A study on the bottom-gate ITO-stabilized ZnO thin-film transistors

2017 ◽  
Author(s):  
Wei Zhong ◽  
Guoyuan Li ◽  
Rongsheng Chen ◽  
Linfeng Lan ◽  
Xu Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Bottom Gate

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface

Coupling Top- and Bottom-Gate ZnO Thin Film Transistors for Low Voltage, High Gain Inverter

2010 ◽  
Vol 13 (6) ◽  
pp. H194 ◽  
Author(s):  
Min Suk Oh ◽  
Jeong In Han ◽  
Kimoon Lee ◽  
Byoung H. Lee ◽  
Myung M. Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
High Gain ◽  
Zno Thin Film ◽  
Bottom Gate

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

2012 ◽  
Vol 29 (1) ◽  
pp. 018501 ◽  
Author(s):  
Shao-Juan Li ◽  
Xin He ◽  
De-Dong Han ◽  
Lei Sun ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate
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