DC offset voltage reduction in cascaded instrumentation amplifier

2013 ◽  
Author(s):  
G. Shukla ◽  
N. Srivastava ◽  
A. Shadab
Keyword(s):  
Instrumentation Amplifier ◽  
Dc Offset ◽  
Offset Voltage

scholarly journals High-CMRR Low-Noise Fully Integrated Front-End for EEG Acquisition Systems

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1157 ◽  
Author(s):  
Robert Chebli ◽  
Mohamed Ali ◽  
Mohamad Sawan
Keyword(s):  
Low Noise ◽  
Common Mode ◽  
Fully Integrated ◽  
Dc Offset ◽  
Chopper Stabilization ◽  
Logarithmic Amplifier ◽  
Offset Voltage ◽  
High Cmrr ◽  
Programmable Gain ◽  
Stabilization Technique

We present in this paper a fully integrated low-noise high common-mode rejection ratio (CMRR) logarithmic programmable gain amplifier (LPGA) and chopped LPGA circuits for EEG acquisition systems. The proposed LPGA is based on a rail-to-rail true logarithmic amplifier (TLA) stage. The high CMRR achieved in this work is a result of cascading three amplification stages to construct the LPGA in addition to the lower common-mode gain of the proposed logarithmic amplification topology. In addition, the 1 / f noise and the inherent DC offset voltage of the input transistors are reduced using a chopper stabilization technique. The CMOS 180 nm standard technology is used to implement the circuits. Experimental results for the integrated LPGA show a CMRR of 140 dB, a differential gain of 37 dB, an input-referred noise of 0.754 μ Vrms, a 189 μ W power consumption from 1.8 V power supply and occupies an active area of 0.4 mm 2 .

Series Capacitance in High Speed Differential Pairs – A Failure Analysis Case Study

2007 ◽  
Author(s):  
Nicholas Konkol
Keyword(s):  
Personal Computer ◽  
High Speed ◽  
Dielectric Material ◽  
Negative Effects ◽  
Cold Temperatures ◽  
Dc Offset ◽  
Network Connection ◽  
Offset Voltage ◽  
Differential Pair

Abstract Series capacitors, under certain conditions, within high speed differential pair signals were found to have negative effects on mother board functions inside a personal computer (PC). It was noted in one case study that three conditions affected capacitors with this type of application: capacitor aging, DC offset voltage, and cold temperatures. These conditions led to the decrease in capacitance which then disabled the network connection inside the PC. It was concluded that a strategically chosen capacitor type alleviates these conditions. The capacitor type primarily depends on the dielectric material.

Nanoscale Ferroelectric Information Storage Based on Scanning Nonlinear Dielectric Microscopy

2007 ◽  
Vol 7 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Yasuo Cho
Keyword(s):  
Data Storage ◽  
Domain Switching ◽  
Areal Density ◽  
Domain Engineering ◽  
Information Storage ◽  
Switching Speed ◽  
Nonlinear Dielectric ◽  
Dc Offset ◽  
Offset Voltage ◽  
Ultrahigh Density

An investigation of ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) is described. For the purpose of obtaining fundamental knowledge on high-density ferroelectric data storage, several experiments on nanodomain formation in a lithium tantalate (LiTaO3) single crystal were conducted. Through domain engineering, a domain dot array with an areal density of 1.5 Tbit/inch2 was formed on congruent LiTaO3 (CLT). Sub-nanosecond (500 psec) domain switching speed also has been achieved. Next, actual information storage is demonstrated at a density of 1 Tbit/inch2. Finally, it is described that application of a very small dc offset voltage is very effective in accelerating the domain switching speed and in stabilizing the reversed nano-domain dots. Applying this offset application technique, we formed a smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date.

Investigation of the Contact Potential of the Head-Disk Interface Using Kelvin Probe Measurements

2018 ◽  
Author(s):  
Tan D. Trinh ◽  
Frederick E. Spada ◽  
Andrey Ovcharenko ◽  
Frank E. Talke
Keyword(s):  
Acoustic Emission ◽  
Disk Surface ◽  
Head Disk Interface ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Recording Head ◽  
Disk Interface ◽  
Dc Offset ◽  
Offset Voltage ◽  
Probe Measurements

The contact potential across the head-disk interface is investigated. AC voltage was applied to the disk surface using a mercury connector located at the top of the spindle, keeping the recording head grounded. The acoustic emission (AE) and touchdown sensor (TDS) amplitude was measured as a function of the DC offset voltage to determine the contact potential across the head-disk interface at which the AE and TDS signals, respectively, becomes a minimum. The contact potential across the head-disk interface is studied as a function of temperature, relative humidity, and wear of the head-disk interface.

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