The Calcination Temperature Effect on the Phase Formation of the PZT Ceramic: How the same Calcination Temperature, Result in Different Phase’s Formation

2021 ◽  
Vol 406 ◽  
pp. 256-264
Author(s):  
Mohammed Mahdi ◽  
M. Kadri

First, the metallic oxides of PbO, TiO2 and ZrO2 were mixed following (2, 1, 1) molar mass respectively. Then 4 samples were separated (S1, S2, S3 and S4). the first one S1 was subjected to calcination treatments at 600, 700 and 800 °C however, the S2 was treated at 700 °C only, the S3 at 800 °C and S4 at 850 °C. The X ray diffraction of the samples reveals important difference in the phases obtained, at 600 °C the quadratic riche phase of PbTiO3 was mainly observed on sample S1, after the treatment at 700 °C and 800°C, the same XRD patterns were obtained with the same peaks positions and the relative intensity. However the S2 revels different pattern from S1 at 700 °C relative to the formation of the Pb(Zr0.75, Ti0.25)O3 Rhombohedral riche phase. The S3 XRD results reveal also different pattern from S1 at 800 °C relative to the formation of Pb (Zr0.58, Ti0.42) O3 near the Morphotropic phase boundary (MPB) and the S4 confirm these finding. Thin films grown from the S1 and S4 used as target in the RF sputtering system, show important difference in the PZT stoichiometry obtained which is relative to Pb (Zr0.44, Ti0.56) located in the quadratic riche phase and Pb (Zr0.52, Ti0.48) O3 near the MPB respectively.

Fibers ◽  
2019 ◽  
Vol 7 (5) ◽  
pp. 47 ◽  
Author(s):  
Miguel A. Rivero Crespo ◽  
Dolores Pereira Gómez ◽  
María V. Villa García ◽  
José M. Gallardo Amores ◽  
Vicente Sánchez Escribano

Serpentinite powdered samples from four different regions were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), SBET and porosity measurements, UV-Vis and Infrared Spectroscopy of the skeletal region and surface OH groups. SEM micrographs of the samples showed a prismatic morphology when the lizardite was the predominant phase, while if antigorite phase prevailed, the particles had a globular morphology. The few fibrous-shaped particles, only observed by SEM and weakly detected by XRD on MO-9C and MO13 samples, were characteristic of the chrysotile phase. All diffraction XRD patterns showed characteristic peaks of antigorite and lizardite serpentine phases, with crystallite sizes in the range 310–250 Å and with different degrees and types of carbonation processes, one derived from the transformation of the serpentine, generating dolomite, and another by direct precipitation of calcite. The SBET reached values between 38–24 m2∙g−1 for the samples less crystalline, in agreement with the XRD patterns, while those with a higher degree of crystallinity gave values close to 8–9 m2∙g−1. In the UV region all electronic spectra were dominated by the absorption edge due to O2− → Si4+ charge transfer transition, with Si4+ in tetrahedral coordination, corresponding to a band gap energy of ca 4.7 eV. In the visible region, 800–350 nm, the spectra of all samples, except Donai, presented at least two weak and broad absorptions centred in the range 650–800 and 550–360 nm, associated with the presence of Fe3+ ions from the oxidation of structural Fe2+ ions in the serpentinites ((MgxFe2+1−x)3Si2O5(OH)4). The relative intensity of the IR bands corresponding to the stretching modes of the OH’s groups indicated the prevalence of one of the two phases, antigorite or lizardite, in the serpentinites. We proposed that the different relative intensity of these bands could be considered as diagnostic to differentiate the predominance of these phases in serpentinites.


1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.


1989 ◽  
Vol 169 ◽  
Author(s):  
F.H. Garzon ◽  
J. G. Beery ◽  
D. K. Wilde ◽  
I. D. Raistrick

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.


1997 ◽  
Vol 475 ◽  
Author(s):  
H. Chatbi ◽  
M. Vergnat ◽  
J. F. Bobo ◽  
L. Hennet

ABSTRACTDifferent phases of FeN thin films and Fe/FeN multilayers were prepared by reactive rf sputtering. The release of nitrogen and the crystallographic transformations during annealing were monitored by thermal desorption spectrometry and X-ray diffraction experiments. Finally, the diffusivity of nitrogen in the γ-Fe4N phase was evaluated.


