Ultra-Low-Power Low Drop-Out (LDO) Voltage Regulator With Improved Power Supply Rejection

Author(s):  
Hazem H. Hammam ◽  
Hesham A. Omran ◽  
Sameh A. Ibrahim
2012 ◽  
Vol 12 (3) ◽  
pp. 313-319 ◽  
Author(s):  
Ho-Joon Jang ◽  
Yong-Seong Roh ◽  
Young-Jin Moon ◽  
Jeong-Pyo Park ◽  
Chang-Sik Yoo

2011 ◽  
Vol 47 (20) ◽  
pp. 1117 ◽  
Author(s):  
T. Coulot ◽  
E. Rouat ◽  
J.-M. Fournier ◽  
E. Lauga ◽  
F. Hasbani

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 973
Author(s):  
Marco Crescentini ◽  
Cinzia Tamburini ◽  
Luca Belsito ◽  
Aldo Romani ◽  
Alberto Roncaglia ◽  
...  

This paper presents an ultra-low power, silicon-integrated readout for resonant MEMS strain sensors. The analogue readout implements a negative-resistance amplifier based on first-generation current conveyors (CCI) that, thanks to the reduced number of active elements, targets both low-power and low-noise. A prototype of the circuit was implemented in a 0.18-µm technology occupying less than 0.4 mm2 and consuming only 9 µA from the 1.8-V power supply. The prototype was earliest tested by connecting it to a resonant MEMS strain resonator.


2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Yue Shi ◽  
Anqi Wang ◽  
Jianwen Cao ◽  
Zekun Zhou

AbstractA high-stability voltage regulator (VR) is proposed in this paper, which integrates transient enhancement and overcurrent protection (OCP). Taken into consideration the performance and area advantages of low-voltage devices, most control parts of proposed VR are supplied by the regulated output voltage, which forms self-power technique (SPT) with power supply rejection (PSR) boosting. Besides, the stability and transient response are enhanced by dynamic load technique (DLT). An embedded overcurrent feedback loop is also adopted to protect the presented VR from damage under overload situations. The proposed VR is implemented in a standard 350 nm BCD technology, whose results indicate the VR can steadily work with 5.5–30 V input voltage, 0–30 mA load range, and 0.1–3.3 μF output capacitor. A 2.98 μV/V line regulation and a 0.233 mV/mA load regulation are achieved with a 40 mA current limiting. The PSR is better than − 64 dB up to 10 MHz with a 0.1 μF output capacitor.


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