Random telegraph noise induced drain-current fluctuation during dynamic gate bias in Si MOSFETs

2013 ◽  
Author(s):  
W. Feng ◽  
K. Yamada ◽  
K. Ohmori
Keyword(s):  
Drain Current ◽  
Gate Bias ◽  
Random Telegraph Noise ◽  
Current Fluctuation ◽  
Telegraph Noise

scholarly journals Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

2014 ◽  
Vol 35 (1) ◽  
pp. 3-5 ◽  
Author(s):  
Wei Feng ◽  
Chun Meng Dou ◽  
Masaaki Niwa ◽  
Keisaku Yamada ◽  
Kenji Ohmori
Keyword(s):  
Drain Current ◽  
Gate Bias ◽  
Random Telegraph Noise ◽  
Current Fluctuation ◽  
Telegraph Noise

Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FF08
Author(s):  
Shinya Ichino ◽  
Takezo Mawaki ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Hyeonwoo Park ◽  
...  
Keyword(s):  
Drain Current ◽  
Low Noise ◽  
Image Sensors ◽  
Random Telegraph Noise ◽  
Cmos Image Sensors ◽  
Telegraph Noise

scholarly journals An Electric-Based Model for Coupling Traps Effect on Random Telegraph Noise

2020 ◽  
Vol 15 (2) ◽  
pp. 1-4
Author(s):  
Thales Exenberger Becker ◽  
Pedro Augusto Böckmann Alves ◽  
Eduardo Pellin Moser ◽  
Gilson Inácio Wirth
Keyword(s):  
Coupling Effect ◽  
Current Amplitude ◽  
Random Telegraph Noise ◽  
Current Fluctuation ◽  
Telegraph Noise ◽  
Traps Effect ◽  
Over Time ◽  
Model Fits

In this work, we present a novel understanding about the anomalous Random Telegraph Noise (aRTN), asserting the existence of coupling effect among multiple traps regarding current amplitude deviation. Based on the examination in the literature of anomalous current fluctuation, we propose a model able to describe the equivalent filament resistance changes due to this process. Notwithstanding, the results obtained with our model fits with experimental current over time observations presented on literature. Given that RTN is still a concern for different technologies, such as MOSFETs, FinFets and ReRAMs, the model can be applied to understanding the dynamics of filament distribution and the trapping de-trapping activity.

Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory

2015 ◽  
Vol 36 (1) ◽  
pp. 26-28 ◽  
Author(s):  
Xiaonan Yang ◽  
Zhiwei Zheng ◽  
Yan Wang ◽  
Zongliang Huo ◽  
Lei Jin ◽  
...  
Keyword(s):  
Flash Memory ◽  
Gate Bias ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Nor Flash

Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current

2011 ◽  
Vol 58 (5(2)) ◽  
pp. 1518-1521 ◽  
Author(s):  
Heung-Jae Cho ◽  
Younghwan Son ◽  
Sanghoon Lee ◽  
Jong-Ho Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Gate Oxide ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Oxide Trap ◽  
Thin Gate Oxide
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