The effect of in-situ ozone annealing per cycle on Al2O3 gate dielectric deposited by atomic layer deposition using TMA and H2O for InGaAs MOS capacitor
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2018 ◽
Vol 924
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pp. 490-493
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2009 ◽
Vol 156
(8)
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pp. G109
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2009 ◽
Vol 113
(19)
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pp. 8249-8257
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2018 ◽
Vol 89
(12)
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pp. 123702
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