A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

2014 ◽  
Vol 61 (8) ◽  
pp. 2619-2627 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
Sung-Kyu Kwon ◽  
Kwang-Seok Jeong ◽  
Sung-Kwen Oh ◽  
Sun-Ho Oh ◽  
...  
Keyword(s):  
Zirconium Oxide ◽  
Oxygen Vacancies ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

Electro-forming of vacancy-doped metal-SrTiO3-metal structures

2011 ◽  
Vol 1337 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Seibt ◽  
Hartmut Stoecker ◽  
Barbara Abendroth ◽  
Dirk C. Meyer
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Physical Vapor Deposition ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Metal Insulator ◽  
Metal Structures ◽  
Wide Range ◽  
Metal Insulator Metal

ABSTRACTResistance switching in metal – insulator - metal (MIM) structures with transition metal oxides as the insulator material is a promising concept for upcoming non-volatile memories. The electronic properties of transition metal oxides can be tailored in a wide range by doping and external fields. In this study SrTiO3 single crystals are subjected to high temperature vacuum annealing. The vacuum annealing introduces oxygen vacancies, which act as donor centers. MIM stacks are produced by physical vapor deposition of Au and Ti contacts on the front and rear face of the SrTiO3 crystal. The time dependent forming of the MIM stacks under an external voltage is investigated for crystals with varying bulk conductivities. For continued formation, the resistivity increases up to failure of the system where no current can be measured anymore and switching becomes impossible.

Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

2011 ◽  
Vol 50 (4) ◽  
pp. 04DD02 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Sang-Uk Park ◽  
Jung-Deuk Bok ◽  
Yi-Jung Jung ◽  
...  
Keyword(s):  
Conduction Mechanism ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO2Layer

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DD02 ◽  
Author(s):  
Hyuk-Min Kwon ◽  
In-Shik Han ◽  
Sang-Uk Park ◽  
Jung-Deuk Bok ◽  
Yi-Jung Jung ◽  
...  
Keyword(s):  
Conduction Mechanism ◽  
Metal Insulator ◽  
Reliability Characteristics ◽  
Metal Insulator Metal

Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer

2010 ◽  
Vol 50 (5) ◽  
pp. 652-656 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Jitendra N. Tiwari ◽  
Hsin-Chiang You ◽  
Chung-Hsin Wu ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Zirconium Oxide ◽  
Gate Dielectric ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Flexible Metal

scholarly journals Hafnium-Zirconium Oxide Interface Models with Semiconductor and Metal for Ferroelectric Devices

2021 ◽  
Author(s):  
Kisung Chae ◽  
Andrew C Kummel ◽  
Kyeongjae Cho
Keyword(s):  
Density Functional Theory ◽  
Zirconium Oxide ◽  
Density Functional ◽  
Oxide Interface ◽  
Functional Theory ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Metal Insulator Metal ◽  
Mis Structures

Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxide stack models for both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures. The role of dielectric (DE) interlayers at the...

Comparison of Reactively Sputtered HfO2 and HfSixOy Dielectrics for High Density Metal-Insulator-Metal Capacitor Applications

2011 ◽  
Vol 284-286 ◽  
pp. 893-899
Author(s):  
Hui Xu ◽  
Li Feng Zhang ◽  
Qiu Xiang Zhang ◽  
Shi Jin Ding ◽  
David Wei Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Bonds ◽  
Metal Insulator ◽  
Capacitance Density ◽  
X Ray ◽  
Voltage Coefficient ◽  
Metal Insulator Metal ◽  
Si Content ◽  
Mim Capacitors

The reactively sputtered HfO2 and HfSixOy dielectrics have been investigated comparatively for metal-insulator-metal (MIM) capacitor applications. X-ray photoelectron spectroscopy analyses reveal the presence of Hf-O, Hf-O-Si and Si-O chemical bonds in the HfSixOy films as well as lots of oxygen vacancies. The relative concentrations of Hf-O-Si and Si-O bonds increase with an increment of the power applied to the Si target. Further, it is found that the quadratic voltage coefficient of MIM capacitor decreases with increasing the Si content in the HfSixOy dielectric in despite of a decrease in the resulting capacitance density. The HfSixOy dielectric MIM capacitors with a capacitance density of ~8.4fF/μm2 exhibit a quadratic voltage coefficient of 1840 ppm/V2 at 100kHz, which is much smaller than 2750 ppm/V2 for the HfO2 dielectric MIM capacitors with a density of ~11.8fF/μm2.

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