Integration of a novel, high quality Si/sub 3/N/sub 4/ metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50nm T-gate InP-HEMTs to realise monolithic millimetre-wave integrated circuits (MMMICs)

2005 ◽  
Author(s):  
K. Elgaid ◽  
H. McLelland ◽  
X. Cao ◽  
I.G. Thayne
Keyword(s):  
Integrated Circuits ◽  
Room Temperature ◽  
High Quality ◽  
Metal Insulator ◽  
Millimetre Wave ◽  
Metal Insulator Metal ◽  
Mim Capacitors

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

Plasmonic band-pass filter device using coupled asymmetric cross-shaped cavity

2017 ◽  
Vol 31 (01) ◽  
pp. 1750001 ◽  
Author(s):  
Xiao-Meng Geng ◽  
Si-Chen Mi ◽  
Tie-Jun Wang ◽  
Lin-Yan He ◽  
Chuan Wang
Keyword(s):  
Integrated Circuits ◽  
Fdtd Method ◽  
Optical Signal ◽  
Band Pass Filter ◽  
Peak Wavelength ◽  
Metal Insulator ◽  
Pass Filter ◽  
Metal Insulator Metal ◽  
Wavelength Filter ◽  
Band Pass

In this paper, a novel plasmonic band-pass filter by using the system consisting four waveguides and an asymmetric cross-shaped resonator is proposed. The plasmonic system is based on the metal–insulator–metal (MIM) structure which could overcome the diffraction limit and exhibit various promising applications. Here, we investigate the transmission spectra of the cross-shaped resonator by using finite-different-time-domain (FDTD) method and we find that the peak-wavelength on different ports show redshift or blueshift behaviors which are linearly changed with the length of cavity or the coupling distance. Moreover, the wavelength filter could be achieved and further applied in optical signal integrated circuits.

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

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