Low-cost vertical coupling schemes for optical I/Os and 3D integration in CMOS photonic integrated circuits

Author(s):  
Dimitris Tsiokos ◽  
George Dabos ◽  
Jens Bolten ◽  
Nikos Pleros
Author(s):  
R. Santos ◽  
D. D’Agostino ◽  
F. M. Soares ◽  
H. Rabbani Haghighi ◽  
M. K. Smit ◽  
...  

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-27 ◽  
Author(s):  
Zhou Fang ◽  
Ce Zhou Zhao

With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.


2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Jiaqi Wang ◽  
Zhenzhou Cheng ◽  
Xuejin Li

Graphene, a single layer of carbon atoms arranged in the form of hexagonal lattice, has many intriguing optical and electrical properties. However, due to the atomic layer thickness, light-matter interactions in the monolayer graphene are naturally weak when the light is normally incident to the material. To overcome this challenge, waveguide-integrated graphene optoelectronic devices have been proposed and demonstrated. In such coplanar configurations, the propagating light in the waveguide can significantly interact with the graphene layer integrated on the surface of the waveguide. The combination of photonic integrated circuits and graphene also enables the development of graphene devices by using silicon photonic technology, which greatly extends the scope of graphene’s application. Moreover, the waveguide-integrated graphene devices are fully CMOS-compatible, which makes it possible to achieve low-cost and high-density integration in the future. As a result, the area has been attracting more and more attention in recent years. In this paper, we introduce basic principles and research advances of waveguide-integrated graphene optoelectronics.


2021 ◽  
Vol 12 (1) ◽  
pp. 263
Author(s):  
Claire Besancon ◽  
Delphine Néel ◽  
Dalila Make ◽  
Joan Manel Ramírez ◽  
Giancarlo Cerulo ◽  
...  

The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.


2020 ◽  
Vol 10 (4) ◽  
pp. 1538 ◽  
Author(s):  
Xin Mu ◽  
Sailong Wu ◽  
Lirong Cheng ◽  
H.Y. Fu

Silicon photonics has drawn increasing attention in the past few decades and is a promising key technology for future daily applications due to its various merits including ultra-low cost, high integration density owing to the high refractive index of silicon, and compatibility with current semiconductor fabrication process. Optical interconnects is an important issue in silicon photonic integrated circuits for transmitting light, and fiber-to-chip optical interconnects is vital in application scenarios such as data centers and optical transmission systems. There are mainly two categories of fiber-to-chip optical coupling: off-plane coupling and in-plane coupling. Grating couplers work under the former category, while edge couplers function as in-plane coupling. In this paper, we mainly focus on edge couplers in silicon photonic integrated circuits. We deliver an introduction to the research background, operation mechanisms, and design principles of silicon photonic edge couplers. The state-of-the-art of edge couplers is reviewed according to the different structural configurations of the device, while identifying the performance, fabrication feasibility, and applications. In addition, a brief comparison between edge couplers and grating couplers is conducted. Packaging issues are also discussed, and several prospective techniques for further improvements of edge couplers are proposed.


2014 ◽  
Vol 2014 (DPC) ◽  
pp. 002057-002086 ◽  
Author(s):  
Yann Lamy ◽  
Haykel Ben Jamaa ◽  
Hughes Metras ◽  
Stéphane Bernabé ◽  
Sylvie Menezo ◽  
...  

The large internet companies' investments indicate an ongoing increase of data-based business volume through the next decades with the rise of the internet of things and the continuous growth of communication and data facilities. The two-figure yearly growth rate of exchanged data volume within data centers is challenging the actual short distance communication paradigms. With datacenter architectures getting larger and “flatter”, the availability of high bandwidth, low power and low cost optical links ranging from less than 1 meter to 1 kilometer is a key issue. It is therefore expected that today's 10 Gb/s transceiver data rate soon increase to 28Gb/s, 40 Gb/s and beyond. For such a channel bandwidth, the copper-based wires are no longer suitable in terms of cost, power and bandwidth density. Optical interconnects are expected to replace copper for short distances below 500 m and down to 1 m within servers and between servers of the same data center. They exhibit much higher scalability and flexibility in terms of bandwidth, reach and lower energy consumption down to 1 pJ/b and below. The integration of optical transceivers close to the computational logic is therefore becoming more and more attractive. The enabling technology for optical interconnect is silicon photonics which is maturing and leveraging the well-established knowledge coming from silicon technology. We today have a complete set of silicon photonics technology modules that cover passive components including multiplexers/demultiplexers, coupling functions, photodetectors, modulators and integrated laser sources. Given the constraints coming from the supply chain, we consider a heterogeneous integration of the photonics (PIC) and the electrical integrated circuits (EIC) within a single package, differentiating from a co-integration of both of them on a single die demonstrated in the past, which is not a viable nor scalable option from the economical point of view. Thereby we leverage our expertise in the 3D integration field, and we use a full set of mature technology modules including through-silicon vias (TSV), wafer thinning and micro-bumping. These modules have only been used in the past within electrical circuits, but their implantation in photonics chips has no showstoppers. The 3D integration enables a stacking of the electrical drivers in the EIC die on top of the photodiodes and modulators in the PIC die. The small micro-bump size reduces the parasitic capacitances and enables an optimized electro-optical co-design. The TSV enable the connection of the stack with the rest of the package and to the second-level interconnect with low inductive losses, thus boosting the system performance. The advanced 3D packaging technique also enables the alignment and attachment of the optical fibers using silicon micro-ferrules. Today's active alignment techniques for optical coupling are time-consuming and expensive, and not compatible with usual micro-electronics techniques. The ongoing development of silicon micro-ferrules with mechanical micro-bumps enables a compatible assembly of the optical plugs with the remaining system and a quick assembly process with standard pick-and-place equipment. The paper will introduce today's system demand in the data base market and its translation into technology requirements. It will then survey our silicon photonics technology modules and actual demonstrations. We will then introduce the packaging constraints and the impact of 3D integration on the system assembly. Finally, we will present our advances in terms of packaging of optical micro-connectors.


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