scholarly journals Wideband Waveform Generation Using MDDS and Phase Compensation for X-Band SAR

2020 ◽  
Vol 12 (9) ◽  
pp. 1431 ◽  
Author(s):  
Kyeong-Rok Kim ◽  
Jae-Hyun Kim
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
High Speed ◽  
Phase Error ◽  
Waveform Generator ◽  
Wide Bandwidth ◽  
Waveform Generation ◽  
Area Of Interest ◽  
X Band ◽  
Hardware Structure

This study investigated wideband waveform generation using a field programmable gate array (FPGA) for X-band high-resolution synthetic aperture radar (SAR). Due to the range resolution determined by the bandwidth, we focused on wide bandwidth generation while preserving spectrum quality. The proposed method can generate wide bandwidth using a relatively low system clock. The new approach was designed in Simulink and implemented by very-high-speed-integrated-circuits hardware description language (VHDL). We also proposed a hardware structure in accordance with the proposed method. Signal connections of FPGA and digital analog converter (DAC) are described in the design of the proposed hardware structure. The developed X-band waveform generator using the proposed method output the desired pulse waveform. For the reduction of phase error and improvement of spectrum quality at the X-band, phase error compensation and pre-distortion were applied to the waveform generator. The results of the simulation and the hardware output demonstrate that the variation and standard deviation of the phase error were improved within the frequency spectrum. Accordingly, the proposed method and the developed waveform generator have the potential to produce a high-resolution image of the area of interest.

Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits

1999 ◽  
Author(s):  
Kenneth Krieg ◽  
Richard Qi ◽  
Douglas Thomson ◽  
Greg Bridges
Keyword(s):  
High Resolution ◽  
Integrated Circuits ◽  
Real Time ◽  
High Speed ◽  
Time Signal ◽  
Surface Imaging ◽  
Atomic Force ◽  
Submicron Structures ◽  
High Resolution Images ◽  
Capacitive Loading

Abstract A contact probing system for surface imaging and real-time signal measurement of deep sub-micron integrated circuits is discussed. The probe fits on a standard probe-station and utilizes a conductive atomic force microscope tip to rapidly measure the surface topography and acquire real-time highfrequency signals from features as small as 0.18 micron. The micromachined probe structure minimizes parasitic coupling and the probe achieves a bandwidth greater than 3 GHz, with a capacitive loading of less than 120 fF. High-resolution images of submicron structures and waveforms acquired from high-speed devices are presented.

scholarly journals Integrated Photonics Based High Speed Arbitrary Waveform Generation

2021 ◽  
Author(s):  
Shivangi Chugh ◽  
Shalabh Gupta
Keyword(s):  
High Speed ◽  
Photonic Integration ◽  
Waveform Generator ◽  
Digital To Analog Converter ◽  
Arbitrary Waveform Generation ◽  
Waveform Generation ◽  
Silicon Photonic ◽  
Bandwidth Limitation ◽  
High Bandwidth ◽  
Arbitrary Waveform

High speed arbitrary waveform generator enabled by photonic digital to analog converter where the bandwidth limitation arising due to interconnect and device parasitics in its electronic counterparts is circumvented. Leveraging the silicon photonic integration technology for this purpose provides a potential high resolution, high bandwidth, and energy efficient solution for signal transmitters.

A NOVEL FPGA-BASED APPROACH FOR DIGITAL WAVEFORM GENERATION USING ORTHOGONAL FUNCTIONS

2007 ◽  
Vol 16 (06) ◽  
pp. 895-909 ◽  
Author(s):  
SYED MANZOOR QASIM ◽  
SHUJA AHMAD ABBASI
Keyword(s):  
High Speed ◽  
Cost Effective ◽  
Digital Design ◽  
Waveform Generator ◽  
Orthogonal Functions ◽  
Orthogonal Function ◽  
Waveform Generation ◽  
Novel Approach ◽  
Field Programmable ◽  
On Chip

This paper presents a novel approach for the generation of periodic waveforms in digital form using Field Programmable Gate Array (FPGA) and orthogonal functions. The orthogonal function consists of a set of Rademacher–Walsh Functions, and utilizing these functions, virtually any periodic waveform can be synthesized. Recent technological advancements in FPGA and availability of sophisticated digital design tools have made it possible to realize high-speed waveform generator in a cost-effective way. We demonstrate the proposed technique for the successful generation of Trapezoidal, Sinusoidal, Triangular waveforms, and a complex version of these waveforms. Simulation results for the various waveforms implemented in Xilinx Spartan-3 (XC3S200-4FT256) FPGA are presented both in analog and digital forms, and validated in MATLAB. The designed circuit can be easily integrated as a module for System-on-Chip (SoC) for on-chip waveform generation

scholarly journals Integrated Photonics Based High Speed Arbitrary Waveform Generation

2021 ◽  
Author(s):  
Shivangi Chugh ◽  
Shalabh Gupta
Keyword(s):  
High Speed ◽  
Photonic Integration ◽  
Waveform Generator ◽  
Digital To Analog Converter ◽  
Arbitrary Waveform Generation ◽  
Waveform Generation ◽  
Silicon Photonic ◽  
Bandwidth Limitation ◽  
High Bandwidth ◽  
Arbitrary Waveform

High speed arbitrary waveform generator enabled by photonic digital to analog converter where the bandwidth limitation arising due to interconnect and device parasitics in its electronic counterparts is circumvented. Leveraging the silicon photonic integration technology for this purpose provides a potential high resolution, high bandwidth, and energy efficient solution for signal transmitters.

Microfabrication research at the National Submicron Facility

1983 ◽  
Vol 41 ◽  
pp. 86-89
Author(s):  
E.D. Wolf
Keyword(s):  
Integrated Circuits ◽  
Particle Physics ◽  
High Speed ◽  
New Technology ◽  
High Energy ◽  
High Energy Particle ◽  
New Science ◽  
Wide Range ◽  
Intermediate Domain ◽  
Circuit Function

Most microelectronics devices and circuits operate faster, consume less power, execute more functions and cost less per circuit function when the feature-sizes internal to the devices and circuits are made smaller. This is part of the stimulus for the Very High-Speed Integrated Circuits (VHSIC) program. There is also a need for smaller, more sensitive sensors in a wide range of disciplines that includes electrochemistry, neurophysiology and ultra-high pressure solid state research. There is often fundamental new science (and sometimes new technology) to be revealed (and used) when a basic parameter such as size is extended to new dimensions, as is evident at the two extremes of smallness and largeness, high energy particle physics and cosmology, respectively. However, there is also a very important intermediate domain of size that spans from the diameter of a small cluster of atoms up to near one micrometer which may also have just as profound effects on society as “big” physics.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Experimental Validation of Conifer and Broad-Leaf Tree Classification Using High Resolution PolSAR Data above X-Band

2019 ◽  
Vol E102.B (7) ◽  
pp. 1345-1350 ◽  
Author(s):  
Yoshio YAMAGUCHI ◽  
Yuto MINETANI ◽  
Maito UMEMURA ◽  
Hiroyoshi YAMADA
Keyword(s):  
High Resolution ◽  
Experimental Validation ◽  
X Band ◽  
Broad Leaf
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