Triple-threshold-voltage 9-transistor SRAM cell for data stability and energy-efficiency at ultra-low power supply voltages

2014 ◽  
Author(s):  
Hong Zhu ◽  
Volkan Kursun
Keyword(s):  
Energy Efficiency ◽  
Low Power ◽  
Threshold Voltage ◽  
Power Supply ◽  
Ultra Low Power ◽  
Sram Cell ◽  
Supply Voltages

scholarly journals Stability analysis of Sub-threshold 6T SRAM cell at 45 nm for IoT application

2019 ◽  
Vol 8 (2) ◽  
pp. 2434-2438
Keyword(s):  
Stability Analysis ◽  
Low Power ◽  
Threshold Voltage ◽  
Supply Voltage ◽  
Stability Parameter ◽  
Threshold Region ◽  
Ultra Low Power ◽  
Noise Margin ◽  
Sram Cell ◽  
Power Application

In ultra-Low power application the supply volt- age in the circuit is as minimum as possible to correct perform the operation. Reducing the supply voltage below the threshold Voltage of transistor is known as sub threshold voltage that affects the delay as well as stability parameter of the Circuit. In this paper body biased technique is applied at standard 6T SRAM which improve the static Current Noise Margin(SINM) and Write trip Current by the factor of 4.15 times and 4.7 times respectively from the Conventional (conv) 6T SRAM. SINM defined the read stability whereas WTI are write ability Parameters of the circuit. In the Sub threshold region delay parameter of the circuit increased, but in this paper delay and power of the proposed circuit are going to be degrades 2.34 times and 4.39 times from the conv. 6T SRAM at different Process Corner i.e. the Performance of the device get increased. In this paper conventional (Conv.)6T and Proposed(PP) 6T both have same W/L ratio at supply voltage of 400mv

An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques

2015 ◽  
Vol 35 (5) ◽  
pp. 1437-1455 ◽  
Author(s):  
Majid Moghaddam ◽  
Somayeh Timarchi ◽  
Mohammad Hossein Moaiyeri ◽  
Mohammad Eshghi
Keyword(s):  
Low Power ◽  
Threshold Voltage ◽  
Ultra Low Power ◽  
Sram Cell

scholarly journals Ultra-Low Power CMOS Readout for Resonant MEMS Strain Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  
Keyword(s):  
Low Power ◽  
Power Supply ◽  
First Generation ◽  
Negative Resistance ◽  
Low Noise ◽  
Strain Sensors ◽  
Current Conveyors ◽  
Ultra Low Power ◽  
Active Elements ◽  
Low Power Cmos

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.

Ultra Low Power 6T SRAM Cell Designed on 65nm Low Power Technology Platform Suitable for High Temperature Applications

2013 ◽  
Vol 52 (1) ◽  
pp. 99-103 ◽  
Author(s):  
L. Jinhua ◽  
J. Zhou ◽  
A. Zhou ◽  
J. Chen ◽  
S. Huang ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Ultra Low Power ◽  
Technology Platform ◽  
Sram Cell ◽  
Temperature Applications
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