A high performance and reliable low-k inter-metal dielectric using hydrogen silsesquioxane (HSQ)

2003 ◽  
Author(s):  
Y.Y. Cheng ◽  
S.M. Jang ◽  
C.H. Yu ◽  
S.C. Sun ◽  
M.S. Liang
Keyword(s):  
High Performance ◽  
Hydrogen Silsesquioxane ◽  
Low K

High-performance intrinsic low-k polymer via the synergistic effect of its three units: adamantyl, perfluorocyclobutylidene and benzocyclobutene

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68560-68567 ◽  
Author(s):  
Lingqiang Kong ◽  
Tianke Qi ◽  
Zhidong Ren ◽  
Yunxia Jin ◽  
Yan Li ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
High Performance ◽  
Low K

Intrinsic highly cross-linked low-k benzocyclobutene polymer functionalized with adamantyl and perfluorocyclobutylidene.

High-Performance Extremely Low-k Film Integration Technology with Metal Hard Mask Process for Cu Interconnects

2016 ◽  
Vol 5 (10) ◽  
pp. P578-P583 ◽  
Author(s):  
Naoki Torazawa ◽  
Susumu Matsumoto ◽  
Takeshi Harada ◽  
Yasunori Morinaga ◽  
Daisuke Inagaki ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Integration Technology ◽  
Cu Interconnects ◽  
Low K

scholarly journals Hydrolysis and condensation of a benzocyclobutene-functionalized precursor for the synthesis of high performance low-K polymers

RSC Advances ◽  
2017 ◽  
Vol 7 (24) ◽  
pp. 14406-14412 ◽  
Author(s):  
Yuanrong Cheng ◽  
Wenhao Chen ◽  
Zhuo Li ◽  
Tangwei Zhu ◽  
Ziyu Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Functionalized Polymers ◽  
Synthetic Route ◽  
Hydrolysis And Condensation ◽  
Low K

A new synthetic route involving the hydrolysis and condensation of a BCB precursor for high performance low-K benzocyclobutene-functionalized polymers was developed.

Kinetics of a novel cytosolic protein during the onset of renal epithelial cell growth

1988 ◽  
Vol 255 (5) ◽  
pp. F868-F873 ◽  
Author(s):  
H. N. Aithal ◽  
M. M. Walsh-Reitz ◽  
S. Kartha ◽  
S. L. Gluck ◽  
W. A. Franklin ◽  
...  
Keyword(s):  
Epithelial Cells ◽  
High Performance ◽  
Rabbit Antiserum ◽  
Size Exclusion ◽  
Immunocytochemical Staining ◽  
Enzyme Linked Immunosorbent Assay ◽  
Renal Epithelial Cell ◽  
Control Value ◽  
Low K ◽  
In Cells

Exposure of monkey kidney epithelial cells (BSC-1 line) to medium with a reduced K concentration (3.2 mM) stimulated growth and transiently activated glyceraldehyde-3-phosphate dehydrogenase (G3PD). The increase in enzyme activity was mediated by a cytosolic modifier protein that was purified using affinity and size-exclusion chromatography, and anion-exchange high-performance liquid chromatography. The apparent molecular mass of the protein was 62 kDa. A monospecific antibody to the protein was prepared from rabbit antiserum and used as an immunoprobe. Immunocytochemical staining and Western blotting revealed that the protein was a normal constituent of the cytosol and that it accumulated in cells exposed to low-K medium. A quantitative enzyme-linked immunosorbent assay showed that the amount of modifier protein increased progressively for up to 2 h in cells exposed to low-K medium, and then returned to the control value, a kinetic profile similar to that observed for G3PD activity. These results indicate that the modifier protein is a constituent of renal epithelial cells and accumulates transiently in the cytosol where it could regulate G3PD activity during the onset of growth induced by the low-K mitogenic signal.

Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Copper Interconnects ◽  
Deuterium Plasma ◽  
Hydrogen Silsesquioxane ◽  
Low K

A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures

2000 ◽  
Vol 612 ◽  
Author(s):  
Yuxiao Zeng ◽  
Linghui Chen ◽  
T. L. Alford
Keyword(s):  
Comparative Study ◽  
Direct Contact ◽  
Elevated Temperatures ◽  
Primary Source ◽  
Hydrogen Silsesquioxane ◽  
Titanium Layer ◽  
To Come ◽  
Al Metallization ◽  
Interconnect Technology ◽  
Low K

AbstractFor the benefit of reducing capacitance in multilevel interconnect technology, low-k dielectric HSQ (hydrogen silsesquioxane) has been used as a gapfill material in Al-metallization- based non-etchback embedded scheme. The vias are consequently fabricated through the HSQ layer followed by W plug deposition. In order to reduce the extent of via poisoning and achieve good W/Al contact, thin Ti/TiN stack films are typically deposited before via plug deposition. In this case, HSQ makes direct contact with the Ti layer. The reliability of the Ti/HSQ structures at elevated temperatures has been systematically studied in this work by using a variety of techniques. These results are also compared with those from Ti/TEOS (Tetraethylorthosilicate) structure, where TEOS is a conventional intra-metal dielectric. When the temperature is below 550 °C, a significant number of oxygen atoms are observed to diffuse into the titanium layer. The primary source of oxygen is believed to come from the HSQ film. When the temperature is above 550 °C, HSQ starts to react with Ti. At 700 °C, a TiO/Ti5Si3/HSQ stack structure forms. The Ti/HSQ system exhibits a higher reactivity than that of the Ti/TEOS system.

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