Superconductors as very high-speed system-level interconnects

1987 ◽  
Vol 8 (12) ◽  
pp. 582-585 ◽  
Author(s):  
O.K. Kwon ◽  
B.W. Langley ◽  
R.F.W. Pease ◽  
M.R. Beasley
Keyword(s):  
2015 ◽  
Vol 2015 (1) ◽  
pp. 000761-000765
Author(s):  
James Rathburn

HSIO Technologies has developed several interconnect technologies that enable very high speed, fine pitch separable interconnect between a semiconductor package, flex cable or printed circuit assembly and a system level printed circuit board. In basic terms, connector technology has been produced that allows of direct socketing of the SoC, PoP, CPU, RF Module or Memory device directly in a mobile platform in an ultra-low profile interface that also extends to a ganged RF capable interface for flex cable and board to board applications. The technology revolves around matching very small metallic contacts with fusion bonded Liquid Crystal Polymer materials to create a high speed interface on very fine pitch. Applications to be detailed are socketing of mobile processors, memory devices, and RF modules directly in a cell phone handset, tablet and notebook computer. Emerging complexity with mobile platforms dictates that traditional methods of validating platform performance is not adequate with significant value in the ability to plug packaged IC devices into the actual consumer platform to validate silicon and performance. The paper will document the package substrate to connector interface as well as introduce very high performance connector and flex cable interconnects on 0.35 mm pitch area array for mobile, desktop, and server applications.


Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


Alloy Digest ◽  
2019 ◽  
Vol 68 (10) ◽  

Abstract YSS HAP72 is a powder metallurgy high-speed tool steel with a very high wear resistance. This datasheet provides information on composition, hardness, and bend strength. It also includes information on high temperature performance. Filing Code: TS-779. Producer or source: Hitachi Metals America Ltd.


1992 ◽  
Author(s):  
Timothy J. Salo ◽  
John D. Cavanaugh ◽  
Michael K. Spengler
Keyword(s):  

1994 ◽  
Vol 30 (6) ◽  
pp. 463-465 ◽  
Author(s):  
S.M. Clements ◽  
R.K. Cavin III ◽  
J. Kang ◽  
W. Liu

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