In this work, the packaging design and development of a high voltage (> 15 kV), high current (120 A) silicon carbide (SiC) multi-chip power module (MCPM) will be presented. The module implements a MCPM packaging strategy which itself uses subassemblies to reduce manufacturing costs through reworkability. The use of solderless internal connections aids in reducing cost both by simplifying the assembly process as well as enabling a high level of flexibility in the manufacturing process in order to drive down costs by increasing yield. A wire bondless flip-chip die interconnection scheme has been developed in parallel with a more traditional wire bonded method. Both presented approaches utilize a common set of parts with minimal differences due to the divergent portions of each interconnection scheme. Device neutrality in this design ensures that a variety of die types from any manufacturer may be housed in a number of arrangements depending on the requirements of the end-use application without requiring significant redesign effort for each new application or improvement in device technology. The SiC MCPM is constructed using high temperature capable materials, enabling operation at high junction temperatures. This leads to the ability to design a small, low profile module with low parasitic inductances and a small junction to case thermal resistance. A low module thermal resistance makes it possible to significantly reduce the size and complexity of the cooling systems, ultimately, reducing the size of the system. Thus, this novel high voltage SiC MCPM represents a significant step forward in high voltage switching applications. This paper discusses the overall mechanical design of the SiC high voltage MCPM; the three-dimensional finite-element modeling and analysis of the thermal and electrical characteristics of the high voltage power module are also presented.
Co-design/simulation of flip-chip assembly for high voltage IGBT packages
