Time-Dependent Dielectric-Constant Increase

2003 ◽  
Vol 150 (12) ◽  
pp. F203 ◽  
Author(s):  
Daisuke Ryuzaki ◽  
Takeshi Ishida ◽  
Takeshi Furusawa
Keyword(s):  
Dielectric Constant ◽  
Time Dependent ◽  
Constant Increase ◽  
Dielectric Constant Increase

Ferroelectric and Dielectric Properties of La2O3-Doped BaTiO3 Ceramics

2011 ◽  
Vol 418-420 ◽  
pp. 721-725
Author(s):  
Yi Shan Wang ◽  
Xiang Yun Deng ◽  
Yan Jie Zhang ◽  
Ren Bo Yang ◽  
Li Ren Han ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Constant Increase ◽  
Dielectric Constant Increase

The different concentration La2O3-doped BaTiO3 ceramics were prepared by sol-gel method. The ferroelectric and dielectric properties of the ceramics are characterized by TF analyzer 2000. With the increased amount of La2O3-doped, the dielectric constant increase gradually, when the sintering temperature is 1250 °C, the dielectric constant has reached 4648 for La2O3 with 0.4％-doped. With the temperature increased the dielectric constant of La-BaTiO3 increase gradually, when the sintering temperature is 1290 °C, the dielectric constant has reached 7066 for La2O3 with 0.4％-doped.

Time-Dependent Reliability Of The Interface Between A-C:F And Inorganic Dielectrics

1998 ◽  
Vol 511 ◽  
Author(s):  
Kazuhiko Endo ◽  
Keisuke Shinoda ◽  
Toni Tatsumi ◽  
Yoshihisa Matsubara ◽  
Manabu Iguchi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Water Absorption ◽  
Radical Reaction ◽  
Mixing Layer ◽  
Radical Formation ◽  
Time Dependent ◽  
Hydrogen Annealing

ABSTRACTWe have investigated the time dependent reliability of a-C:F films, and found that SiO 2 or SiN cover layers on a-C:F films peeled off partially after about a week when the a-C:F film was grown from C4F8. and annealed in N2 or grown from C4F8+CH4. The interfaces between a-C:F and SiN have a mixing layer indicating a radical reaction at the interface. An a-C:F film grown from C4F8+CH4 has greater water-absorption than a film grown from C4F8 Thus, hydrolysis and radical formation after annealing may cause degradation of the interface. We found that hydrogen annealing effectively decreases the dielectric constant and suppresses such time-dependent degradation.

scholarly journals Effect of High Density Polyethylene (HDPE) on Structural and Optical Properties of (PP/PMMA) Blends

2015 ◽  
Vol 60 ◽  
pp. 94-106
Author(s):  
Majeed Ali Habeeb ◽  
Ahmed Hamza Abbas
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
High Density Polyethylene ◽  
Refraction Index ◽  
High Density ◽  
Band Gaps ◽  
Ir Spectrometry ◽  
Ft Ir ◽  
Pmma Blends ◽  
Dielectric Constant Increase

In the present work, Polypropylene (PP) was blended with poly methyl methacrylate (PMMA) to form (PP/PMMA) polymer blends. High Density Polyethylene (HDPE) was mixed into these blends at different weight fractions (2,4,6,8) % wt to form (PP/PMMA/HDPE) blends were prepared using an one screw extruder. results obtained from Scanning Electron Microscopy (SEM) revealed that there was a reduction in surface roughness any decrease in clusters, drilling and bends, as for Fourier Transform Infrared (FT-IR) spectrometry showed no change in the wave numbers of the functional groups. The optical properties of samples are investigated by measuring optical absorption spectra in the wavelength range from 260 to 1100 nm. this results show that Eg of the blends increases with increasing high density polyethylene contents, the indirect optical band gaps for (PP/PMMA) and (PP/PMMA/HDPE) blends were estimated to be about 2.83,2.9,2.95,3and 3.1 eV for indirect allowed transitions, whereas the indirect forbidden band gaps were determined as 2,2.1,2.15,2.2 and 2.3 eV with increase high density Polyethylene contents, respectively. The absorbance, absorption coefficient, extinction coefficient and the imaginary dielectric constant of (PP/PMMA/HDPE) decreases with increasing of HDPE percentages except the transmittance, refraction index and real part of the dielectric constant increase with increasing of high density polyethylene.

scholarly journals Effect of nano-BaTiO3 on thermal, mechanical, and electrical properties of HDDA/TPA photopolymer prepared by a digital light processor RP machine

2017 ◽  
Vol 24 (6) ◽  
pp. 875-881
Author(s):  
Sigit Tri Wicaksono ◽  
Shih-Hsuan Chiu ◽  
Kun-Ting Chen ◽  
Sheng-Hong Pong
Keyword(s):  
Dielectric Constant ◽  
Semiconductor Device ◽  
Inverse Correlation ◽  
Filler Loading ◽  
Thermo Gravimetric ◽  
Degradation Temperature ◽  
Mechanical And Electrical Properties ◽  
Thermo Gravimetric Analyzer ◽  
Dielectric Constant Increase ◽  
Semiconductor Device Analyzer

AbstractThe acrylate-based photopolymer consists of tetra-functional polyester acrylate (TPA), and hexanediol diacrylate (HDDA) has been successfully composited with nano barium titanate (BaTiO3) and completely cured via a digital light processor RP machine. The degradation temperature, tensile strength, hardness, resistivity, and dielectric constant of samples were characterized by Thermo Gravimetric Analyzer Hi-Res TGA2950, Universal Tensile Machine JIA701, Hardness Shore D tester, Fluke 117 multimeter, and Agilent B1500A Semiconductor Device Analyzer, respectively. The morphology changes of the samples were also investigated using the JEOL JSM-6390LV scanning electron microscopy (SEM). The results show that the improvement of degradation temperature is not obvious. Furthermore, the modulus elasticity, hardness, and dielectric constant increase as the filler loading increases up to 2 phr, but the resistivity is vice versa. Interestingly, there is an inverse correlation between dielectric constant and resistivity of photopolymer/BaTiO3 nanocomposite.

scholarly journals The Effect of Thickness on Some Optical Properties of Sb2S3 Thin Films Prepared by Chemical Bath Deposition

2010 ◽  
Vol 7 (1) ◽  
pp. 168-173
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Chemical Bath Deposition ◽  
Wavelength Range ◽  
Imaginary Part ◽  
Extinction Coefficient ◽  
Dielectric Constant Increase

Sb2S3 thin films have been prepared by chemical bath deposition on a glas sub Absorbance and transmittance spectra were recorded in the wavelength range (30-900) nm. The effects of thickness on absorption coefficient, reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were estimated. It was found that the reflectivity, absorption coefficient , extinction coefficient, real part of dielectric constant and refractive index, all these parameters decrease as the thickness increased, while the imaginary part of the dielectric constant increase as the thickness increased.

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