/GaN substrates. The GdScO3 films were prepared by liquid injection metal organic chemical vapor deposition at 600 °C. The films were processed after deposition by rapid thermal annealing in nitrogen ambient at 900, 1000 and 1100 °C during 10 s. In addition, annealing of the GdScO3 films on InAlN/GaN substrate at 700 °C during 3 hours was performed. The samples were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectroscopy (ToF SIMS). GIXRD confirmed that the as-deposited GdScO3 films were amorphous. Recrystallization of the films on both substrates occurred at 1100 °C. ToF SIMS depth profile of the films annealed at 1000 °C indicated strong reaction of the GdScO3 film with the Si substrate. For the InAlN/GaN substrate rapid thermal annealing at 900 °C induced diffusion of the In and Al atoms into the top GdScO3 layer. Thermal treatment at 700 °C for 3 hours presents upper limit of the acceptable thermal budget for the GdScO3/InAlN interface.

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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