2014 ◽  
Vol 925 ◽  
pp. 469-473
Author(s):  
Poh Kok Ooi ◽  
Mohd Anas Ahmad ◽  
Sha Shiong Ng ◽  
Mat Johar Abdullah

In this work, structural, optical and electrical properties of nitrogen doped (N-doped) cupric oxide (CuO) thin films deposited on <100> orientated n-type silicon, glass and polyethylene terephthalate substrates using reactive radio frequency sputtering system were investigated. X-ray diffraction results revealed that all films exhibited monoclinic CuO(-111) and have only slightly different structural properties for various substrates. Field effect scanning electron microscopy shown N-doped CuO on Si and glass are denser than on PET substrates and all have nanotriangle-like structure morphologies. The N-doped CuO thin films have an indirect band gap of around 1.30 eV. The resistively, carrier concentration and hall mobility of the N-doped CuO thin film on glass were 1.05 kΩ.cm, 6.70 x 1014 cm-3 and 8.86 cm2/V-s respectively. Furthermore, palladium formed ohmic contact characteristics for N-doped CuO on glass and PET but exhibited schottky contact characteristics for N-doped CuO on Si.


1989 ◽  
Vol 03 (06) ◽  
pp. 465-470 ◽  
Author(s):  
MASAYUKI TSUKIOKA ◽  
TASUKU MASHIO ◽  
MASAJI SHIMAZU ◽  
TAKESHI NAKAMURA

Using rf-sputtering method, modified BNN ( Ba 2 NaNb 5 O 15) thin-films, which are highly aligned, were prepared on a polished surface of a stainless steel plate and on a polished silicon wafer. It was found that preferably aligned thin-films were successfully obtained only when modified Nb-rich BNN target was used. Preferable orientation of these thin-films was confirmed by X-ray diffraction measurement. In order to find the correlation between preferable orientation and separation from plasma center, X-ray measurement was carried out at several points on the thin-film sputtered on a long stainless steel substrate (5×100 mm ). The result indicated that preferable orientation was dominant near the position of plasma center. In order to distinguish whether the strong X-ray peak observed in the preferably aligned BNN thin-film is due to (200) peak of Nb 2 O 5 or (440) peak of BNN, X-ray measurements and the following quantitative analyses; fluorescent X-ray, ICP (Induced Coupled Radio Frequency Plasma) and an Atomic Absorption Method, were carried out for films sputtered from Nb-rich BNN target. The results reveal that the thin-films include considerable quantity of barium and sodium. This suggests that the highly aligned thin-film is composed of modified BNN and not Nb 2 O 5.


2006 ◽  
Vol 514-516 ◽  
pp. 23-27
Author(s):  
V. Thaiyalnayaki ◽  
M.Fátima Cerqueira ◽  
Francisco Macedo ◽  
João Alves Ferreira

Amorphous and nanocrystalline silicon thin films have been produced by reactive r.f. sputtering and their microstructure, optical and thermal properties were evaluated. A good correlation was found between the microstructure determined by Raman spectroscopy and X- ray diffraction and the thermal transport parameters.


1990 ◽  
Vol 181 ◽  
Author(s):  
L. E. Halperin ◽  
E. Kolawa ◽  
Z. Fu ◽  
M-A. Nicolet

ABSTRACTThe chemical stability of boride thin films with aluminum is investigated. Only two diborides, VB2 and HfB2 have a positive heat of reaction which makes them potential candidates for thermodynamically stable diffusion barriers between Al and Si. Thin films of VB2, and ZrB2 for comparison, prepared by rf sputtering of composite targets were chosen for this study. Multilayer samples of these borides and aluminum were investigated by differential scanning calorimetry to determine if, according to calculations, a reaction between Al and the borides takes place, and to measure the heat of reaction. We find that an exothermic chemical reaction occurs between ZrB2 and Al and that an exothermic crystallization reaction takes place in the VB2 and Al sample. The reaction products were determined using X-ray diffraction.


RSC Advances ◽  
2017 ◽  
Vol 7 (36) ◽  
pp. 22094-22104 ◽  
Author(s):  
Ehsan Mohammadpour ◽  
Zhong-Tao Jiang ◽  
Mohmmednoor Altarawneh ◽  
Nicholas Mondinos ◽  
M. Mahbubur Rahman ◽  
...  

Cr1−xAlxN coatings, synthesised by an unbalanced magnetic sputtering system, showed improved microstructure and mechanical properties for ∼14–21% Al content.


Author(s):  
Fatma Salamon

CdS thin films were prepared by chemical bath deposition technique (CBD) onto the glass substrates at different conditions of preparation. The obtained samples are studied by X-Ray diffraction (XRD). The XRD patterns of CdS samples revealed the formation with a hexagonal crystal structure P36mc, and the clear effect of the concentration of thiourea, cadmium sulfide, NaOH, time and temperature deposition, and annealing temperature, on the structure of the prepared thin films. through the study, we found that the samples have preferred orientation along [002], also the thickness of thin films decrease with deposition time after certain value, with the appearance of free cadmium. It has been found that the 200°C is the best temperature for annealing to improve the other structural and physical properties of films.


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