Common emitter current gain degradation of silicon NPN transistors

1963 ◽  
Author(s):  
K.D. Kang
Keyword(s):  
Current Gain ◽  
Emitter Current

scholarly journals Minimum dropout voltage on a serial pnp transistor of a moderately loaded voltage regulator in a gamma radiation field

2012 ◽  
Vol 27 (4) ◽  
pp. 333-340 ◽  
Author(s):  
Vladimir Vukic
Keyword(s):  
Integrated Circuit ◽  
High Current Density ◽  
Negative Influence ◽  
Radiation Hardness ◽  
Voltage Regulators ◽  
Current Gain ◽  
Voltage Regulator ◽  
Emitter Current ◽  
Moderate Load ◽  
Loaded Voltage

The main examined value in an experiment performed on moderately loaded voltage regulators was the serial pnp transistor?s minimum dropout voltage, followed by the data on the base current and forward emitter current gain. Minimum dropout voltage decreased by up to 12%, while the measured values of the forward emitter current gain decreased by 20-40% after the absorption of a total ionizing dose of 500 Gy. The oxide trapped charge increased the radiation tolerance of the serial lateral pnp transistor owing to the suppression of interface trap formation above the base area. Current flow through the serial transistor of the voltage regulator had an influence on the decrease in the power pnp transistor?s forward emitter current gain. Due to the operation with a moderate load of 100 mA, loss of emitter injection efficiency was not as important as during the operation with high current density, thus eliminating the negative influence of emitter crowding on the radiation hardness of the voltage regulator. For a moderate load, gain in the negative feedback reaction was enough to keep output voltage in the anticipated range. Only information procured from tests of the minimum dropout voltage on the moderately loaded voltage regulators were not sufficient for unequivocal determination of the examined integrated circuit?s radiation hardness.

Hot Electron Transistors Using Si/CoSi2

1987 ◽  
Vol 102 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar
Keyword(s):  
Current Gain ◽  
Material System ◽  
Hot Electron ◽  
Metal Base ◽  
Emitter Current ◽  
Recent Advances ◽  
Electron Transistors

ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

2008 ◽  
Vol 600-603 ◽  
pp. 1159-1162 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Albert A. Burk ◽  
Craig Capell ◽  
Jonathan Young ◽  
...  
Keyword(s):  
High Temperatures ◽  
Breakdown Voltage ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Emitter Current ◽  
Wide Range ◽  
Operating Temperatures ◽  
A Current

4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVCBO) of 1150 V, and an open base breakdown voltage (BVCEO) of 250 V. A low specific on-resistance of 3.6 mW-cm2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.

Effects of Electrical Stress and High-Energy Electron Irradiation on the InGaP/GaAs Heterojunction Phototransistor

2015 ◽  
Vol 1792 ◽  
Author(s):  
Phuc Hong Than ◽  
Kazuo Uchida ◽  
Takahiro Makino ◽  
Takeshi Ohshima ◽  
Shinji Nozaki
Keyword(s):  
Electron Irradiation ◽  
Room Temperature ◽  
High Energy ◽  
Energy Electron ◽  
Current Gain ◽  
Related Phenomenon ◽  
High Energy Electron ◽  
Collector Current ◽  
Emitter Current ◽  
Electrical Stress

ABSTRACTIn this paper, we discuss the characteristics of the InGaP/GaAs heterojunction phototransistors (HPTs) before and after the electrical stress at room temperature and assess the effectiveness of the emitter-ledge passivation. Although an electrical stress given to the phototransistors by keeping a collector current density of 37 A/cm2 for 1 hour at room temperature was too small to affect the room-temperature common-emitter current gain and photocurrent of both HPTs with and without the emitter-ledge passivation, they showed a significant decrease at 420 K due to the room-temperature electrical stress. Nevertheless, the room-temperature common-emitter current gain and photocurrent of the HPT with the emitter-ledge passivation were still higher than those of the HPT without the emitter-ledge passivation. The effectiveness of the emitter-ledge passivation against the electrical stress was more significant than that on the current gain in the dark. In addition to the electrical stress experiment, for a potential application of the InGaP/GaAs HPTs in space, we will irradiate the HPTs with 1-MeV electrons at the Japan Atomic Energy Agency. Both current gain and photocurrent decreased significantly after the electron irradiation. In contrast to the electrical stress, the damage due to the high-energy electron irradiation is a bulk-related phenomenon, and the emitter-ledge passivation does not seem to suppress the degradation.

Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yuki Watabe ◽  
Taku Tajima ◽  
Tohru Nakamura
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Emitter Current ◽  
Bandgap Narrowing ◽  
Junction Transistor ◽  
The Common ◽  
Good Agreement ◽  
Ion Implanted

AbstractDegradation of current gain for ion implanted 4H-SiC bipolar junction transistor is described. The influence of bandgap-narrowing to the collector and base currents of the transistor was investigated using ISE-TCAD simulator. Simulated results show good agreement with the measured results, which show that the common emitter current gain of 3.9 is obtained at a maximum base concentration of 2×1017/cm3 and a maximum emitter concentration of 4×1019/cm3 for ion implanted 4H-SiC BJTs.

Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures For High Speed Circuit Applications

1997 ◽  
Vol 483 ◽  
Author(s):  
R.F. Kopf ◽  
R.A. Hamm ◽  
R.J. Malik ◽  
R.W. Ryan ◽  
J. Burm ◽  
...  
Keyword(s):  
High Speed ◽  
Base Layer ◽  
Current Gain ◽  
Emitter Current ◽  
Ecr Plasma ◽  
Device Reliability ◽  
Wet Chemical ◽  
P Type ◽  
Improve Device ◽  
Current Blocking

AbstractWe have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8V to IOV, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90kA/cm2 and a collector bias, VCE, of 2V at room temperature for over 500 hours. Typical common emitter current gain was 50. An ft of 80 and fmax of 155 GHz were achieved for 2 × 4 μm2 emitter size devices.

Sign in / Sign up

Export Citation Format

Share Document