Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs
2011 ◽
Vol 11
(2)
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pp. 290-294
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1999 ◽
Vol 46
(2)
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pp. 342-347
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1999 ◽
Vol 14
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pp. 892-896
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2021 ◽
Vol 68
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pp. 2220-2225