The Design and Development of a 15 kV SiC Half-Bridge Multi-Chip Power Module for Medium Voltage Applications

2014 ◽  
Vol 2014 (1) ◽  
pp. 000751-000756 ◽  
Author(s):  
Z. Cole ◽  
J. Stabach ◽  
G. Falling ◽  
P. Killeen ◽  
T. McNutt ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
High Voltage ◽  
Flip Chip ◽  
Mechanical Design ◽  
Three Dimensional ◽  
Power Module ◽  
Design And Development ◽  
Modeling And Analysis ◽  
High Level ◽  
Three Dimensional Finite Element

In this work, the packaging design and development of a high voltage (> 15 kV), high current (120 A) silicon carbide (SiC) multi-chip power module (MCPM) will be presented. The module implements a MCPM packaging strategy which itself uses subassemblies to reduce manufacturing costs through reworkability. The use of solderless internal connections aids in reducing cost both by simplifying the assembly process as well as enabling a high level of flexibility in the manufacturing process in order to drive down costs by increasing yield. A wire bondless flip-chip die interconnection scheme has been developed in parallel with a more traditional wire bonded method. Both presented approaches utilize a common set of parts with minimal differences due to the divergent portions of each interconnection scheme. Device neutrality in this design ensures that a variety of die types from any manufacturer may be housed in a number of arrangements depending on the requirements of the end-use application without requiring significant redesign effort for each new application or improvement in device technology. The SiC MCPM is constructed using high temperature capable materials, enabling operation at high junction temperatures. This leads to the ability to design a small, low profile module with low parasitic inductances and a small junction to case thermal resistance. A low module thermal resistance makes it possible to significantly reduce the size and complexity of the cooling systems, ultimately, reducing the size of the system. Thus, this novel high voltage SiC MCPM represents a significant step forward in high voltage switching applications. This paper discusses the overall mechanical design of the SiC high voltage MCPM; the three-dimensional finite-element modeling and analysis of the thermal and electrical characteristics of the high voltage power module are also presented.

A High Temperature, High Power Density Package for SiC and GaN Power Devices

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000208-000213 ◽  
Author(s):  
Z. Cole ◽  
B. McGee ◽  
J. Stabach ◽  
C. B. O'Neal ◽  
B. Passmore
Keyword(s):  
High Temperature ◽  
Power Density ◽  
High Power ◽  
Mechanical Design ◽  
Three Dimensional ◽  
High Power Density ◽  
Power Module ◽  
Modeling And Analysis ◽  
Low Profile ◽  
Three Dimensional Finite Element

In this work, a compact 600 – 1700 V high current power package housing either silicon carbide (SiC) or gallium nitride (GaN) power die was designed and developed. Several notable configurations of the package include diode half-bridges, co-packed MOSFET-diode pairs, and cascode configured GaN devices. In order to avoid a significant redesign effort for each new application or improvement in device technology, a device-neutral design strategy enables the use of a variety of die types from any manufacturer depending on the end-use application's requirements. The basic SOT-227 is a widely used package type found in everything from electronic welders and power supplies to motor controls and inverters. This module is a variant of that style of package which also addresses some issues that a standard SOT-227 package has when used in higher voltage applications; it has increased creepage and clearance distances which meet IPC, UL, and IEC standards up to 1700 volts while retaining an isolated substrate. It also has low parasitic values in comparison to the SOT-227. One of the key elements of this design is the removal of the baseplate. This allows for far lower weight, volume, and cost as well as reduced manufacturing complexity. The wide bandgap power package is composed of high temperature capable materials, which allow for the high junction temperatures inherent in these high power density devices. This paves the way for the design of a small, low-profile package with low parasitic inductances and a small junction-to-case thermal resistance. This paper will discuss the mechanical design of the power package as well as the three-dimensional finite-element modeling and analysis of the thermal, electrical, and mechanical characteristics. In addition, the electrical characteristics as a function of temperature of the power module up to 225 °C will be presented.

