Micro photonic integrated circuits for low-cost optical systems

2004 ◽  
Author(s):  
W.S. Ishak
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
Optical Systems

scholarly journals Recent Progress in Silicon Photonics: A Review

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-27 ◽  
Author(s):  
Zhou Fang ◽  
Ce Zhou Zhao
Keyword(s):  
Integrated Circuits ◽  
Silicon Photonics ◽  
Recent Progress ◽  
State Of The Art ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
High Data ◽  
Bandwidth Requirement ◽  
Rate Transmission ◽  
Data Rate Transmission

With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.

scholarly journals Progress on Waveguide-Integrated Graphene Optoelectronics

2018 ◽  
Vol 2018 ◽  
pp. 1-9 ◽  
Author(s):  
Jiaqi Wang ◽  
Zhenzhou Cheng ◽  
Xuejin Li
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
Hexagonal Lattice ◽  
Single Layer ◽  
Atomic Layer ◽  
Monolayer Graphene ◽  
Basic Principles ◽  
Silicon Photonic ◽  
Graphene Devices

Graphene, a single layer of carbon atoms arranged in the form of hexagonal lattice, has many intriguing optical and electrical properties. However, due to the atomic layer thickness, light-matter interactions in the monolayer graphene are naturally weak when the light is normally incident to the material. To overcome this challenge, waveguide-integrated graphene optoelectronic devices have been proposed and demonstrated. In such coplanar configurations, the propagating light in the waveguide can significantly interact with the graphene layer integrated on the surface of the waveguide. The combination of photonic integrated circuits and graphene also enables the development of graphene devices by using silicon photonic technology, which greatly extends the scope of graphene’s application. Moreover, the waveguide-integrated graphene devices are fully CMOS-compatible, which makes it possible to achieve low-cost and high-density integration in the future. As a result, the area has been attracting more and more attention in recent years. In this paper, we introduce basic principles and research advances of waveguide-integrated graphene optoelectronics.

scholarly journals AlGaInAs Multi-Quantum Well Lasers on Silicon-on-Insulator Photonic Integrated Circuits Based on InP-Seed-Bonding and Epitaxial Regrowth

2021 ◽  
Vol 12 (1) ◽  
pp. 263
Author(s):  
Claire Besancon ◽  
Delphine Néel ◽  
Dalila Make ◽  
Joan Manel Ramírez ◽  
Giancarlo Cerulo ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
Thermal Strain ◽  
Laser Source ◽  
Integration Scheme ◽  
Growth Step ◽  
Si Photonics ◽  
Epitaxial Regrowth ◽  
Laser Sources

The tremendous demand for low-cost, low-consumption and high-capacity optical transmitters in data centers challenges the current InP-photonics platform. The use of silicon (Si) photonics platform to fabricate photonic integrated circuits (PICs) is a promising approach for low-cost large-scale fabrication considering the CMOS-technology maturity and scalability. However, Si itself cannot provide an efficient emitting light source due to its indirect bandgap. Therefore, the integration of III-V semiconductors on Si wafers allows us to benefit from the III-V emitting properties combined with benefits offered by the Si photonics platform. Direct epitaxy of InP-based materials on 300 mm Si wafers is the most promising approach to reduce the costs. However, the differences between InP and Si in terms of lattice mismatch, thermal coefficients and polarity inducing defects are challenging issues to overcome. III-V/Si hetero-integration platform by wafer-bonding is the most mature integration scheme. However, no additional epitaxial regrowth steps are implemented after the bonding step. Considering the much larger epitaxial toolkit available in the conventional monolithic InP platform, where several epitaxial steps are often implemented, this represents a significant limitation. In this paper, we review an advanced integration scheme of AlGaInAs-based laser sources on Si wafers by bonding a thin InP seed on which further regrowth steps are implemented. A 3 µm-thick AlGaInAs-based MutiQuantum Wells (MQW) laser structure was grown onto on InP-SiO2/Si (InPoSi) wafer and compared to the same structure grown on InP wafer as a reference. The 400 ppm thermal strain on the structure grown on InPoSi, induced by the difference of coefficient of thermal expansion between InP and Si, was assessed at growth temperature. We also showed that this structure demonstrates laser performance similar to the ones obtained for the same structure grown on InP. Therefore, no material degradation was observed in spite of the thermal strain. Then, we developed the Selective Area Growth (SAG) technique to grow multi-wavelength laser sources from a single growth step on InPoSi. A 155 nm-wide spectral range from 1515 nm to 1670 nm was achieved. Furthermore, an AlGaInAs MQW-based laser source was successfully grown on InP-SOI wafers and efficiently coupled to Si-photonic DBR cavities. Altogether, the regrowth on InP-SOI wafers holds great promises to combine the best from the III-V monolithic platform combined with the possibilities offered by the Si photonics circuitry via efficient light-coupling.

