A C-through X-band microstrip coupler for use in broadband integrated circuits

1968 ◽  
Author(s):  
R. Blight ◽  
C. Howell
Keyword(s):  
Integrated Circuits ◽  
X Band

RF Modules (Tx–Rx) with Multifunctional MMICs

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-5
Author(s):  
Martin Oppermann ◽  
Ralf Rieger
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Next Generation ◽  
Electronic Warfare ◽  
Chip Area ◽  
Operating Modes ◽  
Half Wavelength ◽  
X Band ◽  
Physical Channel ◽  
Promising Solution

Abstract Next generation RF sensor modules for multifunction active electronically steered antenna (AESA) systems will need a combination of different operating modes, such as radar, electronic warfare (EW) functionalities and communications/datalinks within the same antenna frontend. They typically operate in C-Band, X-Band and Ku-Band and imply a bandwidth requirement of more than 10 GHz. For the realisation of modern active electronically steered antennas, the transmit/receive (T/R) modules have to match strict geometry demands. A major challenge for these future multifunction RF sensor modules is dictated by the half-wavelength antenna grid spacing, that limits the physical channel width to < 12 mm or even less, depending on the highest frequency of operation with accordant beam pointing requirements. A promising solution to overcome these geometry demands is the reduction of the total monolithic microwave integrated circuit (MMIC) chip area, achieved by integrating individual RF functionalities, which are commonly achieved through individual integrated circuits (ICs), into new multifunctional (MFC) MMICs. Various concepts, some of them already implemented, towards next generation RF sensor modules will be discussed and explained in this work.

scholarly journals The Application of New Du Pont/USA/Copper Composition for Manufacturing of Thick-Film Microwave Low Loss Resonators on L and X Band

1981 ◽  
Vol 9 (2) ◽  
pp. 157-163 ◽  
Author(s):  
Janusz J. Gondek ◽  
Marek A. Wojcicki ◽  
Jan Koprowski
Keyword(s):  
Statistical Analysis ◽  
Integrated Circuits ◽  
Mathematical Models ◽  
Thick Film ◽  
Future Development ◽  
Microwave Filters ◽  
Low Loss ◽  
Microwave Integrated Circuits ◽  
X Band ◽  
Measurement Results

The applicability of the various copper compositions to the production of thick-film microwave devices has been examined. The results of this work are presented in this paper. The paper presents criteria and computer programs for thick-film microwave integrated circuits. The investigations of asymmetrical striplines, stripline and circular resonators, microwave filters etc., have been used as a basis. The circuits were examined within the frequency band of 1–12 GHz. Based on the measurement results and the statistical analysis of the parameters of microwave integrated circuits, interesting conclusions concerned with the applications of thick-film techniques to microwaves have been drawn. The results obtained have been compared with other work and new mathematical models have been prepared. Finally the future development of microwave integrated circuits has been commented on.

scholarly journals Wideband Waveform Generation Using MDDS and Phase Compensation for X-Band SAR

2020 ◽  
Vol 12 (9) ◽  
pp. 1431 ◽  
Author(s):  
Kyeong-Rok Kim ◽  
Jae-Hyun Kim
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
High Speed ◽  
Phase Error ◽  
Waveform Generator ◽  
Wide Bandwidth ◽  
Waveform Generation ◽  
Area Of Interest ◽  
X Band ◽  
Hardware Structure

This study investigated wideband waveform generation using a field programmable gate array (FPGA) for X-band high-resolution synthetic aperture radar (SAR). Due to the range resolution determined by the bandwidth, we focused on wide bandwidth generation while preserving spectrum quality. The proposed method can generate wide bandwidth using a relatively low system clock. The new approach was designed in Simulink and implemented by very-high-speed-integrated-circuits hardware description language (VHDL). We also proposed a hardware structure in accordance with the proposed method. Signal connections of FPGA and digital analog converter (DAC) are described in the design of the proposed hardware structure. The developed X-band waveform generator using the proposed method output the desired pulse waveform. For the reduction of phase error and improvement of spectrum quality at the X-band, phase error compensation and pre-distortion were applied to the waveform generator. The results of the simulation and the hardware output demonstrate that the variation and standard deviation of the phase error were improved within the frequency spectrum. Accordingly, the proposed method and the developed waveform generator have the potential to produce a high-resolution image of the area of interest.

A manufacturing process for gallium arsenide monolithic microwave integrated circuits

1987 ◽  
Vol 65 (8) ◽  
pp. 885-891
Author(s):  
S. Dindo ◽  
R. North ◽  
D. Madge
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Manufacturing Process ◽  
High Frequency ◽  
Microwave Measurements ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Active Devices ◽  
X Band

Over the last several years, Optotek has successfully developed the capability to design and process high-frequency x-band monolithic microwave integrated circuits. A process for fabricating active devices and passive elements is described. In addition, dc and microwave measurements are presented.

X-band T/R-module front-end based on GaN MMICs

2009 ◽  
Vol 1 (4) ◽  
pp. 387-394 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber ◽  
Andreas Fleckenstein ◽  
Ralf Leberer ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Ceramic Technology ◽  
High Electron ◽  
Microstrip Technology ◽  
High Power Amplifier ◽  
Front End ◽  
X Band

Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

Low-cost TRM technologies for phased array radars

2009 ◽  
Vol 1 (4) ◽  
pp. 369-375
Author(s):  
Håkan Berg ◽  
Heiko Thiesies ◽  
Niklas Billström
Keyword(s):  
Integrated Circuits ◽  
Silicon Germanium ◽  
Phased Array ◽  
Low Cost ◽  
Organic Substrates ◽  
Phased Array Antenna ◽  
Hermetic Packaging ◽  
Chip Technology ◽  
X Band ◽  
Sige Bicmos

Low-cost enabling technologies for T/R modules (TRMs) in phased array radars are proposed and analyzed in terms of technology, performance, and cost aspects. Phase and amplitude controlling integrated circuits (ICs) realized in a low-cost standard silicon process are demonstrated. The design of several ICs at the S-, C-, on X-band has shown that silicon germanium is a strong contender for gallium arsenide. This also applies to TRMs suited for military active phased array antenna (AESA) radars. The circuits presented in this paper are manufactured by austriamicrosystems in their 0.35 µm SiGe-BiCMOS process with an fT of around 70 GHz. A TRM packaging concept based on soldered surface-mount technology and organic substrates is also demonstrated. A cost analysis concludes that by using the proposed packaging concept and the SiGe core-chip technology, the TRM production cost can be potentially reduced by 70% compared to traditional ceramic hermetic packaging with core chip in GaAs technology.

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