Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications

2011 ◽  
Vol 284-286 ◽  
pp. 893-899
Author(s):  
Hui Xu ◽  
Li Feng Zhang ◽  
Qiu Xiang Zhang ◽  
Shi Jin Ding ◽  
David Wei Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Bonds ◽  
Metal Insulator ◽  
Capacitance Density ◽  
X Ray ◽  
Voltage Coefficient ◽  
Metal Insulator Metal ◽  
Si Content ◽  
Mim Capacitors

The reactively sputtered HfO2 and HfSixOy dielectrics have been investigated comparatively for metal-insulator-metal (MIM) capacitor applications. X-ray photoelectron spectroscopy analyses reveal the presence of Hf-O, Hf-O-Si and Si-O chemical bonds in the HfSixOy films as well as lots of oxygen vacancies. The relative concentrations of Hf-O-Si and Si-O bonds increase with an increment of the power applied to the Si target. Further, it is found that the quadratic voltage coefficient of MIM capacitor decreases with increasing the Si content in the HfSixOy dielectric in despite of a decrease in the resulting capacitance density. The HfSixOy dielectric MIM capacitors with a capacitance density of ~8.4fF/μm2 exhibit a quadratic voltage coefficient of 1840 ppm/V2 at 100kHz, which is much smaller than 2750 ppm/V2 for the HfO2 dielectric MIM capacitors with a density of ~11.8fF/μm2.

Dielectric Relaxation and Reliability of Al2O3-HfO2-Al2O3 Sandwiched Metal-Insulator-Metal (MIM) Capacitor

2013 ◽  
Vol 658 ◽  
pp. 116-119
Author(s):  
Ho Young Kwak ◽  
Hyuk Min Kwon ◽  
Sung Kyu Kwon ◽  
Jae Hyung Jang ◽  
Seung Yong Sung ◽  
...  
Keyword(s):  
Dielectric Relaxation ◽  
Charge Trapping ◽  
Dissipation Factor ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Voltage Coefficient ◽  
Low Dissipation ◽  
Metal Insulator Metal ◽  
Sandwiched Structure

. In this paper, dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitor using Al2O3-HfO2-Al2O3 sandwiched structure were analyzed. It is shown that multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature. The dielectric relaxation voltage shows little dependence on the capacitor area. The capacitance density (C0) increases and quadratic voltage coefficient (α) decreases as a function of stress time under constant voltage stress (CVS) because of the charge trapping effect in the high-k dielectric.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

scholarly journals Hydrothermal Synthesis of Iodine-Doped Nanoplates with Enhanced Visible and Ultraviolet-Induced Photocatalytic Activities

2012 ◽  
Vol 2012 ◽  
pp. 1-12 ◽  
Author(s):  
Jiang Zhang ◽  
Zheng-Hong Huang ◽  
Yong Xu ◽  
Feiyu Kang
Keyword(s):  
Photocatalytic Activity ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Diffuse Reflectance Spectroscopy ◽  
Synergetic Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Photocatalytic Activities

The iodine-doped Bi2WO6(I-BWO) photocatalyst was prepared via a hydrothermal method using potassium iodide as the source of iodine. The samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy (DRS), and photoluminescence (PL) spectroscopy. The photocatalytic activity of I-BWO for the degradation of rhodamine B (RhB) was higher than that of pure BWO and I2-BWO regardless of visible light (>420 nm) or ultraviolet light (<400 nm) irradiation. The results of DRS analysis showed that the I-BWO and I2-BWO catalysts had narrower band gaps. XPS analysis proved that the multivalent iodine species including I0and were coadsorbed on the defect surface of Bi2WO6in I-BWO. The enhanced PL intensity revealed that a large number of defects of oxygen vacancies were formed by the doping of iodine. The enhanced photocatalytic activity of I-BWO for degradation of RhB was caused by the synergetic effect of a small crystalline size, a narrow band gap, and plenty of oxygen vacancies.

scholarly journals Ferromagnetic Properties of N-Doped and Undoped TiO2 Rutile Single-Crystal Wafers with Addition of Tungsten Trioxide

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 1934 ◽  
Author(s):  
Jing Xu ◽  
Haiying Wang ◽  
Zhongpo Zhou ◽  
Zhaorui Zou
Keyword(s):  
Magnetic Properties ◽  
Single Crystal ◽  
Saturation Magnetization ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Tio2 Surface ◽  
Doped Tio2 ◽  
X Ray ◽  
N Doping ◽  
Tio2 Rutile

In this work, undoped, N-doped, WO3-loaded undoped, and WO3-loaded with N-doped TiO2 rutile single-crystal wafers were fabricated by direct current (DC) magnetron sputtering. N-doping into TiO2 and WO3 loading onto TiO2 surface were used to increase and decrease oxygen vacancies. Various measurements were conducted to analyze the structural and magnetic properties of the samples. X-ray diffraction results showed that the N-doping and WO3 loading did not change the phase of all samples. X-ray photoelectron spectroscopy results revealed that W element loaded onto rutile single-crystal wafers existed in the form of WO3. UV-Vis spectrometer results showed that the absorption edge of WO3-loaded undoped and WO3-loaded with N-doped TiO2 rutile single-crystal wafers had red shift, resulting in a slight decrease in the corresponding band gap. Photoluminescence spectra indicated that oxygen vacancies existed in all samples due to the postannealing atmosphere, and oxygen vacancies density increased with N-doping, while decreasing with WO3 loading onto TiO2 surface. The magnetic properties of the samples were investigated, and the saturation magnetization values were in the order N-doped > WO3-loaded with N-doped > undoped > WO3-loaded undoped rutile single-crystal wafers, which was the same order as the oxygen vacancy densities of these samples. N-doping improved the saturation magnetization values, while WO3-loaded decreased the saturation magnetization values. This paper reveals that the magnetic properties of WO3-loaded with N-doped rutile single-crystal wafers originate from oxygen vacancies.

Morphology of Silver Thin Films Deposited on TiO2(110) Surfaces

1998 ◽  
Vol 05 (01) ◽  
pp. 387-392 ◽  
Author(s):  
D. Abriou ◽  
D. Gagnot ◽  
J. Jupille ◽  
F. Creuzet
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Two Dimensional ◽  
Silver Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Silver Deposits ◽  
Silver Thin Films

The growth mode of silver films deposited at room temperature on TiO 2(110) surfaces has been examined by means of atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) in ultrahigh vacuum (UHV) conditions, On clean vacancy-free TiO 2(110) surfaces, 0.1-nm-thick (on average) Ag deposits form a two-dimensional (2D) layer. When the thickness of the silver overlayer is increased, 3D clusters are shown to appear while the 2D film is preserved, furthermore, the influence of surface oxygen vacancies on the growth of Ag/TiO 2(110) is evidenced by well-characterized differences in the morphology of 9-nm-thick silver deposits.

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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