Leakage Current Degradation in SiC Junction Barrier Schottky Diodes under Heavy Ion Microbeam

2019 ◽  
Author(s):  
Cao Shuang ◽  
Yu Qingkui ◽  
Du Guanghua ◽  
Guo Jinlong ◽  
Wang He ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Heavy Ion

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Dissipation ◽  
Schottky Diodes ◽  
Physical Structure ◽  
Active Area ◽  
Clear Correlation ◽  
Local Power ◽  
Degradation Mechanisms ◽  
Failure Simulation

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.

Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices

2021 ◽  
pp. 1-1
Author(s):  
R. A. Johnson ◽  
A. F. Witulski ◽  
D. R. Ball ◽  
K. F. Galloway ◽  
A. L. Sternberg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ion ◽  
Power Devices

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Reduction of Leakage Current in GaN Schottky Diodes Through Ultraviolet/Ozone Plasma Treatment

2019 ◽  
Vol 40 (11) ◽  
pp. 1796-1799 ◽  
Author(s):  
Kwangeun Kim ◽  
Dong Liu ◽  
Jiarui Gong ◽  
Zhenqiang Ma
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Schottky Diodes

scholarly journals Failure Analysis of Heavy Ion-Irradiated Schottky Diodes

2018 ◽  
Vol 65 (1) ◽  
pp. 269-279 ◽  
Author(s):  
Megan C. Casey ◽  
Jean-Marie Lauenstein ◽  
Ronald J. Weachock ◽  
Edward P. Wilcox ◽  
Lang M. Hua ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Schottky Diodes ◽  
Heavy Ion

scholarly journals Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020 ◽  
Vol 67 (7) ◽  
pp. 1381-1389
Author(s):  
C. Martinella ◽  
T. Ziemann ◽  
R. Stark ◽  
A. Tsibizov ◽  
K. O. Voss ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ion ◽  
Single Event ◽  
Leakage Current Mechanism ◽  
Current Mechanism

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes

2009 ◽  
Vol 53 (1) ◽  
pp. 14-17 ◽  
Author(s):  
P.G. Muzykov ◽  
A.V. Bolotnikov ◽  
T.S. Sudarshan
Keyword(s):  
Leakage Current ◽  
Schottky Diodes
Sign in / Sign up

Export Citation Format

Share Document