Combined subthreshold and gate-oxide leakage power reduction in deep-submicron CMOS Circuits

2005 ◽  
Author(s):  
R.S. Guindi
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
Power Reduction ◽  
Leakage Power ◽  
Cmos Circuits ◽  
Submicron Cmos

He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications

2001 ◽  
Vol 37 (12) ◽  
pp. 788 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Chien-Hao Chen ◽  
Chih-Wei Yang ◽  
Mo-Chiun Yu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Remote Plasma ◽  
Plasma Nitridation ◽  
Technology Applications ◽  
Submicron Cmos ◽  
Thin Gate Oxide

Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology

2008 ◽  
Vol 48 (11-12) ◽  
pp. 1786-1790 ◽  
Author(s):  
Y.T. Chiang ◽  
Y.K. Fang ◽  
Y.J. Huang ◽  
T.H. Chou ◽  
S.Y. Yeh ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Submicron Cmos

scholarly journals Review of Leakage Power Reduction in CMOS Circuits

2014 ◽  
Vol 2 (4) ◽  
pp. 133-136 ◽  
Author(s):  
Khushboo Kumari ◽  
Arun Agarwal ◽  
J Jayvrat ◽  
Kabita Agarwal
Keyword(s):  
Power Reduction ◽  
Leakage Power ◽  
Cmos Circuits
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