Finite Element Analysis of Stress Singularities in Attached Flip Chip Packages

2000 ◽  
Vol 122 (4) ◽  
pp. 301-305 ◽  
Author(s):  
A. Q. Xu ◽  
H. F. Nied
Keyword(s):  
Contact Angle ◽  
Finite Element ◽  
Glass Fiber ◽  
Flip Chip ◽  
Three Dimensional ◽  
Stress Singularity ◽  
Local Stress ◽  
Stress Singularities ◽  
Element Analysis ◽  
Three Dimensional Finite Element

Cracking and delamination at the interfaces of different materials in plastic IC packages is a well-known failure mechanism. The investigation of local stress behavior, including characterization of stress singularities, is an important problem in predicting and preventing crack initiation and propagation. In this study, a three-dimensional finite element procedure is used to compute the strength of stress singularities at various three-dimensional corners in a typical Flip-Chip assembled Chip-on-Board (FCOB) package. It is found that the stress singularities at the three-dimensional corners are always more severe than those at the corresponding two-dimensional edges, which suggests that they are more likely to be the potential delamination sites. Furthermore, it is demonstrated that the stress singularity at the upper silicon die/epoxy fillet edge can be completely eliminated by an appropriate choice in geometry. A weak stress singularity at the FR4 board/epoxy edge is shown to exist, with a stronger singularity located at the internal die/epoxy corner. The influence of the epoxy contact angle and the FR4 glass fiber orientation on stress state is also investigated. A general result is that the strength of the stress singularity increases with increased epoxy contact angle. In addition, it is shown that the stress singularity effect can be minimized by choosing an appropriate orientation between the glass fiber in the FR4 board and the silicon die. Based on these results, several guidelines for minimizing edge stresses in IC packages are presented. [S1043-7398(00)00904-X]

Obtaining the thermal resistance of air enclosed at the interface of multilayer fabrics by simulation

2018 ◽  
Vol 89 (15) ◽  
pp. 3178-3188 ◽  
Author(s):  
Hua Shen ◽  
Lexi Tu ◽  
Xiaofei Yan ◽  
Sachiko Sukigara
Keyword(s):  
Finite Element Method ◽  
Surface Roughness ◽  
Thermal Resistance ◽  
Three Dimensional ◽  
Estimating Equation ◽  
Experimental Result ◽  
Dimensional Finite Element ◽  
Experimental Values ◽  
Three Dimensional Finite Element ◽  
Method Model

An air layer enclosed at the interface was largely responsible for the insulation results of multilayer fabrics obtained from experiments. In this study, a three-dimensional finite element method model, in which the air layer enclosed at the interface of multilayer fabrics was ignored, was developed to calculate the fabric thermal resistance, and the result obtained from the fabric model was independent of the air. A Thermolab II Tester KES-F7 was also used to measure the thermal resistance of fabrics, and the experimental results were influenced by the air layer. By comparing the simulation and experimental result, the air layer thermal resistance was determined, and then an estimating equation, which can be used to estimate the fabric and air layer thermal resistance for multilayer fabrics, was proposed. The results suggested that the surface roughness of fabrics was strongly related to the air layer thermal resistance, with a linear relationship between them. Moreover, for multiple layers stacked by different fabrics, the air layer thermal resistance at the interface was mainly decided by the fabric with the rougher surface. An estimating equation was also developed to predict the thermal resistance of multilayer fabrics and good correlation between predicted and experimental values was observed.

A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Power Conversion ◽  
Three Dimensional ◽  
Boost Converter ◽  
Switching Frequency ◽  
Power Module ◽  
Element Analysis ◽  
Switching Characteristics ◽  
Three Dimensional Finite Element

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.

scholarly journals Modelling Thermal Resistance of Power Modules Having Solder Voids With Finite Elements

1987 ◽  
Vol 12 (4) ◽  
pp. 239-250 ◽  
Author(s):  
R. A. Tatara
Keyword(s):  
Finite Element ◽  
Heat Conduction ◽  
Finite Elements ◽  
Thermal Resistance ◽  
Computer Program ◽  
Thermal Model ◽  
Three Dimensional ◽  
Power Module ◽  
Power Modules ◽  
Sample Case

A general thermal model to calculate the thermal resistance of a power module having rectangular die and layers has been constructed. The model incorporates a finite element computer program to solve for three-dimensional heat conduction. Effects of voids in the solder regions are included. A sample case is analyzed, and a comparison is made to a recent study.

