Leakage Current Degradation in SiC Junction Barrier Schottky Diodes under Heavy Ion Microbeam

Author(s):  
Cao Shuang ◽  
Yu Qingkui ◽  
Du Guanghua ◽  
Guo Jinlong ◽  
Wang He ◽  
...  
2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.


Author(s):  
R. A. Johnson ◽  
A. F. Witulski ◽  
D. R. Ball ◽  
K. F. Galloway ◽  
A. L. Sternberg ◽  
...  

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.


2019 ◽  
Vol 40 (11) ◽  
pp. 1796-1799 ◽  
Author(s):  
Kwangeun Kim ◽  
Dong Liu ◽  
Jiarui Gong ◽  
Zhenqiang Ma

2018 ◽  
Vol 65 (1) ◽  
pp. 269-279 ◽  
Author(s):  
Megan C. Casey ◽  
Jean-Marie Lauenstein ◽  
Ronald J. Weachock ◽  
Edward P. Wilcox ◽  
Lang M. Hua ◽  
...  

2020 ◽  
Vol 67 (7) ◽  
pp. 1381-1389
Author(s):  
C. Martinella ◽  
T. Ziemann ◽  
R. Stark ◽  
A. Tsibizov ◽  
K. O. Voss ◽  
...  

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.


2009 ◽  
Vol 53 (1) ◽  
pp. 14-17 ◽  
Author(s):  
P.G. Muzykov ◽  
A.V. Bolotnikov ◽  
T.S. Sudarshan

Sign in / Sign up

Export Citation Format

Share Document