scholarly journals Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Materials ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 2896 ◽  
Author(s):  
Xinnan Huang ◽  
Yao Yao ◽  
Songang Peng ◽  
Dayong Zhang ◽  
Jingyuan Shi ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Interface States ◽  
Subthreshold Swing ◽  
Level Shift ◽  
Voltage Sweep ◽  
The Stability ◽  
Memory Applications

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2 FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2–SiO2 interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2 FET that is applied in the low power consumption devices and circuits.

Charge-Trapping Effects Caused by Ammonia in Carbon Nanotubes

2007 ◽  
Vol 7 (1) ◽  
pp. 335-338
Author(s):  
Hong Li ◽  
Qing Zhang ◽  
Ning Peng ◽  
Ningyi Liu ◽  
Yi Chau Lee ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Hysteretic Behavior ◽  
Ammonia Gas ◽  
Single Walled Carbon Nanotube ◽  
Adsorbed Ammonia ◽  
Additional Charge

Hysteretic behaviors caused by low-concentration ammonia gas are found in single-walled carbon nanotube based field-effect transistors. The transfer curves are found to shift towards negative gate voltage when the gate voltage is swept forwardly upon introducing ammonia. In contrast, no significant change in the transfer curves is observed for the backward sweeping of the gate voltage. This phenomenon is repeatable even after the devices are annealed in dry air at 200 °C for 2 hrs. Our findings can be interpreted in terms of additional charge traps induced by the adsorbed ammonia molecules. The observed hysteretic behavior enables the devices to work as memory cells, in which the carbon nanotube field-effect transistors act as readout and ammonia molecules play roles of charge storage.

Novel Multiplexer Design Using Multi-State Spatial Wavefunction-Switched (SWS) FETs

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1520011 ◽  
Author(s):  
Pial Mirdha ◽  
Murali Lingalugari ◽  
Evan K. Heller ◽  
John A. Chandy ◽  
Faquir C. Jain
Keyword(s):  
Quantum Wells ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Logic Device ◽  
Coupled Quantum Wells ◽  
Conduction Mode

In this paper, we propose a multiplexer design based on use of a twin channel and twin drain spatial wavefunction-switched field-effect transistors (SWSFETs). SWSFET comprises of vertically stacked coupled quantum wells devices, which are the channels, where depending on the gate voltage only one of the channels is in conduction mode. Using SWSFET in multi-channel and single drain configuration operates as a multi-valued logic device. 2:1 and 4:2 multiplexer designs are proposed which are compatible with current CMOS technology and with all SWSFET. Both designs lead to greater than 4X reduction in transistor count. Ngspice simulation of circuits is also presented.

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

2018 ◽  
Vol 30 (28) ◽  
pp. 1800932 ◽  
Author(s):  
Xingqiang Liu ◽  
Renrong Liang ◽  
Guoyun Gao ◽  
Caofeng Pan ◽  
Chunsheng Jiang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Swing ◽  
Negative Capacitance

scholarly journals Application of organic field-effect transistors in memory

2020 ◽  
Vol 4 (10) ◽  
pp. 2845-2862
Author(s):  
Zhiheng Zhu ◽  
Yunlong Guo ◽  
Yunqi Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Function ◽  
Organic Field Effect Transistors ◽  
Memory Mechanism ◽  
Memory Applications ◽  
With Memory

Functional organic field-effect transistors (OFETs) have developed rapidly, especially OFETs with memory function. We make a comprehensive summary of the background, memory mechanism, structure construction and memory applications based on OFETs.

Ferroelectric Field Effect Transistors for Memory Applications

2010 ◽  
Vol 22 (26-27) ◽  
pp. 2957-2961 ◽  
Author(s):  
Jason Hoffman ◽  
Xiao Pan ◽  
James W. Reiner ◽  
Fred J. Walker ◽  
J. P. Han ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Applications
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