Detailed analyses in prediction of capacitive-mismatch-induced offset in dynamic comparators

Author(s):  
Jun He ◽  
Degang Chen ◽  
Randall Geiger
Keyword(s):  
2020 ◽  
Vol 71 (6) ◽  
pp. 379-387
Author(s):  
Leïla Khanfir ◽  
Jaouhar Mouïne

AbstractRecent research has focused on finding ways to control hysteresis of dynamic comparators. The current proposed techniques are based on either geometrical dimension adjustment or digital control. The first case does not allow for post fabrication control, while the second has limited accuracy. This paper presents a new dynamic comparator design with external hysteresis adjustment using an analog voltage. This is achieved by proposing an architecture including control devices with a specific sizing. This is performed with no significant increase of the design complexity, keeping the power consumption as low as possible. The design is analyzed, showing that the proposed solution allows accurate hysteresis adjustment without affecting the inherent circuit properties. The dynamic comparator is also implemented using a 180 nm commercially available CMOS technology. The results show that a variation of 550 mV of the control voltage allows an accurate hysteresis adjustment ranging from 0 to 40 mV, according to the input conditions. Moreover, the simplicity of the circuit in conjunction with the use of dynamic technology have allowed the best performances to be achieved compared to the current state of the art, in terms of energy with an FoM equal to 116 fJ/decision and silicon area of 180 µm2 .


Author(s):  
Joao Silva ◽  
Diogo Brito ◽  
Goncalo Rodrigues ◽  
Taimur Rabuske ◽  
Antonio Couto Pinto ◽  
...  
Keyword(s):  

2017 ◽  
Vol 64 ◽  
pp. 45-52 ◽  
Author(s):  
Ata Khorami ◽  
Mohammad Sharifkhani

2019 ◽  
Vol 28 (06) ◽  
pp. 1950100 ◽  
Author(s):  
Leïla Khanfir ◽  
Jaouhar Mouïne

Comparator hysteresis is a memory phenomenon allowing outputs maintaining their past stable states until the input difference overcomes a given threshold voltage. In some applications, such as ADCs and memories, hysteresis is a deterministic error that should be minimized. In others, it can be considered as one of the design parameters, such as in implementing hysteresis control-based systems such as peak detectors and spectrum analyzers. In any case, the designer should be aware of how to estimate hysteresis to achieve the desired performances. This paper presents a mathematical approach to estimate hysteresis in clocked latch comparators. It has been demonstrated that hysteresis is not only sensitive to the clock frequency, but also to several design parameters including the transistors sizes, the common mode input voltage and the tracked input frequencies. The analysis results are validated through electrical simulations using a commercially available 0.18[Formula: see text][Formula: see text]m CMOS technology showing a maximum error of 8.6%.


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