Vertical In0.7Ga0.3As nanowire surrounding-gate transistors with high-k gate dielectric on Si substrate

Author(s):  
Katsuhiro Tomioka ◽  
Masatoshi Yoshimura ◽  
Takashi Fukui
2002 ◽  
Vol 303 (1) ◽  
pp. 54-63 ◽  
Author(s):  
P.S. Lysaght ◽  
P.J. Chen ◽  
R. Bergmann ◽  
T. Messina ◽  
R.W. Murto ◽  
...  

2012 ◽  
Vol 7 (1) ◽  
pp. 431 ◽  
Author(s):  
Szu-Hung Chen ◽  
Wen-Shiang Liao ◽  
Hsin-Chia Yang ◽  
Shea-Jue Wang ◽  
Yue-Gie Liaw ◽  
...  

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