Impact of Oxygen Vacancies Profile and Fringe Effect on Leakage Current Instability of Ta2O5 MIM Capacitors

2008 ◽  
Author(s):  
V. Martinez ◽  
C. Besset ◽  
F. Monsieur ◽  
L. Montes ◽  
G. Ghibaudo
Keyword(s):  
Leakage Current ◽  
Oxygen Vacancies ◽  
Current Instability ◽  
Fringe Effect ◽  
Mim Capacitors

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Wet Process Developments for Electrical Properties Improvement Of 3D MIM Capacitors

2007 ◽  
Vol 134 ◽  
pp. 379-382
Author(s):  
Claire Therese Richard ◽  
D. Benoit ◽  
S. Cremer ◽  
L. Dubost ◽  
B. Iteprat ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Copper Oxide ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
3D Structure ◽  
Wet Process ◽  
High K ◽  
3D Architecture ◽  
High K Dielectric ◽  
Mim Capacitors

3D architecture is an alternative way to high-k dielectric to increase the capacitance of MIM structure. However, the top of this kind of structure is very sensitive to defectivity and then requires a special wet treatment. In this paper, we present the process flow for a 3D MIM integration in a CMOS copper back-end and a two steps wet process which provides very good electrical performances, i.e. leakage current lower than 10-9A.cm-2 at 5V / 125°C and breakdown voltage higher than 20V. At first, a SC1 step is done for electrode isolation improvement by material etching with good selectivity towards dielectric: that’s the electrode recess. In the second time, a HF step is done for copper oxide dilution and residues removal from the top of the 3D structure.

TiO2-based MIM capacitors featuring suppressed leakage current by embedding Ge nanocrystals

RSC Advances ◽  
2015 ◽  
Vol 5 (18) ◽  
pp. 13550-13554 ◽  
Author(s):  
Meng-Ting Yu ◽  
Kuen-Yi Chen ◽  
Yu-Hsun Chen ◽  
Chia-Chun Lin ◽  
Yung-Hsien Wu
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Ge Nanocrystals ◽  
Mim Capacitors

Leakage current suppression of TiO2-based MIM capacitors is achieved by using plasma treatment and embedding Ge nanocrystals.

scholarly journals Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties

2020 ◽  
Vol 49 (11) ◽  
pp. 6270-6275
Author(s):  
A. Joseph ◽  
G. Lilienkamp ◽  
T. F. Wietler ◽  
H. J. Osten
Keyword(s):  
Oxide Layer ◽  
Leakage Current ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxygen Vacancies ◽  
Depth Profiling ◽  
Implantation Dose ◽  
Hydroxyl Group ◽  
High Dose ◽  
Nitrogen Incorporation

Abstract The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation dose. The presence of nitrogen incorporation on the Gd2O3 layer was studied using Auger electron spectroscopy. Nitrogen incorporation is believed to occur by filling the oxygen vacancies or by removing hydroxyl group ions in Gd2O3. A maximum concentration of 11% was obtained for nitrogen in the interface between the silicon dioxide and Gd2O3 layer and the implanted areas of the Gd2O3 oxide layer after sputter depth profiling. The nitrogen distribution in the layer was found to be non-uniform. Nitrogen incorporation sharply reduced the leakage current and effectively suppressed the hysteresis. Leakage current was two orders lower compared with the pure Gd2O3.

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