scholarly journals Edge Couplers in Silicon Photonic Integrated Circuits: A Review

2020 ◽  
Vol 10 (4) ◽  
pp. 1538 ◽  
Author(s):  
Xin Mu ◽  
Sailong Wu ◽  
Lirong Cheng ◽  
H.Y. Fu
Keyword(s):  
Integrated Circuits ◽  
Optical Interconnects ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
High Refractive Index ◽  
Grating Couplers ◽  
Integration Density ◽  
Silicon Photonic ◽  
Optical Transmission Systems ◽  
Structural Configurations

Silicon photonics has drawn increasing attention in the past few decades and is a promising key technology for future daily applications due to its various merits including ultra-low cost, high integration density owing to the high refractive index of silicon, and compatibility with current semiconductor fabrication process. Optical interconnects is an important issue in silicon photonic integrated circuits for transmitting light, and fiber-to-chip optical interconnects is vital in application scenarios such as data centers and optical transmission systems. There are mainly two categories of fiber-to-chip optical coupling: off-plane coupling and in-plane coupling. Grating couplers work under the former category, while edge couplers function as in-plane coupling. In this paper, we mainly focus on edge couplers in silicon photonic integrated circuits. We deliver an introduction to the research background, operation mechanisms, and design principles of silicon photonic edge couplers. The state-of-the-art of edge couplers is reviewed according to the different structural configurations of the device, while identifying the performance, fabrication feasibility, and applications. In addition, a brief comparison between edge couplers and grating couplers is conducted. Packaging issues are also discussed, and several prospective techniques for further improvements of edge couplers are proposed.

scholarly journals Heteroepitaxial Growth of III-V Semiconductors on Silicon

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1163
Author(s):  
Jae-Seong Park ◽  
Mingchu Tang ◽  
Siming Chen ◽  
Huiyun Liu
Keyword(s):  
Integrated Circuits ◽  
Coefficient Of Thermal Expansion ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
Monolithic Integration ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Si Substrates ◽  
Potential Benefits ◽  
Future Direction

Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

scholarly journals Feasibility of Telecom-Wavelength Photonic Integrated Circuits for Gas Sensors

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2870 ◽  
Author(s):  
Andreas Hänsel ◽  
Martijn Heck
Keyword(s):  
Integrated Circuits ◽  
Gas Sensors ◽  
Optical Sensors ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
Great Cost ◽  
Multiple Devices ◽  
Small Footprint ◽  
Ammonia Sensors ◽  
Cost Scaling

To be of commercial interest, gas sensors must optimise, among others, sensitivity, selectivity, longevity, cost and measurement speed. Using the example of ammonia, we establish that integrated optical sensors provide means to maintain the benefits of optical detection set-ups at, in principle, a lower cost and smaller footprint than currently available commercial products. Photonic integrated circuits (PICs) can be used in environmental and agricultural monitoring. The small footprint and great cost scaling of PICs allow for sensor networks with multiple devices. We show, that Indium Phosphide based commercial foundries reached the technological maturity to enable ammonia detection levels at less than 100 ppb. The current unavailability of portable, low cost ammonia sensors with such detection levels prevents emission monitoring, for example, in pig farms. The feasibility of these sensors is investigated by applying the common noise figures of the multiproject wafer platforms operating around 1550 nm to a model for an absorption measurement. The analysis is extended to other relevant gas species with absorption features near telecom-wavelengths.

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