The Finite Element Modeling and Analysis of Involute Spur Gear

2012 ◽  
Vol 516-517 ◽  
pp. 673-677 ◽  
Author(s):  
Shun Xu ◽  
Yan Zhang
Keyword(s):  
Finite Element ◽  
Mechanical Design ◽  
Three Dimensional ◽  
Spur Gear ◽  
Analysis Model ◽  
Element Analysis ◽  
Finite Element Analysis Model ◽  
Modeling And Analysis ◽  
Gear Mesh ◽  
Design Software

Through three-dimensional mechanical design software Pro/E to build a spur gear solid model, using ANSYS software for the gear mesh, as well as the constraints imposed by the most unfavorable load to determine the location of the discussion, in order to get accurate finite element analysis model. By analyzing, this shows that the effectiveness of the application of ANSYS in gear calculation.

scholarly journals Analysis and Mitigation of Stray Capacitance Effects in Resistive High-Voltage Dividers

Energies ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 2278
Author(s):  
Jordi-Roger Riba ◽  
Francesca Capelli ◽  
Manuel Moreno-Eguilaz
Keyword(s):  
High Voltage ◽  
Three Dimensional ◽  
Alternating Current ◽  
Stray Capacitance ◽  
Element Analysis ◽  
Wide Range ◽  
Resistive Divider ◽  
Dimensional Finite Element ◽  
Three Dimensional Finite Element ◽  
Capacitance Effects

This work analyzes the effects of the parasitic or stray distributed capacitance to ground in high-voltage environments and assesses the effectiveness of different corrective actions to minimize such effects. To this end, the stray capacitance of a 130 kV RMS high-voltage resistive divider is studied because it can severely influence the behavior of such devices when operating under alternating current or transient conditions. The stray capacitance is calculated by means of three-dimensional finite element analysis (FEA) simulations. Different laboratory experiments under direct current (DC) and alternating current (AC) supply are conducted to corroborate the theoretical findings, and different possibilities to mitigate stray capacitance effects are analyzed and discussed. The effects of the capacitance are important in applications, such as large electrical machines including transformers, motors, and generators or in high-voltage applications involving voltage dividers, conductors or insulator strings, among others. The paper also proves the usefulness of FEA simulations in predicting the stray capacitance, since they can deal with a wide range of configurations and allow determining the effectiveness of different corrective configurations.

Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Bi-directional Battery Chargers for Next Generation Hybrid Electric Vehicles

2012 ◽  
Vol 2012 (1) ◽  
pp. 001105-001115 ◽  
Author(s):  
Z. Cole ◽  
B. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Density ◽  
Hybrid Electric Vehicle ◽  
Peak Power ◽  
Mechanical Design ◽  
Next Generation ◽  
Power Module ◽  
Modeling And Analysis ◽  
Hybrid Electric

The packaging design and development of an on-board bi-directional charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger implements a multichip power module (MCPM) packaging strategy. The Silicon Carbide (SiC) MCPM charger is capable of operating to temperatures in excess of 200°C and at switching frequencies in excess of 500 kHz, significantly reducing the overall size and weight of the system in comparison with Toyota's present silicon-based Prius charger. The present actively cooled Si charger is capable of delivering a peak power of 1kW at less than 90 percent efficiency, is limited to less than 50 kHz switching, and measures greater than 6.3 liters with a mass of 6.6 kg, resulting in a power density of 150 W/kg. The passively cooled SiC MCPM charger presented herein was designed to deliver a peak power of 5 kW at greater than 96% efficiency, while measuring less than 0.9 liters with a mass of 1 kg, resulting in a power density greater than 5 kW/kg. Thus, the novel SiC MCPM charger represents an increase in power density of more than 30×, a very significant power density achievement in size and weight for sensitive mobile applications such as PHEVs. This paper will discuss the overall mechanical design of the SiC MCPM charger, the finite-element modeling and analysis of thermal and stress considerations, characterization and parasitic analysis of the MCPM, and the development of high temperature solutions for SiC devices.

Experimental Seismic Response of High-Voltage Transformer-Bushing Systems

2005 ◽  
Vol 21 (4) ◽  
pp. 1009-1025 ◽  
Author(s):  
Andre Filiatrault ◽  
Howard Matt
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Ground Motion ◽  
High Voltage ◽  
Three Dimensional ◽  
Element Model ◽  
Voltage Transformer ◽  
High Voltage Transformer ◽  
Rocking Motion ◽  
Three Dimensional Finite Element

This paper describes the shake table testing of a full-scale high-voltage electrical transformer-bushing system. The main objective of the study was to investigate the amplification between the ground motion and the motion at the base of the bushing under various ground-motion time histories and intensities. Another objective of the testing was to assess the predictions of a three-dimensional finite-element model of the transformer-bushing system. The experimental results obtained indicated that the rocking motion of the bushing and turret, facilitated by the top plate flexibility of the transformer, influenced significantly the dynamic characteristics of the bushing. The finite element model was able to predict absolute accelerations, relative displacements, and stress distributions in the systems with reasonable accuracy considering its complexity.

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