Structured arrays and master slice arrays are often used to reduce cost, design and test time for radiation hardened analog integrated circuits. One of such master slice arrays is МН2ХА030, which uses bipolar and junction field-effect transistors. The purpose of this article is to estimate the effect of ionizing radiation on the parameters of the operational amplifier OAmp2 and comparators ADComp1 and ADComp3 created on the МН2ХА030 master slice array. Еhe results of measurements of analog components after exposure to 60Co gamma quanta with an absorbed dose of up to 700 krad and a fast electron fluence of up to 2.9·1015 el./cm2 with an energy of 6 MeV are presented. The OAmp2 operational amplifier provides a satisfactory level of basic static parameters (input current, offset voltage, voltage gain) at a fast electron fluence of up to 3.7·1014 el./cm2 with an energy of 6 MeV. There are a decrease in the voltage gain and an increase in the offset voltage at electron fluence of greater than 1015 el./cm2. The latter can be caused by a decrease in the efficiency of the common-mode signal feedback integrated into operational amplifier with a significant drop in current gain of bipolar transistors. All considered analog components provide a satisfactory level of basic static parameters at a fast electron fluence of up to 3.7·1014 el./cm2 with an energy of 6 MeV and an absorbed dose of 60Co gamma quanta of at least 700 krad. It is assumed that resistance of OAmp2, ADComp1, ADComp3 to the action of 60Co gamma quanta is significantly higher and requires further research. The developed analog components can be used in signal reading devices required in front-end of sensors for space instrumentation and nuclear electronics.
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