Cellular Monte Carlo study of RF short-channel effects, effective gate length, and aspect ratio in GaN and InGaAs HEMTs

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

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Quantitative analysis of ultrashallow junction of sub-50 nm gate-length transistors: Junction depth, sheet resistance, short channel effects, and transistor performance

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2132320 ◽

2006 ◽

Vol 24 (1) ◽

pp. 503 ◽

Cited By ~ 2

Author(s):

G. H. Buh ◽

T. Park ◽

G. H. Yon ◽

S. J. Hong ◽

C. W. Ryoo ◽

...

Keyword(s):

Quantitative Analysis ◽

Sheet Resistance ◽

Gate Length ◽

Short Channel Effects ◽

Junction Depth ◽

Short Channel ◽

Channel Effects ◽

Ultrashallow Junction

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50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors – Characterization and Inspection of Operation.

MRS Proceedings ◽

10.1557/opl.2011.455 ◽

2011 ◽

Vol 1282 ◽

Author(s):

David A. J. Moran ◽

Donald A. MacLaren ◽

Samuele Porro ◽

Richard Hill ◽

Helen McLelland ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Gate Length ◽

Short Channel Effects ◽

Short Channel ◽

Transmission Electron ◽

Channel Effects ◽

Physical And Chemical ◽

Electron Energy Loss

ABSTRACTHydrogen terminated diamond field effect transistors (FET) of 50nm gate length have been fabricated, their DC operation characterised and their physical and chemical structure inspected by Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS). DC characterisation of devices demonstrated pinch-off of the source-drain current can be maintained by the 50nm gate under low bias conditions. At larger bias, off-state output conductance increases, demonstrating most likely the onset of short-channel effects at this reduced gate length.

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Effect of Oxide Thickness on GaN-based Double Gate MOSFETs

AIUB Journal of Science and Engineering (AJSE) ◽

10.53799/ajse.v16i2.72 ◽

2020 ◽

Vol 16 (2) ◽

Author(s):

Safayet Ahmed ◽

Md. Tanvir Hasan

Keyword(s):

Oxide Thickness ◽

Device Performance ◽

Gate Length ◽

Double Gate ◽

Short Channel Effects ◽

Subthreshold Slope ◽

Short Channel ◽

Power Switching ◽

Switching Device ◽

Channel Effects

The effect of oxide thickness (EOT) on GaN-based double gate (DG) MOSFETs have been explored for low power switching device. The gate length (LG) of 8 nm with 4 nm underlap is considered. The device is turned off and on for gate voltage (VGS) of 0 V and 1 V, respectively. The effective oxide thickness (EOT) is varied from 1 nm to 0.5 nm and the device performance is evaluated. For EOT = 0.5 nm, the OFF-state current (IOFF), subthreshold slope (SS) and drain induced barrier lowering (DIBL) are obtained 2.97×10-8 A/μm, 69.67 mV/dec and 21.753 mV/V, respectively. These results indicate that, it is possible to minimize short channel effects (SCEs) by using smaller value of EOT.

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