Selected-area deposition of diamond films on SiN/Si surfaces with microwave plasma enhanced CVD

ABSTRACTDiamond films have been synthesized by microwave Plasma Enhanced CVD (PECVD) and permanent magnet induced Electron Cyclotron Resonance (ECR) PECVD of hydrogen diluted methane. The films are characterized by SEM images and Raman spectroscopy. The diamond films grown by ECR-PECVD show clear-cut habits of cubic crystal in SEM images, while the film grown by microwave PECVD are the polycrystalline. A Raman line at 1333cm‒1 and broad band located at ∼1500 cm‒1 were obtained for the films grown by both methods. However, the film grown by microwave PECVD shows a larger broad band which is associated with an sp2-bonded graphitic phase

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Low temperature and large area deposition of nanocrystalline diamond films with distributed antenna array microwave-plasma reactor

Diamond and Related Materials ◽

10.1016/j.diamond.2014.05.004 ◽

2014 ◽

Vol 47 ◽

pp. 58-65 ◽

Cited By ~ 24

Author(s):

H.-A. Mehedi ◽

J. Achard ◽

D. Rats ◽

O. Brinza ◽

A. Tallaire ◽

...

Keyword(s):

Low Temperature ◽

Antenna Array ◽

Microwave Plasma ◽

Plasma Reactor ◽

Diamond Films ◽

Nanocrystalline Diamond ◽

Large Area ◽

Nanocrystalline Diamond Films ◽

Distributed Antenna ◽

Area Deposition

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Growth of Highly Transparent Nano-Crystalline Diamond Films by Microwave CVD

MRS Proceedings ◽

10.1557/proc-495-131 ◽

1997 ◽

Vol 495 ◽

Author(s):

D. M. Bhusari ◽

K. H. Chen ◽

J. R. Yang ◽

S. T. Lin ◽

T. Y. Wang ◽

...

Keyword(s):

Grain Size ◽

Microwave Plasma ◽

Diamond Films ◽

Diamond Powder ◽

Structural And Optical Properties ◽

Average Roughness ◽

Plasma Enhanced Cvd ◽

Nano Crystalline ◽

High Smoothness ◽

Quartz Substrates

ABSTRACTWe report here growth of highly transparent nano-crystallinc diamond films on quartz substrates by microwave plasma enhanced CVD. Optical transmittancc of greater than 84% beyond 700 nm has been obtained for films as thick as 1 μm. Such high optical transparency of these films is primarily attributed to the high smoothness of their surface (average roughness of about 60–65 À) as well as the high content of sp3 bonded carbon therein. The effects of methane fraction in the source gas, substrate temperature and grain size of the diamond powder used for substrate pretreatment on the structural and optical properties of these films arc also studied.

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The selective area deposition of diamond films

Journal of Materials Research ◽

10.1557/jmr.1996.0397 ◽

1996 ◽

Vol 11 (12) ◽

pp. 3128-3132 ◽

Cited By ~ 11

Author(s):

P. G. Roberts ◽

D. K. Milne ◽

P. John ◽

M. G. Jubber ◽

J. I. B. Wilson

Keyword(s):

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Polycrystalline Diamond ◽

Silicon Dioxide Layer ◽

Selective Area ◽

Methane Mixture ◽

Dc Bias ◽

Area Deposition

Diamond films were selectively nucleated and grown on single crystal (100) silicon by microwave plasma assisted chemical vapor deposition with submicron spatial resolution. A thermal silicon dioxide layer on the wafers was patterned by standard photolithography. Nucleation was performed by applying a dc bias of −250 to −350 V in a hydrogen-methane plasma. Lifting off the oxide layer by HF etching prior to growth delineated the nucleation pattern which was replicated by the diamond film after growth. The growth of polycrystalline diamond was performed in a hydrogen-carbon monoxide-methane mixture selected to facilitate (100) texturing. Individual faceted crystallites were grown on a square matrix of sites, with a pitch of 3 μm, by controlling the nucleation densities within the windows exposing the prenucleated silicon. However, the orientation of the crystallites was randomly aligned with respect to the (100) silicon lattice within the micron scale windows employed in this study.

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Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽

10.3390/coatings11080888 ◽

2021 ◽

Vol 11 (8) ◽

pp. 888

Author(s):

Pengfei Zhang ◽

Weidong Chen ◽

Longhui Zhang ◽

Shi He ◽

Hongxing Wang ◽

...

Keyword(s):

Methane Concentration ◽

Flat Surface ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Plasma Chemical ◽

High Quality ◽

Effect Analysis ◽

Plasma Chemical Vapor Deposition ◽

Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

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