Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide

2006 ◽  
Vol 914 ◽  
Author(s):  
Hanan Assaf ◽  
E. Ntsoenzok ◽  
M-O. Ruault ◽  
S. Ashok
Keyword(s):  
Dielectric Constant ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Noble Gas ◽  
Reference Sample ◽  
Strong Decrease ◽  
Capacitance Measurements ◽  
Low K ◽  
Higher Doses ◽  
Very High

AbstractThermally-grown 220nm-thick silicon oxide layers were implanted at room temperature with 300keV Xe at doses ranging from 0.5 to 5x1016Xe/cm2. As-implanted samples exhibit bubbles in silicon oxide for all doses. Annealing at T≤400°C results in the disappearance of bubbles from SiO2 layer for the dose of 1x1016Xe/cm2. But for the higher doses of 3.5 and 5x1016Xe/cm2, the bubbles are very stable and remain in the sample even after very high thermal annealing. Capacitance measurements show a strong decrease in the dielectric constant k of the implanted SiO2 sample from 4 (reference sample) to 1.5.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

2005 ◽  
Vol 864 ◽  
Author(s):  
E. Ntsoenzok ◽  
H. Assaf ◽  
M.O. Ruault
Keyword(s):  
Cross Section ◽  
Silicon Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Noble Gas ◽  
Inert Gas ◽  
Effective Dielectric Constant ◽  
Rare Gas ◽  
Minimum Threshold ◽  
Transmission Electron ◽  
Low K

AbstractIn this pioneering study, we have extended noble-gas implant-induced cavity generation in Si and other semiconductors to a dielectric, viz., SiO2 by implanting a variety of inert gas species. It has been seen that helium and neon do not induce bubbles/cavities in SiO2, regardless of implantation parameters and nature of the sample. Krypton and xenon implantation however result in bubbles/cavities formation in the oxide layer. In the case of Xe a minimum threshold dose of about 1016 cm-2 is needed for their formation. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain even after a 1100°C anneal, while Xe strongly desorbs out at that temperature. C-V measurements reveal that the effective dielectric constant K is reduced from 3.9 SiO2 for bulk SiO2 to < 2.6, thus making this technique very attractive for low-k applications in Si technology.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

1999 ◽  
Vol 565 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Properties of New Low Dielectric Constant Spin-on Silicon Oxide based Polymers

1997 ◽  
Vol 476 ◽  
Author(s):  
Nigel P. Hacker ◽  
Gary Davis ◽  
Lisa Figge ◽  
Todd Krajewski ◽  
Scott Lefferts ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Polymeric Materials ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chip Size ◽  
Low Dielectric Constant Materials ◽  
Low K

Low dielectric constant materials (k < 3.0) have the advantage that higher performance IC devices may be manufactured with minimal increases in chip size. The reduced capacitance given by these materials permits shrinking spacing between metal lines to below 0.25 μm and the ability to decrease the number of levels of metal in a device. The technologies being considered for low k applications are CVD or spin-on of inorganic or organic polymeric materials. Traditional spin-on silicates or siloxanes have been used as planarizing dielectrics during the last 15 years and usually have k > 3.0.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

1999 ◽  
Vol 564 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

scholarly journals Investigation of Grain Size Effect on the Impedance of CaCu3Ti4O12 from 100 Hz to 1 GHz of Frequency

2012 ◽  
Vol 620 ◽  
pp. 230-235 ◽  
Author(s):  
Muhammad Azwadi Sulaiman ◽  
Sabar Derita Hutagalung ◽  
Zainal Arifin Ahmad ◽  
Mohd Fadzil Ain
Keyword(s):  
Dielectric Constant ◽  
Barrier Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Perovskite Phase ◽  
Wide Frequency Range ◽  
Treatment Temperature ◽  
Domain Boundaries ◽  
High Dielectric ◽  
Very High

CaCu3Ti4O12(CCTO) is a cubical perovskite phase and sintered ceramics exhibit very high dielectric constant at room temperature. The speculated origins of the high dielectric constant are the existence of insulative barrier layer at grain boundaries and domain boundaries which created an internal barrier layer capacitance (IBLC) at the microstructure of CCTO. The relation of grains and domains electrical resistance were studied in this work by using impedance spectroscopy (IS). A series of samples with different heat treatment temperature were tested to investigate their microstructure by using field emission scanning electron microscopy (FESEM). The grains and domains resistance was calculated from a wide frequency range of impedance complex plane measurement (100 Hz to 1 GHz). The FESEM and IS analyses showed the dependency of grains and domains resistance to average grains size of CCTO microstructure.

Mechanical Enhancement Of Nanoporous Low-K Films As Interlayer Dielectrics By Ion Implantation

2002 ◽  
Vol 734 ◽  
Author(s):  
Alok Nandini U. Roy ◽  
Zubin P. Patel ◽  
A. Mallikarjunan ◽  
H. Bakhru ◽  
T.-M. Lu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ion Implantation ◽  
Room Temperature ◽  
Surface Hardness ◽  
Porous Films ◽  
Interlayer Dielectrics ◽  
Low K

ABSTRACTThin films of Ultra-Low K materials such as Xerogel (K=1.76) and MSQ (K=2.2) were implanted with argon, neon, nitrogen, carbon and helium with 2 × 1015 cm−2 and 1 × 1016 cm−2 dose at energies varying from 20 to 50 keV at room temperature. In this work we showed that the surface hardness of the porous films is improved five times as compared to the as-deposited porous films sacrificing the dielectric constant up to 15% after implantation (e.g., from 1.76 to 2.0). The hardness persists after 450 °C annealing. It is also shown that implantation can prevent the penetration of chemical gases such as CVD precursors in the Ultra-Low K dielectrics during a CVD process.

The Investigation of Glass Spheres Containing Elastomer Based Materials for Tunable Device Applications

2014 ◽  
Vol 33 (6) ◽  
pp. 539-543
Author(s):  
E. Şentürk ◽  
M. Okutan ◽  
A. Demirer ◽  
N. Akçakale
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Room Temperature ◽  
Bias Field ◽  
Frequency Range ◽  
Glass Spheres ◽  
Tunable Device ◽  
Device Applications ◽  
Dc Bias ◽  
Very High

AbstractIn this work, dielectric and tunability properties of glass spheres containing elastomer based materials have been investigated with dielectric spectroscopy as a function of frequency, composition and DC bias field. Real and imaginary part of dielectric constant and dielectric loss values of the gs1 (glass spheres), gs2, and gs3 were investigated in the frequency range of 100 to 40 × 106 Hz. Dielectric tunabilities of 69%, 87% and 33% were measured on gs1, gs2, and gs3 at 10 kHz and at room temperature. The degrees of anharmonic contributions to the polarization are very high for gs2 and gs3 as 4.53 × 10−8 and 1.77 × 10−8 (mm/kV)2. Also, dielectric constant, FOM (%) and absorption coefficient a values were calculated at 10 × 103 Hz and 20 × 103 V/mm depending for different glass spheres.

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