A Study of Water Absorption Induced-Dielectric Constant Increase and Its Suppression on Copper Damascene Interconnect Structure with Porous Low-k (k=2.3) Dielectrics

2006 ◽  
Author(s):  
N. Nakamura ◽  
N. Matsunaga ◽  
K. Higashi ◽  
M. Shimada ◽  
H. Miyajima ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Absorption ◽  
Constant Increase ◽  
Low K ◽  
Dielectric Constant Increase

Time-Dependent Dielectric-Constant Increase

2003 ◽  
Vol 150 (12) ◽  
pp. F203 ◽  
Author(s):  
Daisuke Ryuzaki ◽  
Takeshi Ishida ◽  
Takeshi Furusawa
Keyword(s):  
Dielectric Constant ◽  
Time Dependent ◽  
Constant Increase ◽  
Dielectric Constant Increase

Ferroelectric and Dielectric Properties of La2O3-Doped BaTiO3 Ceramics

2011 ◽  
Vol 418-420 ◽  
pp. 721-725
Author(s):  
Yi Shan Wang ◽  
Xiang Yun Deng ◽  
Yan Jie Zhang ◽  
Ren Bo Yang ◽  
Li Ren Han ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Constant Increase ◽  
Dielectric Constant Increase

The different concentration La2O3-doped BaTiO3 ceramics were prepared by sol-gel method. The ferroelectric and dielectric properties of the ceramics are characterized by TF analyzer 2000. With the increased amount of La2O3-doped, the dielectric constant increase gradually, when the sintering temperature is 1250 °C, the dielectric constant has reached 4648 for La2O3 with 0.4％-doped. With the temperature increased the dielectric constant of La-BaTiO3 increase gradually, when the sintering temperature is 1290 °C, the dielectric constant has reached 7066 for La2O3 with 0.4％-doped.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Sol–gel deposited xerogel, aerogel and porogen based porous low-k thin films: A comparative investigation

2021 ◽  
pp. 2140019
Author(s):  
Swati Gupta ◽  
Anil Gaikwad ◽  
Ashok Mahajan ◽  
Lin Hongxiao ◽  
He Zhewei
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Comparative Investigation ◽  
Crosstalk Noise ◽  
Nanoelectronic Devices ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Xerogel Films ◽  
Low K ◽  
Porosity Percentage

Low dielectric constant (Low-[Formula: see text]) films are used as inter layer dielectric (ILD) in nanoelectronic devices to reduce interconnect delay, crosstalk noise and power consumption. Tailoring capability of porous low-[Formula: see text] films attracted more attention. Present work investigates comparative study of xerogel, aerogel and porogen based porous low-[Formula: see text] films. Deposition of SiO2 and incorporation of less polar bonds in film matrix is confirmed using Fourier Transform Infra-Red Spectroscopy (FTIR). Refractive indices (RI) of xerogel, aerogel and porogen based low-[Formula: see text] films observed to be as low as 1.25, 1.19 and 1.14, respectively. Higher porosity percentage of 69.46% is observed for porogen-based films while for shrinked xerogel films, it is lowered to 45.47%. Porous structure of low-[Formula: see text] films has been validated by using Field Emission Scanning Electron Microscopy (FE-SEM). The pore diameters of porogen based annealed samples were in the range of 3.53–25.50 nm. The dielectric constant ([Formula: see text]) obtained from RI for xerogel, aerogel and porogen based films are 2.58, 2.20 and 1.88, respectively.

Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide

2006 ◽  
Vol 914 ◽  
Author(s):  
Hanan Assaf ◽  
E. Ntsoenzok ◽  
M-O. Ruault ◽  
S. Ashok
Keyword(s):  
Dielectric Constant ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Noble Gas ◽  
Reference Sample ◽  
Strong Decrease ◽  
Capacitance Measurements ◽  
Low K ◽  
Higher Doses ◽  
Very High

AbstractThermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5x1016Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≤400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1x1016Xe/cm2. But for the higher doses of 3.5 and 5x1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO2 sample from 4 (reference sample) to 1.5.

scholarly journals Preparation and characterization of novel naphthyl epoxy resin containing 4-fluorobenzoyl side chains for low-k dielectrics application

RSC Advances ◽  
2017 ◽  
Vol 7 (85) ◽  
pp. 53970-53976 ◽  
Author(s):  
Tianyi Na ◽  
Hao Jiang ◽  
Liang Zhao ◽  
Chengji Zhao
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Epoxy Resin ◽  
Epoxy Resins ◽  
Side Chains ◽  
The Novel ◽  
Lower Dielectric Constant ◽  
Low K

The novel naphthyl epoxy resin was synthesized and cured with MeHHPA. It showed significantly lower dielectric constant and dielectric loss than other commercial epoxy resins due to the introduction of fluorine on the side chains.

Sign in / Sign up

Export Citation Format

Share Document