Integrated Connector for Silicon Photonic Co-package Optics with Strain Relief Accommodation Through Fiber Bending

Summary. Introduction: Visual fatigue is caused by changes in the muscular apparatus and retina of the eye and is characterized by deterioration in their functional activity. Along with an increase in work experience and age, workplace visual stress promotes the loss of performance. Known methods of visual fatigue prevention and eye strain relief are ineffective. In this regard, a technique of relieving visual fatigue using scattered low-level red laser radiation was developed and patented. The purpose of our study was a retrospective evaluation of effectiveness of the visual fatigue reduction technique. Materials and methods: We examined two groups of women (PC operators and jewellers) aged 43–57 years experiencing visual stress at work and practicing the method under study over the previous 20 years. The state of daylight vision was assessed by adaptation time. Results: A five-day testing of the method of visual fatigue relief showed stabilization of the light sensitivity threshold throughout the work shift. Over the 20-year period, the female workers had had no complaints of eye strain, burning or lacrimation. Objective studies of the functional state of the organ of sight showed that the light sensitivity threshold during the working day in two study groups was significantly lower than that in the control group with no preventive measures taken. Conclusions: We established that using the technique of eye strain relief based on a two-minute binocular exposure to red laser radiation with the power density of 2×10–7 W/cm2, a 5-day course every six months over the period of 20 years, helped retain retinal activity in terms of light sensitivity, thus preventing visual fatigue.

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Concept, design and verification of components for an integrated on-detector silicon photonic multichannel transmitter

10.22323/1.343.0057 ◽

2019 ◽

Author(s):

Yunlong Zhang ◽

Djorn Karnick ◽

Marc Schneider ◽

Lars Eisenblätter ◽

Thomas Kühner ◽

...

Keyword(s):

Concept Design ◽

Silicon Photonic

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Double-layer graphene on photonic crystal waveguide electro-absorption modulator with 12 GHz bandwidth

Nanophotonics ◽

10.1515/nanoph-2019-0381 ◽

2019 ◽

Vol 9 (8) ◽

pp. 2377-2385 ◽

Cited By ~ 4

Author(s):

Zhao Cheng ◽

Xiaolong Zhu ◽

Michael Galili ◽

Lars Hagedorn Frandsen ◽

Hao Hu ◽

...

Keyword(s):

Photonic Crystal ◽

Double Layer ◽

Slow Light ◽

Modulation Depth ◽

Photonic Crystal Waveguide ◽

Optical Modulators ◽

Layer Graphene ◽

Silicon Photonic ◽

On Chip ◽

Silicon Based

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.

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Polarization-transparent silicon photonic add-drop multiplexer with wideband hitless tuneability

Nature Communications ◽

10.1038/s41467-021-24640-5 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Francesco Morichetti ◽

Maziyar Milanizadeh ◽

Matteo Petrini ◽

Francesco Zanetto ◽

Giorgio Ferrari ◽

...

Keyword(s):

Optical Networks ◽

Communication Networks ◽

Bandwidth Allocation ◽

Core Networks ◽

Reconfigurable Devices ◽

Silicon Photonic ◽

Transmission Quality ◽

And Control ◽

Integrated Device ◽

Dynamic Bandwidth

AbstractFlexible optical networks require reconfigurable devices with operation on a wavelength range of several tens of nanometers, hitless tuneability (i.e. transparency to other channels during reconfiguration), and polarization independence. All these requirements have not been achieved yet in a single photonic integrated device and this is the reason why the potential of integrated photonics is still largely unexploited in the nodes of optical communication networks. Here we report on a fully-reconfigurable add-drop silicon photonic filter, which can be tuned well beyond the extended C-band (almost 100 nm) in a complete hitless (>35 dB channel isolation) and polarization transparent (1.2 dB polarization dependent loss) way. This achievement is the result of blended strategies applied to the design, calibration, tuning and control of the device. Transmission quality assessment on dual polarization 100 Gbit/s (QPSK) and 200 Gbit/s (16-QAM) signals demonstrates the suitability for dynamic bandwidth allocation in core networks, backhaul networks, intra- and inter-datacenter interconnects.

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Reconfigurable Fiber Wireless IFoF Fronthaul with 60 GHz Phased Array Antenna and Silicon Photonic ROADM for 5G mmWave C-RANs

IEEE Journal on Selected Areas in Communications ◽

10.1109/jsac.2021.3064649 ◽

2021 ◽

pp. 1-1

Author(s):

Apostolos Tsakyridis ◽

Eugenio Ruggeri ◽

George Kalfas ◽

Ruud M. Oldenbeuving ◽

Paul W. L. van Dijk ◽

...

Keyword(s):

Phased Array ◽

Array Antenna ◽

60 Ghz ◽

Phased Array Antenna ◽

Silicon Photonic

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Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽

10.1515/nanoph-2021-0007 ◽

2021 ◽

Vol 10 (6) ◽

pp. 1765-1773

Author(s):

Yi Zhang ◽

Jianfeng Gao ◽

Senbiao Qin ◽

Ming Cheng ◽

Kang Wang ◽

...

Keyword(s):

Energy Consumption ◽

Quantum Well ◽

Quantum Wells ◽

High Speed ◽

Low Voltage ◽

Extinction Ratio ◽

High Frequency Response ◽

Modulation Format ◽

Silicon Photonic ◽

Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

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Scaling capacity of fiber-optic transmission systems via silicon photonics

Nanophotonics ◽

10.1515/nanoph-2020-0309 ◽

2020 ◽

Vol 0 (0) ◽

Author(s):

Wei Shi ◽

Ye Tian ◽

Antoine Gervais

Keyword(s):

Silicon Photonics ◽

Communication Systems ◽

Large Scale ◽

Recent Progress ◽

Fiber Optic ◽

Rapid Evolution ◽

System Capacity ◽

Disruptive Technology ◽

System Perspective ◽

Silicon Photonic

AbstractThe tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.

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