A Floating Gate MOSFET Based Current Reference with Subtraction Technique

2010 ◽  
Author(s):  
V. Suresh Babu ◽  
P.S. Haseena ◽  
M.R. Baiju
Keyword(s):  
Floating Gate ◽  
Subtraction Technique ◽  
Current Reference

A 0.6V Low-power FGMOS Current Reference with Current Subtraction Technique

2015 ◽  
Vol 2 (1) ◽  
pp. 21-28
Author(s):  
G. Sambasiva Rao ◽  
◽  
L. Ashok ◽  
M. Mahesh ◽  
◽  
...  
Keyword(s):  
Low Power ◽  
Subtraction Technique ◽  
Current Reference

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

Floating Gate Memory Based on Ferritin Nanodots with High-kGate Dielectrics

2009 ◽  
Vol 48 (4) ◽  
pp. 04C153 ◽  
Author(s):  
Kosuke Ohara ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Ichiro Yamashita ◽  
Toshitake Yaegashi ◽  
...  
Keyword(s):  
Floating Gate ◽  
Floating Gate Memory

Simulation of proppant transport and fracture plugging in the framework of a radial hydraulic fracturing model

2020 ◽  
Vol 35 (6) ◽  
pp. 325-339
Author(s):  
Vasily N. Lapin ◽  
Denis V. Esipov
Keyword(s):  
Numerical Model ◽  
Hydraulic Fracturing ◽  
Oil And Gas ◽  
Oil And Gas Industry ◽  
Injection Rate ◽  
Fluid Injection ◽  
Subtraction Technique ◽  
Gas Industry ◽  
Proppant Transport ◽  
Hydraulic Fracture Propagation

AbstractHydraulic fracturing technology is widely used in the oil and gas industry. A part of the technology consists in injecting a mixture of proppant and fluid into the fracture. Proppant significantly increases the viscosity of the injected mixture and can cause plugging of the fracture. In this paper we propose a numerical model of hydraulic fracture propagation within the framework of the radial geometry taking into account the proppant transport and possible plugging. The finite difference method and the singularity subtraction technique near the fracture tip are used in the numerical model. Based on the simulation results it was found that depending on the parameters of the rock, fluid, and fluid injection rate, the plugging can be caused by two reasons. A parameter was introduced to separate these two cases. If this parameter is large enough, then the plugging occurs due to reaching the maximum possible concentration of proppant far from the fracture tip. If its value is small, then the plugging is caused by the proppant reaching a narrow part of the fracture near its tip. The numerical experiments give an estimate of the radius of the filled with proppant part of the fracture for various injection rates and leakages into the rock.

scholarly journals Single-Poly Floating-Gate Memory Cell Options for Analog Neural Networks

2021 ◽  
pp. 108062
Author(s):  
Maksym Paliy ◽  
Tommaso Rizzo ◽  
Piero Ruiu ◽  
Sebastiano Strangio ◽  
Giuseppe Iannaccone
Keyword(s):  
Neural Networks ◽  
Memory Cell ◽  
Floating Gate ◽  
Floating Gate Memory ◽  
Analog Neural Networks
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