Reduction of Leakage Current in GaN Schottky Diodes Through Ultraviolet/Ozone Plasma Treatment

2019 ◽  
Vol 40 (11) ◽  
pp. 1796-1799 ◽  
Author(s):  
Kwangeun Kim ◽  
Dong Liu ◽  
Jiarui Gong ◽  
Zhenqiang Ma
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Schottky Diodes

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Dissipation ◽  
Schottky Diodes ◽  
Physical Structure ◽  
Active Area ◽  
Clear Correlation ◽  
Local Power ◽  
Degradation Mechanisms ◽  
Failure Simulation

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

TiO2-based MIM capacitors featuring suppressed leakage current by embedding Ge nanocrystals

RSC Advances ◽  
2015 ◽  
Vol 5 (18) ◽  
pp. 13550-13554 ◽  
Author(s):  
Meng-Ting Yu ◽  
Kuen-Yi Chen ◽  
Yu-Hsun Chen ◽  
Chia-Chun Lin ◽  
Yung-Hsien Wu
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Ge Nanocrystals ◽  
Mim Capacitors

Leakage current suppression of TiO2-based MIM capacitors is achieved by using plasma treatment and embedding Ge nanocrystals.

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes

2009 ◽  
Vol 53 (1) ◽  
pp. 14-17 ◽  
Author(s):  
P.G. Muzykov ◽  
A.V. Bolotnikov ◽  
T.S. Sudarshan
Keyword(s):  
Leakage Current ◽  
Schottky Diodes

Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

2014 ◽  
Vol 778-780 ◽  
pp. 828-831 ◽  
Author(s):  
Junichi Hasegawa ◽  
Kazuya Konishi ◽  
Yu Nakamura ◽  
Kenichi Ohtsuka ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Leakage Current ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Stacking Faults ◽  
Metal Electrode ◽  
Reverse Leakage Current ◽  
Electrode Interface ◽  
The Relationship

We clarified the relationship between the enhanced leakage current of SiC Junction Barrier Schottky diodes and the stacking faults in the SiC crystal at the SiC and metal electrode interface by measuring the electrical and optical properties, and confirm by using the numerical simulations. Numerical simulation considering local lowering of Schottky barrier height, which is 0.8 eV lower than that of 4H-SiC well explained the 2-4 orders of magnitude higher reverse leakage current caused by the SFs. We concluded that the locally lowering of the Schottky barrier height at the 3C-SiC layer in the 4H-SiC surface is a main cause of the large reverse leakage current.

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