3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 621-624 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Nathanael Cueva ◽  
Tony Witt ◽  
Richard L. Woodin
Keyword(s):  
Silicon Carbide ◽  
Failure Analysis ◽  
Ohmic Contact ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Device Failure ◽  
Electrical Failure ◽  
The Impact ◽  
Surge Current

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

Si1-xCx/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current

2015 ◽  
Vol 821-823 ◽  
pp. 571-574
Author(s):  
Gerard Colston ◽  
Maksym Myronov ◽  
Stephen Rhead ◽  
Vishal A. Shah ◽  
Yogesh Sharma ◽  
...  
Keyword(s):  
Power Electronics ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Schottky Diode ◽  
High Power ◽  
Reverse Bias ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Crystalline Quality ◽  
The Impact

Vertical Schottky diodes have been fabricated on low C content Si1-xCxand 3C-SiC epilayers epitaxially grown on Si(001) substrates. Significant leakage current was observed in 3C-SiC diodes under reverse bias, masking any rectifying behavior. This issue is far less pronounced in Si1-xCxbased Schottky diodes which demonstrate a clear critical breakdown. Leakage current is shown to be greater in relaxed Si1-xCxlayers. While crystalline Si1-xCxis not currently a viable material for high power electronics it is useful for assessing the impact lattice mismatch and crystalline quality has on the behavior of rectifiers.

4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers

2010 ◽  
Vol 645-648 ◽  
pp. 897-900 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Schottky Diodes ◽  
Nickel Silicide ◽  
Schottky Contacts ◽  
Stable Operation ◽  
Epitaxial Structure ◽  
Ambient Temperatures ◽  
Forward Current

4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩcm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient temperatures up to 200 °C.

Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes

2012 ◽  
Vol 717-720 ◽  
pp. 911-916 ◽  
Author(s):  
Fujiwara Hirokazu ◽  
T. Katsuno ◽  
Tsuyoshi Ishikawa ◽  
H. Naruoka ◽  
Masaki Konishi ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Electric Fields ◽  
Schottky Diodes ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Nano Scale ◽  
Threading Dislocation Density ◽  
Positive Correlations ◽  
The Impact

The impact of threading dislocation density on the leakage current of reverse IV characteristics in 1.2 kV Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs), and PN junction diodes (PNDs) was investigated. The leakage current density and threading dislocation density have different positive correlations in each type of diode. For example, the correlation in SBDs is strong, but weak in PNDs. The threading dislocations were found to be in the same location as the current leakage points in the SBDs, but not in the PNDs. Nano-scale inverted cone pits were observed at the Schottky junction interface in SBDs, and it was found that leakage current increases in these diodes due to the concentration of electric fields at the peaks of the pits. These nano-scale pits were also observed directly above threading dislocations. In addition, this study succeeded in reducing the leakage current variation of 200 A-class JBSDs and SBDs by eliminating the nano-scale pits above the threading dislocations. As a result, a theoretical straight-line waveform was achieved.

Effect of Thermal Treatment for Pd and PdSi Schottky Contacts on p-GaN

2006 ◽  
Vol 517 ◽  
pp. 242-246
Author(s):  
C.K. Tan ◽  
Azlan Abdul Aziz ◽  
F.K. Yam ◽  
C.W. Lim ◽  
Hassan Zainuriah ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Barrier Heights

Pd Schottky diode exhibited stable rectifying behavior up to 500°C for 35 minutes in sequential annealing; with the Schottky barrier heights (SBHs), ΦB (I-V) of 0.6-0.7eV with the leakage current (LC) of 20 A at -5V. With the same range of SBHs, PdSi diodes were stable up to 500°C for 5 minutes with the LC of 0.182mA at -5V. The electrical characteristics obtained in this study are also compared with those obtained for Pd and PdSi Schottky diodes on p-GaN.

scholarly journals Materials and Processes for Schottky Contacts on Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 298
Author(s):  
Marilena Vivona ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Barrier Properties ◽  
Essential Elements ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
New Class ◽  
Fundamental Properties

Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

Argon Bombardment of 4H Silicon Carbide Substrates for Tailored Schottky Diode Barrier Heights

2019 ◽  
Vol 963 ◽  
pp. 506-510
Author(s):  
Michael Schneider ◽  
Laura Stöber ◽  
Jens P. Konrath ◽  
Florian Patocka ◽  
Ulrich Schmid
Keyword(s):  
Silicon Carbide ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Molybdenum Nitride ◽  
Barrier Heights ◽  
Straightforward Method ◽  
Current Voltage ◽  
Argon Ion Bombardment ◽  
The Impact

In this paper, the impact of substrate preconditioning by ion bombardment in-situ in a conventional sputter equipment on n-doped 4H-silicon carbide (SiC) Schottky diodes with molybdenum nitride metallization is studied. By variation of the plasma power during argon ion bombardment, the effective barrier height is adjustable in the range from 0.66 to 0.96 eV, as deduced by current / voltage measurements over a wide temperature range. Therefore, this approach offers a straightforward method to tailor the Schottky barrier height over a significant range by introducing an insitu substrate pretreatment step available in most sputter equipment.

scholarly journals Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

2012 ◽  
Vol 1439 ◽  
pp. 89-94
Author(s):  
W. Lu ◽  
K. L. Pey ◽  
N. Singh ◽  
K. C. Leong ◽  
Q. Liu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Ideality Factor ◽  
Silicon Nanowire ◽  
Schottky Diodes ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Energy Bands ◽  
The Impact ◽  
Silicon Interface

ABSTRACTIn this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS-compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing processes on nickel silicide formation in DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower leakage current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also gave ideality factor much closer to unity and exhibited lower electron SBH (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ~ 5X and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to 1-step DSSB VSiNW diode.

Backside Emission Microscopy for Integrated Circuits on Heavily Doped Substrate

1998 ◽  
Author(s):  
Ching-Lang Chiang ◽  
Neeraj Khurana ◽  
Daniel T. Hurley ◽  
Ken Teasdale
Keyword(s):  
Integrated Circuits ◽  
Ccd Camera ◽  
Preparation Technique ◽  
Absorption Data ◽  
Ir Radiation ◽  
Heavily Doped ◽  
Emission Microscopy ◽  
Diffraction Patterns ◽  
Emission Detection ◽  
The Impact

Abstract Backside emission microscopy on heavily doped substrate materials was analyzed from the viewpoint of optical absorption by the substrate and sample preparation technique. Although it was widely believed that silicon is transparent to infrared (IR) radiation, we demonstrated by using published absorption data that silicon with doping levels above 5 x 1018cm-3 is virtually opaque, leaving only a narrow transmission window around the energy bandgap. Because the transmission depends exponentially on the thickness of die, thinning to below 100µm is shown to be required. Even an advanced IR sensor such as HgCdTe would find little light to detect without thinning the die. For imaging the circuit, an IR laser-based system produced poor images in which the diffraction patterns often ruined the contrast and obscured the image. Hence, a precise, controlled die thinning technique is required both for emission detection and backside imaging. A thinning and polishing technique was briefly described that was believed to be applicable to most ceramic packages. A software technique was employed to solve the image quality problem commonly encountered in backside imaging applications using traditional microscope light source and a scientific grade CCD camera. Finally, we showed the impact of die thickness on imaging circuits on a heavily doped n type substrate.

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